电子发射

Cr2O3涂层对Al2O3绝缘瓷二次电子发射特性的影响

Secondary Electron Emission Characteristic of Insulated Al_2O_3 Ceramics with Cr_2O_3 Coating

Si和Si尖上纳米金刚石场电子发射性质的研究

Study on the Field Electron Emission of Nanocrystalline Diamond on Si and Si Tips

X射线及低能γ光子在金属箔透射面的光致电子发射产额

Absolute emission yields of photon - induced electrons from foils On transmissive Surface

Si表面电子发射特性的转移矩阵方法分析

Characteristic Investigation of Field Emission from Surface of Si Using Transfer Matrix Method

这种具有独特几何形貌结构的W纳米线阵列，是理想的新型场致电子发射材料。

The W nanowires with such unique geometry morphology are ideal new field electron emission materials .

不同氮源制备CNx纳米管薄膜及其低场致电子发射性能

Fabrication of CN_x nanotubes films using different nitrogen sources and their low field emission properties

MgO薄膜的制备和二次电子发射性能的表征

Inexpensive Fabrication and Secondary Electron Emission Property of MgO Films

用SEM、AES、EDS对电子发射材料（钪酸盐阴极）及其所用的多孔钨体的分析与研究

A Study of Electron Emission Material and Porous Tungsten by Means of SEM-AES-EDS

Mo-Y2O3阴极的热电子发射性能

Thermionic Emission Properties of Mo-Y_2O_3 Cathode

提高PZT阴极电子发射性能的实验研究

Experimental Study on PZT Cathodes for Improving the Properties of Electron Emission

Ta衬底B掺杂金刚石薄膜电极极化特性掺硼金刚石薄膜二次电子发射特性的研究

Electrochemical behavior of boron-doped diamond thin-film electrodes grown on tantalum Study on Secondary Electron Emission Performance of B-doped Diamond Films

基于InOx纳米岛/C的栅控薄膜电子发射阴极

Gate Controlled Thin Film Electron Emission Cathode Based on InO_x Nanoislands / C

MgO的外逸电子发射在PDP中作用

The Function of Exo-electronic Emission of MgO in PDP

同时，就测试过程中的实验现象以及组成对Al2O3陶瓷二次电子发射特性的影响进行了简要分析和讨论。

Effects of the composition on SEE performance of alumina ceramics were briefly analyzed and discussed .

利用该模型分析了Ni颗粒被移去前后碳纳米管场致电子发射性能的差异。

The model was applied to analyze the difference of field electron emission from carbon nanotubes before and after the Ni particles were removed .

研究了多孔硅衬底微波CVD金刚石薄膜的制备工艺及其场电子发射特性。

Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied .

充分激活的阴极表面层是由（Ba，Sr，Ca）O和超额Ba构成的。超额Ba是电子发射的源泉。

The surfaee layer of a well activated eathode consists of ( Ba , Sr , Ca ) O + Ba .

从最大二次电子发射系数δm和δm对应的能量Em这2个方面，比较了不同二次电子发射特性下表面充电过程及最终平衡电位的异同。

The similarities and differences of charging process of the material with different characteristics of secondary electron emission characteristic is compared .

结果表明，高电荷态离子与固体表面相互作用产生的电子发射产额Y与入射离子的电荷态q、入射角度ψ和入射能量E都有很强的关联。

The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q , incidence angle ψ and impact energy E.

由于He+离子的电荷态是变化的，所以还研究了近程碰撞对总的背向电子发射产额的贡献比例，对C、Cu和Al其值分别是0.5、0.55和0.42。

The contribution fractions of electrons emitted by close collision to the total backward emission yield are 0.5 , 0.55 and 0.42 for C , Cu and Al , respectively .

由极值条件确定MCP通道内壁二次电子发射材料特征常数

Determination of secondary electron emission materials constant on channel wall of MCP using extreme conditions

PSII技术中考虑靶表面二次电子发射的等离子体鞘层演变

Development of the plasma sheath with secondary electron emission in PSII

文章也分析了TCO膜的热电子发射对电池饱和电流的影响。

The effect of thermal emission of TCO on cells performance is also analysed .

用MonteCarlo方法模拟了高速He+离子入射到C，Cu和Al固体表面所诱发的电子发射。

Electron emission for He + incident on solid surfaces of C , Cu and Al was simulated with the Monte-Carlo method . The backward electron emission yields are calculated .

量子化学密度泛函（DFT）理论对分子基态结构进行优化，PM3单组态相互作用方法（CIS）计算单分子态的电子发射光谱，结果与实验值有很好的吻合。

The predicted electronic spectra with PM3 / CIS methods have good agreement with experimental results .

表面传导电子发射显示（SED）是新近开发的一种平板超薄显示器。

The surface-conduction electron-emitter display ( SED ) just is the flat panel display which is empoldered recently .

新型CNT-FED栅极结构表面二次电子发射研究

Secondary Electron Emission from Surface of Novel Gate Structure in CNT-FED

老炼过程对表面放电型ACPDP显示屏内MgO薄膜二次电子发射系数的影响

Influence of Aging Process to the Effective Secondary Electron Emission Coefficient of MgO Film in Surface Discharge ACPDP

随着ThO2尺寸的减小，阴极材料的电子发射能力得到显著提高。

With the size ThO_2 decreasing , the electron emission ability of cathode was improved significantly .

给出了简单结构和能量在30&100keV范围内的H1~+，H2~+及H3~+的二次电子发射系数随时间和能量的变化曲线；

The simple structure of the detector and the dependence of secondary electron emission coefficients for H1 + , H2 + and H3 + in the energy range 30 keV to 100 keV on time and energy are given .