化学机械研磨

APC技术在化学机械研磨工艺中的应用

Application of APC Technique in CMP Craft

铜在化学机械研磨面临的铜腐蚀问题使得产品良率和可靠性都受到威胁。

The corrosion of Cu CMP will impact product yield and reliability .

另一方面，甚大规模集成电路和片上系统规模的发展使得金属密度问题变得更为复杂，传统的解决方法是插入冗余金属以改善化学机械研磨CMP后的芯片平坦度。

In addition , the development of VLSI and SoCs makes metal density problems more complicated . Traditional solution to metal density is to insert dummy fill , to improve the wafer topography after CMP process .

半导体制程技术包括氧化、扩散、热处理、合金化、再流动制程、铜制程及化学机械研磨制程简介。

Introduction to semiconductor manufacturing technology including oxidation , diffusion , alloying , re-flow process , copper process and chemical-mechanical polishing .

最后，根据该技术的研磨机理和现有的实验条件开展了超声振动辅助化学机械研磨硅片的实验研究分析。

Finally , according to the grinding mechanism and the existing experimental conditions , to carry out experimental research of ultrasonic vibration assisted chemical-mechanical grinding silicon wafer .

为此，开展了超声振动辅助化学机械复合研磨硅片技术的基础研究。

So the research subject of ultrasonic vibration chemical-mechanical hybrid grinding new technique is proposed .

分析了W-CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。

The mechanism of W-CMP was analyzed , the slurry makes a dual function of chemical erosion and mechanical lapping , has an important influence on the polishing rate .