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inp

  • 网络输入;磷化铟;脉冲噪声保护;铟磷;理工学院
inpinp
  1. The Hall effect and conductivity of Be-doped p-type InP have been measured in the temperature range from 77-350 K.

    在77&350K温度范围内测量了掺Be的p型磷化铟的霍尔效应和电导率。

  2. The role of the wave surface , design based on a typical optical element light InP device having a converging , diverging , and other functions .

    基于典型光学元件对波面的作用,设计了对光具有会聚、发散等功能的磷化铟器件。

  3. Radiation Effect Study of InP Materials by High Energy Heavy Ions

    半导体InP的高能重离子辐照效应研究

  4. Present Status and Developing Trends of InP Crystal Growth Technology

    磷化铟晶体生长技术的现状及其发展趋势

  5. The development and key technology of large diameter InP crystal growth are discussed .

    还讨论了大直径InP单晶生长技术的发展和关键因素。

  6. A study of lattice damage model of ion implantation in InP

    离子注入InP晶格损伤模型的研究

  7. Study On The Teaching Mode Of College English Listening And Speaking Base On INP

    以INP为基础的大学英语听说教学模式研究

  8. Electron irradiation induced defects in high temperature annealed InP single crystal

    高温退火后非掺杂磷化铟材料的电子辐照缺陷

  9. A Calculation of the Electronic Band of InP ( 110 ) Surface

    InP(110)表面电子能带计算

  10. Electron stimulated adsorption study of oxygen on InP clean surface

    InP清洁表面上电子感应吸附氧的研究

  11. Mass Spectrographic Analysis of InP Material and its Hall Coefficient Measure

    InP材料的质谱分析及霍耳系数测量

  12. This paper presents a study on the physical characteristics of InP microwave photoelectric device .

    本文对InP微波光电器件的物理特性进行了研究。

  13. The Experimental Study of the Superconducting Magnet Apparatus for InP Crystal Growth

    磷化铟单晶炉用超导磁体装置的调试及实验

  14. It is attempt and discussion for calculating Φ value inP ⅲ .

    是对P-Ⅲ中Φ值求解的有益的尝试和探讨。

  15. Positron Annihilation Study of InP Irradiated by High Energy Heavy Ion

    用正电子湮没方法研究高能重离子辐照半导体InP

  16. Surface and interface study of anodic oxide on InP by AES

    阳极氧化InP表面和界面的AES研究

  17. Development and Status of InP Single Crystal

    InP单晶材料现状与展望

  18. Influence of deep level defects on electrical compensation in semi-insulating InP materials

    深能级缺陷对半绝缘InP材料电学补偿的影响

  19. Transient Dynamics of Excited States and Nonlinear Optical Properties of InP Nanoparticles

    InP纳米颗粒的超快动力学和光学非线性

  20. Numerical Simulation and Analysis of Spectral Responses of InP N + / P Solar Cell

    InPN+/P太阳电池光谱响应的数值模拟和分析

  21. Doping of Zn into InP Induced by YAG Continuous Wave Laser

    Nd:YAG连续激光诱导下InP的Zn掺杂

  22. The study of Φ 100mm sulfur doped InP single crystal growth

    Φ100mm掺硫InP单晶生长研究

  23. Low Temperature InP / GaAs Wafer Bonding Based on a Sulfide Treated Surface

    基于硫化物表面处理的InP/GaAs低温晶片键合

  24. Plasma growth of InP surface medium film

    磷化铟表面介质膜的等离子体生长

  25. Generation and suppression of deep level defects in InP

    InP中深能级缺陷的产生与抑制现象

  26. A new method for low-temperature direct wafer bonding of InP / GaAs

    InP/GaAs低温键合的新方法

  27. Investigation of UV Laser Direct Etching on InP Material

    InP材料UV激光直接刻蚀研究

  28. The Study of Porous InP Formed by Electrochemical Etching ;

    对易获得重现性好的化学蚀刻法进行了探研。

  29. Study on Gas Sensitivity of Pt / InP Schottky Barrier Diode

    Pt/InP肖特基二极管气敏特性的研究

  30. Comparative study of two kinds of InGaAs / InP PIN photodetectors

    两种InGaAs/InPPIN光探测器比较研究