磁控溅射技术

Al叉指状电极是由平面磁控溅射技术沉积得到的。

The Al film-electrodes were deposited by planar magnetron sputtering .

RF磁控溅射技术制备TiO（2-x）Nx薄膜及组成和结构研究

Compositional and structural properties of TiO_ ( 2-x ) N_x thin films deposited by RF magnetron sputtering

用RF同轴磁控溅射技术制作c轴择优取向ZnO薄膜

ZnO Films with Preferential c-axis Orientation Prepared by RF Cylindrical Magnetron Sputtering

应用圆柱形磁控溅射技术制备X射线反射膜

Development of Preparing Technique of X-ray Reflective Film for Hyperbolic and Paraboloid Mirrors by Columnar Target in Magnetical Sputter System

本文采用磁控溅射技术制备了Ti薄膜，研究制备过程中工艺参数：溅射压强、功率、时间对薄膜结构及形貌的影响。

The influence of sputtering pressure , sputtering power , and sputtering time on the films structure and morphology was studied .

结果表明：选用适当的工艺参数，采用中频非平衡磁控溅射技术可以比较稳定的制备TiN膜。

The results show that the TiN film may be steadily prepared by middle frequency unbalance magnetron sputtering under proper technical parameter .

采用反应磁控溅射技术制备了一系列具有不同调制周期的VN/（Ti，Al）N纳米多层膜。

A series of VN / ( Ti , Al ) N nano-multilayers with various modulation periods were prepared ( using ) reactive magnetron sputtering method .

采用中频孪生非平衡磁控溅射技术制备钛掺杂WO3薄膜。

Ti-doped WO_3 films were prepared by mid-frequency dual-target magnetron sputtering method .

微波-ECR等离子体增强非平衡磁控溅射技术及CN薄膜的制备研究磁控管总体设计的探讨

MW-ECR Plasma Enhanced Unbalance Magnetron Sputtering and Carbon Nitride Films Preparation Study of the Magnetron Design

用磁控溅射技术制备薄膜，用X射线衍射研究在基片和靶间距离固定的情况下不同的溅射功率对薄膜结构的影响。

The thin films were fabricated by varying the magnetron sputtering power in order to investigate the influence of the sputtering power on the structure of thin films .

利用硅-SiO2复合靶，RF磁控溅射技术制备了三种富硅量不同的SiO2薄膜，并在较大的温度范围内进行了退火。

Si-rich SiO 2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si-SiO 2 composite targets .

本文采用反应磁控溅射技术并选择石墨靶材作为镀层生长中所需的碳源，制备了一系列碳含量不同的Ti（C，N）镀层。

In this paper , Ti ( C , N ) films with different carbon content have been prepared by reaction magnetron sputtering technology and using graphite target as the C supplier .

本文采用射频反应磁控溅射技术在柔性PET衬底上成功地制备了掺杂Al的ZnO薄膜（ZnO：Al/AZO薄膜）。

In this article , we have successfully prepared Al-doped ZnO films ( ZnO : Al / AZO film ) on flexible PET substrate by RF reactive magnetron sputtering .

采用磁控溅射技术，在Si（100）衬底上制备了一系列不同周期、不同Ge层厚度的Ge/Si多层膜样品。

The series of Ge / Si multilayer films have been prepared by magnetron sputtering on c-Si ( 100 ) substrates at different periods and Ge thickness .

在不同的Ar和O2气流量比下，利用射频磁控溅射技术在载波片上制备了TiO2薄膜。

TiO2 thin films were prepared on microscope glass slides by radiofrequency magnetron sputtering method under different flow ratios of Ar and O2 gases .

基于磁控溅射技术的ZAO透明导电薄膜及靶材的研究

Research and development of aluminum doped ZnO transparent conductive oxide films and target by magnetron-sputtering

结论射频磁控溅射技术制备的HA生物涂层，表面形貌良好，涂层与基体的界面结合强度较高。

Conclusion HA bioactive coating obtained by radio frequency magnetron sputtering was uniform and dense . Its surface had a textured appearance and the bonding strength was high .

使用中频脉冲磁控溅射技术分别在Si（111）、玻璃以及高速钢基底上沉积AlN薄膜。

AlN thin films have been successfully prepared on Si ( 111 ), glass and high-speed steel ( HSS ) substrates by middle frequency magnetron sputtering .

以高纯ZnO为靶材，氩气为溅射气体，利用射频磁控溅射技术在石英衬底上生长出纤锌矿结构的富锌ZnO薄膜。

A Zn-rich ZnO film with wurtzite structure is deposited on quartz substrate by radio-frequency magnetron sputtering technique using high pure ZnO as target and Ar as sputtering gas .

采用磁控溅射技术先在硅衬底上制备Ga2O3/Ti薄膜，然后在950℃时于流动的氨气中进行氨化反应制备GaN薄膜。

GaN thin films were successfully prepared on the Si ( 111 ) substrates through ammoniating Ga2O3 / Ti thin films deposited by magnetron sputtering .

为了提高TiO2薄膜的光催化效率，利用中频交流磁控溅射技术，采用Ti和Ag金属靶制备了Ag/TiO2复合薄膜。

Ag / TiO2 composite films were successfully prepared using a mid-frequency AC magnetron sputtering technique with pure Ti and Ag targets to increase photocatalytic efficiencies of TiO2 films .

采用磁控溅射技术在有机衬底上低温制备出具有低电阻率和良好附着性的ZnO∶SnO透明导电膜。

Transparent conducting ZnO ∶ SnO films with low resistivity and good adhesion were deposited on flexible substrates by magnetron sputtering at room temperature .

使用直流磁控溅射技术，在彩色膜衬底上室温制备出粘附性良好的氧化铟锡（ITO）透明导电薄膜。

Direct deposition of indium-tin oxide ( ITO ) thin film on color filter is of practical use in the construction of advanced flat-panel display .

以GeSiO2和SiSiO2复合靶作为溅射靶，分别采用射频磁控溅射技术和双离子束溅射技术制得了GeSiO2和SiSiO2薄膜。

The composite films of Ge-SiO 2 and Si-SiO 2 were prepared by using the radio frequency ( RF ) magnetron sputtering and dual ion beam co-sputtering , respectively .

射频磁控溅射技术制备IT-SOFCGDC电解质膜的研究

Fabrication of GDC Electrolyte Film for IT-SOFC by RF-Magnetron Sputtering

本文利用直流磁控溅射技术研究了应用于硅基薄膜太阳能电池前电极上的掺铝氧化锌（AZO）透明导电薄膜的制备和性能表征。

AZO thin films were grown by DC magnetron sputtering and characterized for its applications in Si-based thin film solar cells as the front electrode .

阐述用磁控溅射技术制备综合性能优良的ZAO透明导电薄膜及其靶材的发展现状和趋势。

Development and trend of transparent conductive thin films and target whose general property is perfect by magnetron-sputtering are summarized .

通过研究得出的主要结果如下：1、采用射频磁控溅射技术在普通玻璃上生长AZO透明导电薄膜。

The main results obtained through the study are as follows : 1 、 AZO thin films were prepared on glass substrates by RF magnetron sputtering .

目前国内外制备InN薄膜的主流工艺有MOCVD、MBE、HVPE、磁控溅射技术。

At home and abroad the mainstream film preparation of InN has MOCVD , MBE , HVPE , magnetron sputtering technique .

研究结果表明：反应直流磁控溅射技术和渠道火花烧蚀技术制备的IMO透明导电薄膜均为多晶的方铁锰矿结构；他们的结晶性均比反应热蒸发的结晶性好。

The results show that : IMO films prepared by DC reactive magnetron sputtering and channel spark ablation are poly-crystalline bixbyite structure .