铁电场效应晶体管

同时，该模型也便于从理论上直接研究铁电场效应晶体管的保持性能。

Moreover , this model facilitates the direct theoretic study on the retention characteristics of FeFET . 2 .

但是，由于铁电场效应晶体管的保持性能较差，目前仍没有得到实用化。

However , FeFET has not been put into practical use until now because of its poor retention characteristics .

Pb（Zr，Ti）O3铁电场效应晶体管的制备及性能研究

Fabrication and Characteristics of Pb ( Zr , Ti ) O_3Ferroelectric Field-Effect Transistor

Ag/Bi4Ti3O（12）栅n沟道铁电场效应晶体管制备及存储特性

Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag / Bi_4Ti_3O_ ( 12 ) / p-Si gate

Bi4Ti3O（12）栅Si基铁电场效应晶体管特性研究

Studies on Characteristics of Ferroelectric Field Effect Transistor with Bi_4Ti_3O_ ( 12 ) Gate on Si Substrates

得到了一个铁电场效应晶体管（MFIS结构）的新的模型，并对该模型进行了电特性分析。

A new method of modeling and the electrical characters MFIS is offered here .

在溶胶-凝胶工艺获得高质量Bi4Ti3O12薄膜的基础上，制备了Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管。

Metal-ferroelectric-semiconductor field-effect-transistors ( FFETs ) with Ag / Bi_4Ti_3O_ 12 / p-Si gate were fabricated using the high quality Bi_4Ti_3O_ 12 on p-Si substrates prepared by Sol-Gel technique .

研究并比较了铁电场效应晶体管（FeFET）结构的输出特性和转移特性。

The output and transfer characteristics of the ferroelectric field effect transistor ( FeFET ) were studied .

偏氟乙烯与三氟乙烯共聚物P（VDF-TrFE）是具有优异铁电特性的功能材料，已被广泛应用于传感器、有机非挥发性存储、铁电场效应晶体管等器件中。

P ( VDF-TrFE ) has been already used in a broad range of technological applications ( sensors , organic non-volatile storage , ferroelectric field effect transistor et al ) asfunctional material because it exhibits excellent ferroelectric properties .

由具有金属-铁电-绝缘层-半导体（MFIS）结构的铁电场效应晶体管（FeFET）组成的铁电存储器以其非破坏性读出、存储密度高等优点引起国内外研究者的关注。

The ferroelectric field effect transistor ( FeFET ) with metal-ferroelectric - insulator-semiconductor ( MFIS ) structure has drawn much attention because of its advantage such as nondestructive readout and high storage density .

铁电场效应晶体管铁电液晶显示器述评

The ferroelectric field effect transistor Ferroelectric Liquid Crystal Displays

铁电场效应晶体管铁电存储器技术

The ferroelectric field effect transistor FRAM Technique

Pt/PZT/Pt结构铁电场效应晶体管性能研究

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt / PZT / Pt Structure

基于建立的保持性能模型，模拟和分析了铁电场效应晶体管各电学参数和材料参数对其保持性能的影响。

Effects of the electrical and material parameters on the retention characteristics of FeFET are simulated and discussed based on the developed retention model .

在实际应用方面，它为新型磁电和磁光器件，如非失忆性存储器，门铁电场效应晶体管、磁电阻等方面提供了广阔的潜在应用前景。

A number of device applications have been suggested for magnetic ferroelectrics , including non-volatile memory materials , gate ferroelectrics in field-effect-transistors and magnetoresistance .

铁电薄膜，由于具有良好的力电耦合性能，在过去二十年里广泛应用于高压电容器、传感器和铁电场效应晶体管等。

Due to the large coupling between the electrical and mechanical properties , ferroelectric thin films are used in applications ranging from high-value capacitors and sensors to ferroelectric field-effect transistors .

该模型能够同时在短时间和长时间尺度描述铁电场效应晶体管的保持性能，为实验上对长时间尺度保持性能的预测提供了一种方法。

This model can give the retention characteristics of FeFET both in short and long time scales , so it provides a way to predict the retention characteristics in long time scale experimentally .

铁电场效应晶体管作为铁电存储器的一种，除了上述优点之外，还具有单元结构简单、存储密度更高和符合超大规模集成电路的按比例缩小定律等更多优点，引起了研究者的广泛关注。

As one of ferroelectric memories , ferroelectric field-effect transistor ( FeFET ) has attracted considerable interests due to its simple unit structure , higher storage density , and obeying the scaling rule of ultralarge-scale-integration circuits .