二次离子质谱

SiC中V含量的二次离子质谱分析研究

Studies of Vanadium in SiC by SIMS

二次离子质谱对薄膜深度分析的结果表明，F在薄膜中的分布是不均匀的。

Depth profile of the SiOF thin film from secondary ion mass spectroscopy showed the uneven distribution of F in the film .

利用霍耳测试仪、X射线双晶衍射仪、二次离子质谱仪，对隧道结的重掺杂和互扩散特性进行了研究。

The characteristic of heavy doping level of tunnel junction and diffusion each other is investigated by means of Hall technique , X ray diffraction technique and SIMS .

离子注入样品的二次离子质谱（SIMS）定量分析

Quantitative Study of Ion Implanted Sample by SIMS

二次离子质谱的几种定标和定量分析方法&Ga（1-x）AlxAs的SIMS定量分析

Several approaches of calibration and quantitative by sims & quantitative analysis of ga_ ( 1-x ) al_xas

利用二次离子质谱仪检测了铝箔表面区Fe、Si、Cu、Mg、Mn、Zn等微量元素的分布。

The distribution of trace elements as Fe , Si , Cu , Mg , Mn and Zn in the surface layer was also determined by secondary ion mass spectrometer .

采用了二次离子质谱仪（SIMS）和俄歇电子谱仪（AES）进行表面分析。

The experiments were performed by means of Secondary Ion Mass Spectroscopy ( SIMS ) and Auger Electron Spectroscopy ( AES ) .

二次离子质谱（SIMS）和红外光谱（IR）分析结果证实：TiC和SiO2膜在300℃以上的氢中退火可形成抗氚渗透阻挡层。

The SIMS and IR analysis results show that the tritium permeation barrier is formed when TiC and SiO 2 films are annealed in hydrogen above 300 ℃ .

动态型二次离子质谱仪（SIMS）是进行微粒同位素分析最适用的测量仪器之一。

The Secondary Ion Mass Spectrometer ( SIMS ), especially dynamic SIMS , is the most suitable instrument for particle isotopic analysis .

二次离子质谱（SIMS）的重要功能之一是分析固体样品表面成份的深度分布。

One of the basic functions of Secondary Ion Mass Spectrometry ( SIMS ) is the depth profile analyses in solid samples .

用二次离子质谱（SIMS）技术测定了不同磷压下生长的MOVPEn-GaP中的Ni杂质相对浓度。

The relative concentrations of impurity Ni in MOVPE n-GaP grown under different pressures of PH_3are measured with SIMS technique .

杂质Ga及载流子浓度在Si02-Si界面附近的动态分布分别采用二次离子质谱仪（SIMS）和扩展电阻（SRP）进行测量。

Impurity Ga and the carrier concentration distribution are measured by SIMS and spreading resistance profile ( SRP ) spectroscopy individually .

本文通过用扫描俄歇微探针（SAM）和二次离子质谱（SIMS）分析了高能氯离子注入Cu／Si系统，对Cu薄膜附着力增强效应进行了研究。

The enhanced adhesion of Cu films on Si substrates under MeV Cl ion beam irradiation was studied through analysis of Scanning Auger Microprobe ( SAM ) and Secondary Ion Mass Spectroscopy ( SIMS ) .

运用二次离子质谱仪测量了样品中Mn的深度分布，发现退火温度对样品中Mn的分布有很大影响。

The distributions of Mn in annealed samples were measured by Secondary Ion Mass Spectrometry ( SIMS ), it is showed that the temperature of annealing has great affection on the distribution of Mn in sample .

以离子背散射和二次离子质谱分析了大剂量N~+离子注入A1形成的A1/A1N/A1多层结构。

The Al / A1N / Al multilayer structure formed by implantation of largo do se N ~ + ions into aluminum were analyzed by RBS and SIMS measurement .

强烈的基体效应一直是造成二次离子质谱（SIMS）难以定量分析和解释的主要原因。

The severe matrix effect is always the main cause of the difficulty in the quantification and interpretation of secondary ion mass spectrometry ( SIMS ) analysis .

报道了用二次离子质谱分析（SIMS）方法对As在碲镉汞分子束外延中的掺入行为的研究结果。

Behaviors of As incorporation into HgCdTe in molecular beam epitaxy were studied and reported by using a SIMS ( Secondary Ion Mass Spectrometry ) quantitative analysis .

用二次离子质谱（SIMS）和X射线衍射（XRD）对清华大学材料系电子封装用的AlN陶瓷进行了研究。

In this article , the electronic packaging ceramic AlN samples from Department of Materials , Tsinghua university , have been studied using secondary ion mass spectrometry ( SIMS ) and X-ray diffraction ( XRD ) .

通过对不同退火条件下的I-V特性曲线、X射线衍射及二次离子质谱分析，揭示了界面固相反应对该接触的影响，并提出了一种新的二次退火的方法。

By analyzing the I-V curves , the XRD and SIMS spectra at different annealing conditions , effects of interface solid state reactions on contacts were revealed , and a new method named secondary annealing was proposed .

氮离子注入Co-WC硬质合金试样二次离子质谱分析

Surface sims-analysis of carbide alloy Co-WC samples treated with nitrogen ion implantation

使用时间飞行二次离子质谱仪（TOF-SIMS）、X射线光电子能谱仪（XPS）、原子力显微镜（AFM）和接触角测量仪对FTE自组装膜进行了表征。

A time-of-flight secondary ion mass spectrometer ( TOF-SIMS ), X-ray photoelectron spectroscopy ( XPS ), an atomic force microscopy ( AFM ), and contact angle measurements were used to characterize the monolayer .

利用二次离子质谱分析（SIMS）、扩展电阻（SRP）、四探针测试等方法，对P型杂质Ga在SiO2薄膜、SiO2-Si两固相接触的内界面、近Si表面的热分布进行分析；

By characterizing means of SIMS , SRP and four-point probe meter , the thermal distribution of P-type dopant Ga in SiO2 films , at the internal surface of SiO2-Si and near Si surface is analyzed respectively .

飞行时间二次离子质谱（TOF-SIMS）是一种非常灵敏的表面检测技术。

Time-of-Flight secondary ion mass spectrometry ( TOF-SIMS ) is a very sensitive surface analytical technique , well established for many industrial and research applications .

飞行时间二次离子质谱（TOF-SIMS）结合化学衍生法分析杂环新化合物的结构

Characterization of Heterocyclic New Compounds ' Structure Using Time - of - Flight Secondary Ion Mass Spectrometry ( TOF - SIMS ) Combined with Chemical Derivation

用光荧光谱和二次离子质谱的方法，研究了由Si3N4电介质薄膜引起的无杂质空位诱导InGaAs/InP多量子阱结构的带隙蓝移。

Blue shift of band gap for InGaAs / InP MQW structures caused by impurity-free vacancy disordering was investigated using photoluminescence ( PL ) and secondary ion mass spectrum ( SIMS ) .

应用LAS－2000二次离子质谱表面分析系统作了如下测量：（1）测出HL－1装置的总出气量以及其主要出气组分的出气量百分比和出气峰值温度等参数；

The main experimental fruits obtained with a LAS-2000 SIMS system are the following : ( 1 ) As the first wall sample being heated , the total outgassing amount , the component percentage and the temperature refer to the outgassing peak were measured .

本文结合第9届国际二次离子质谱学会议（SIMS－IX）对SIMS的最新进展作一个简要评述，范围包括SIMS的各个方面：基础研究、仪器发展、定量分析、应用以及后电离技术等。

Based on the gth International Conference on SIMS held in November 1993 , some latest developments on SIMS are reviewed in this paper . The scope covers all aspects of SIMS : fundamentals , instrumentation , quantification , applications and related techniques .

应用时间飞行二次离子质谱仪（TOF-SIMS）、原子力显微镜（AFM）和接触角测量仪对FTE自组装膜进行表征。通过Olympus磁头磁盘界面可靠性测试系统对FTE自组装膜的摩擦学性能进行研究。

The FTE SAMs was characterized by the time-of-flight secondary ion mass spectrometer ( TOF-SIMS ), atomic force microscopy ( AFM ) and contact angle measurement , and the tribology properties of the FTE SAMs were measured by the Olympus head / disk interface reliability measurement system .

多晶硅/氧化硅界面的二次离子质谱分析

Investigation of the poly-Si / SiO2interface using secondary ion mass spectroscopy

静态二次离子质谱在聚合物表面研究中的应用

The applications of static secondary ion mass spectrometry on polymer surface