霍尔效应

在77&350K温度范围内测量了掺Be的p型磷化铟的霍尔效应和电导率。

The Hall effect and conductivity of Be-doped p-type InP have been measured in the temperature range from 77-350 K.

其内容包括MBJ1边坡无线监测仪及MW1霍尔效应双向数字式位移传感器两部分。

Ft consists of two parts ; MBJ-1 wireless slope monitor and MW-1 Hall Effect Duplex Digital Displacement Transducer .

N型锑化铟的电导率，霍尔效应和横向磁阻效应

Conductivity Hall effect and transverse magnetoresistance effect of N type indium antimonide

采用X射线衍射、Raman散射及霍尔效应技术研究了薄膜的晶体微结构及电学特性。

The structural and electrical properties of Al-doped ZnO films were characterized by X-ray diffraction , Raman scattering and Hall investigations .

Cu3N薄膜的制备及其霍尔效应研究

Investigations on Preparation and the Hall Effect of the Cu_ ( 3 ) N Thin Films

硒化镉（CdSe）单晶体的变温霍尔效应研究

Studies of the Hall effects at different temperatures on CdSe single crystals

ECM以位于前方滑轮后边的霍尔效应传感器为参考。

The ECM takes its reference from a Hall effect sensor that is located to the rear of the front pulley .

利用X射线衍射、霍尔效应、UV-VIS-NIR分光光度计等测试手段对薄膜样品进行表征，研究了不同热处理气氛及温度对ITO薄膜光电特性的影响。

The annealing effects on electrical and optical properties of ITO films under different atmospheres were studied using X-ray diffraction ( XRD ), Hall Effect and UV-VIS-NIR spectrometer .

过量镁掺杂的p-GaN的变温霍尔效应研究

Temperature-Dependent Hall Measurement for Heavily Mg-doped p-GaN

利用X射线衍射技术、荧光光谱、霍尔效应和光学显微等方法分别研究了ZnO单晶的晶格完整性、深能级缺陷、电学性质、位错和生长极性。

Lattice perfection , deep level defects , electrical properties , dislocations , and the growth polarity of bulk ZnO single crystal are characterized with X-ray diffraction , photoluminescence , the Hall effect , and optical microscopy .

在实验基础上结合相关理论，认为外加磁场通过霍尔效应影响滤纸上Zn分枝状电解沉积物形貌。

On the basis of these experimental results and the related theories , it was proposed that the magnetic field influenced the morphologies of the branched Zn electrodeposits grown on filter paper through the Hall effect .

用Visual-Basic建立的霍尔效应实验仪监测模块

Hall Effect Test Apparatus Monitoring Module Established with Visual-Basic

利用霍尔效应、电流电压（IV）、光致发光谱（PL）和光电流谱（PC）研究了不同掺铁浓度的半绝缘InP的性质。

Properties of Fe-doped semi-insulating ( SI ) InP with different iron concentrations are studied by using Hall effect , current-voltage ( I-V ), photoluminescence spectroscopy ( PL ) and photocurrent spectroscopy ( PC ) measurements .

居里温度TC以下存在侧跃导致的反常霍尔效应，并且7K附近的相变导致霍尔电阻率发生异常。

Furthermore , extraordinary Hall effect exists for side jump at temperatures below T C and the phase transition leads to Hall resistivity changing abnormally at 7K .

对分子束外延（MBE）法在BaF2衬底上生长的N型Pb（0.88）Sn（0.12）Te/PbTe多量子阱材料进行了变温（16～300K）弱场霍尔效应测量。

N-type Pb_ ( 0.88 ) Sn_ ( 0.12 ) Te / PbTe multi-quantum well structures on BaF_2 substrate have been prepared by MBE technique . Weak field Hall coefficients are measured from 16K to 300K .

接着对模糊球、两种量子霍尔效应以及非对易Chern-Simons理论的基本概念作了简单的描述。

Then we formulates simple basic definition of fuzzy sphere , two kinds of quantum Hall effect and noncommutative Chern-Simons theory .

Fe-Si-O颗粒膜的霍尔效应研究

Study on Hall Effect of Fe-Si-O Granular Films

A132X系列线性霍尔效应传感器已经优化，具有灵敏、温度稳定等特点。

The A132X family of linear Hall-effect sensors are optimized , sensitive , and temperature-stable .

并且在Cux（SiO2）1-x这一非磁性金属系统中，发现了巨霍尔效应（GHE），其数值高于普通金属近3个数量级，为霍尔传感器材料研究提供了新途径。

And we find Giant Hall Effect ( GHE ) which is 3 orders larger than that of ordinary metal in this non magnetic system . This provides a new in studying of material for Hall sensor .

吸收谱测试表明TGO薄膜在可见光范围内透过率可达到85%以上，其光学禁带宽度Eg约3.8eV。霍尔效应测试结果表明，TGO薄膜的载流子类型及其浓度与热处理温度密切相关。

UV-Visible absorption results show that the optical band-gap of the TGO films is 3.8 eV approximately , and the transmittance of the films is higher than 85 % in the visible region .

通过对薄膜的霍尔效应，Seebeck效应的测量，我们得到了薄膜的电学参数。通过对CIO薄膜的光谱进行研究，我们得到了薄膜在紫外、可见和红外区域的光学特性。

By the measurement of Hall and Seebeck effects , the electrical parameters can be obtained , and the optical properties in ultraviolet , visible and infrared wave-band can be obtained by analyzing the optical spectrums of CIO films .

在A1210-A1214霍尔效应锁存包括一个单一的硅芯片上以下内容：稳压器，霍尔电压发生器，小信号放大器，施密特触发器和NMOS输出晶体管。

The A1210-A1214 Hall-effect latches include the following on a single silicon chip : voltage regulator , Hall-voltage generator , small-signal amplifier , Schmitt trigger , and NMOS output transistor .

在利用HL-5霍尔效应测试仪测量磁场的实验中，发现有些仪器的测量曲线在磁极边缘附近存在畸变。

Magnetic field curve distortion is found at the position of magnetic pole edge in Hall effect experiment , using HL-5 Hall effect testing instrument .

本文简要地综述了超晶格半导体材料GaAs-AlxGa（1-x）As的物理特性及其在激光和大规模集成电路中的应用，评述了整数量子霍尔效应的主要理论。

The physical characteristics of superlattice semiconductor GaAs-Al_xGa_ ( 1-x ) As and its applications to the fields of laser and VLSI as well as the main theory of the ordinary quantum Hall effect are briefly reviewed .

在第二章，我们较为详细地介绍了MgB2超导体正常态和超导态的基本性质，其中包括同位素效应、霍尔效应、压强效应、掺杂效应等。

In chapter 2 , we present the properties of the system in both the superconducting state and normal state , such as the isotope effect , the hall effect , the pressure effect and the doping effect .

变温霍尔效应测试系统是大学物理、材料、电子学科的重要实验仪器和研究设备，而Visual-Basic语言提供了串行通信控件。

Hall effect test system is an important laboratory apparatus and research equipment of the subjects such as College Physics , Material and Electronic Science while Visual-Basic provides serial communication controlling unit .

检测自旋极化的方法有很多，比如光磁圆二色性、反常霍尔效应、安德鲁反射等，但是从器件应用的角度来说用隧穿磁电阻（TMR）的方法去检测带电载流子的自旋极化更有意义。

There are various methods to probe the spin polarization , such as optical magnetic circular dichroism , anomalous Hall effect , and Andreev reflection spectroscopy . However , from the point of direct application in devices , tunneling magnetoresistance ( TMR ) is more practical .

运用霍尔效应的原理，在低真空、高温（390～540K）下用直流法测量了该α-Fe2O3压片的霍尔电压与电阻。

The Hall voltage and resistivity of a α - Fe 2O 3 sample in low vacuum were measured at high temperatures ( 390 ~ 540K ) .

利用摩托罗拉公司新推出的霍尔效应式专用点火集成电路MC33093，通过调整一些参数，设计出适合我国汽车用霍尔效应式电子点火电路。

Hall effect electronic is now designed , using Hall effect special purpose ignition integrated circuit MC33093 newly developed by MOTOROLA Company with some of the parameters adjusted .

本文论述了一种新型电量变送器WDB-1型微机变送器的工作原理及软件算法和硬件结构，该电量变送器突破了传统的时间分割式和霍尔效应式的处理方法，而采用了直接交流采样的处理方法。

This paper describes the working principle of a new - kind of electric transducer , WDB-1 micro-computer watthour transducer , its software as well as its hardware . A direct alternating sample disposing method is used in this transducer instead of the traditional time-cut and hall effect method .