氧化铟锡

氧化铟锡（ITO）膜的光学及电学性能

The optical and electrical properties of the ITO Films

氧化铟锡透明导电玻璃可见光透射率的研究

Study of Transparence of ITO Glass at Visible Wavelengths

热处理对制备纳米氧化铟锡（ITO）粉末的影响

Influence of the Heat Treatment on Nanoscale Indium-Tin Oxide Powder

磁控溅射陶瓷靶制备氧化铟锡薄膜的XPS和AFM研究

XPS and AFM characterization of indium tin oxide film by magnetron sputtering ceramic target

用直流磁控溅射工艺制备了氧化铟锡（ITO）薄膜，研究了厚度对薄膜光学、电学性能的影响规律。

The effect of film thickness on optical , thermal performance of film were studied .

氧化铟锡（ITO）薄膜的透明吸波特性研究

Transparent microwave absorption properties of ITO films

用磁控溅射工艺，在柔性衬底上，在不同直流偏压条件下，制备了ITO（氧化铟锡）透明导电膜。

ITO film was deposited on flexible substrates at different DC bias voltage by RF magnetron .

采用溶胶-凝胶法，在氧化铟锡（ITO）玻璃基质上制备氧化钨电致变色薄膜。

WO_ ( 3 ) electrochromic films were prepared on ITO glass substrates by the sol-gel method .

该传感新方法是在一块氧化铟锡导电玻璃-聚二甲基硅氧烷（ITO导电玻璃-PDMS）芯片上开展的。

This novel approach was performed on a indium tin oxide glass-poly ( dimethylsioxane )( ITO glass-PDMS ) microchip .

随着平板显示器产业的迅速发展，对敷有氧化铟锡（ITO）膜的透明导电玻璃的需求亦日益增长。

The rapid growth of the flat-panel display industry has raised a big demand of ITO-coated transparents conductive glasses .

介绍了氧化铟锡（ITO）薄膜的光学和电学性质及应用。

The electrical and optical properties and the applications of In 2O 3 : Sn ( ITO ) films are introduced .

本文介绍了用铟锡（IT）合金靶和氧化铟锡（ITO）烧结靶制备ITO膜的特点；采用ITO靶时溅射工艺参数对ITO膜性能的影响；

Abstract In this paper , the performance of ITO film prepared with IT alloy target and ITO sintered target are described .

分别将纳米氧化铝（Al2O3）和纳米氧化铟锡（ITO）加入到水性聚氨酯树脂中，改善了水性聚氨酯涂膜的耐磨性能和隔热性能。

Abrasion resistance and thermal insulating properties of waterborne polyurethane coating film were improved by adding nano-Al 2 O 3 and nano-ITO respectively .

以无机盐为出发原料，采用溶胶凝胶法制备了氧化铟锡（ITO）透明导电薄膜。

Indium tin oxide ( ITO ) thin films have been prepared by a sol-gel process using inorganic metal salts as raw materials .

本论文选择醋酸铜溶液体系，在氧化铟锡（ITO）导电玻璃电极上电沉积制备了Cu2O。

In this thesis , we describes electrodeposited cuprous oxide on the ITO glass electrode in copper acetate solution system .

氧化铟锡（ITO）是一种宽禁带、高掺杂的n型半导体，广泛应用于各种显示屏幕的透明电极中。

Indium tin oxide ( ITO ), which is a kind of wide band gap and highly doped n-type semiconductor , is widely used as transparent electrode of various display screen .

使用直流磁控溅射技术，在彩色膜衬底上室温制备出粘附性良好的氧化铟锡（ITO）透明导电薄膜。

Direct deposition of indium-tin oxide ( ITO ) thin film on color filter is of practical use in the construction of advanced flat-panel display .

提出了制备氧化铟锡薄膜（ITO）的磁控反应溅射镀膜设备的关键部件的设计原则。

The design ruling on the key parts of the magnetron reactive sputtering coating equipment for preparation of ITO film has been introduced in the paper .

利用MATLAB高级计算机语言，拟合了大气层外的太阳辐射光谱，给出了氧化铟锡薄膜隔热效果的计算公式与结果。

Using advanced computer language MATLAB , sun radialization spectrum besides aerosphere has been imitated . Calculating formulas of heat-insulating effect on indium tin oxide film have been derived , and calculating results have been given .

在320℃时，如氧化铟锡（ITO）薄膜暴露在乙醇气氛中则其电阻急剧下降。

The electrical resistance of the indium tin oxide ( ITO ) thin films decreases enormously at about 320 ℃ when it is exposed to ethanol vapour .

采用直流磁控溅射法在普通的载玻片（10×10×1.2mm）和400目覆碳的铜网（Φ3mm）上制备了氧化铟锡（ITO）透明导电薄膜。

Indium-tin-oxide ( ITO ) films are prepared by direct current ( DC ) magnetron sputtering .

本文选用玻璃碳（GC）和氧化铟锡（ITO）透明导电玻璃为基体，采用电沉积法在其表面沉积Pt，制备催化电极，并研究制备方式对电极催化活性的影响。

In this paper , we prepare catalytic electrodes on the substrates of glassy carbon ( GC ) and indium tin oxide ( ITO ) transparent conductive glass by electrochemical deposition .

氧化铟锡（ITO）是一种锡掺杂的半导体材料，铟消费量的80%以上用于铟锡氧化物透明电极。

Indium tin oxide ( ITO ) is a tin-doped semiconductor material . ITO material has consumed more than 80 % of the indium produced over the world .

采用在水中分散好的氧化铟锡（ITO）水浆，以及有机硅树脂成膜剂，通过加入共溶剂并调整体系pH值，制得了性能好的透明隔热涂料。

A transparent heat insulation coatings ' with good property has been prepared based on indium / tin oxide ( ITO ) aqueous dispersion , silicone film former , cosolvent at desired pH value .

氧化铟锡（ITO）膜的电阻率及表面粗糙度将影响有机电致发光器件（OLED）的发光效率及其使用寿命。

The resistivity and surface roughness of Indium tin oxide ( ITO ) films will affect the light-emitting efficiency and lifetime of the organic light-emitting diodes ( OLED ) .

制备了以ITO（氧化铟锡）玻璃为基底的纳米TiO2修饰电极并研究了其对鲁米诺电化学发光（ECL）的增敏作用及晶型的影响。

The TiO2 modified ITO ( Indium-Tin oxide ) glass electrode ( TiO2 / ITO electrode ) was prepared and its sensitization for electrochemiluminescence ( ECL ) of luminol was studied .

采用分子膜层层组装的原理，选用亲合素作为DNA固定的第一层介质膜，第二层核酸膜通过层层静电吸附的方法固定到氧化铟锡（ITO）电极表面，制备出核酸传感器界面。

Nucleic acid films were immobilized onto indium-doped tin oxide ( ITO ) electrode through layer-by-layer self-assembly using avidin as the first layer and nucleic acid as the second layer , which functioned as the interface of the electrochemical DNA sensor .

目前应用广泛的透明导电氧化物薄膜主要有氧化铟锡薄膜（ITO）、氧化锌铝膜（AZO）、掺锑氧化锡（ATO）等。

There are many kinds of transparent conductive oxide . The main transparent conductive oxide include indium tin oxide ( ITO ), Al-doped ZnO ( AZO ), tin antimony oxide ( ATO ) etc.

通过对幕墙镀膜生产线的改造，用矩形平面磁控溅射靶大面积生产氧化铟锡（ITO）膜，并对其主要工艺参数介绍了一些浅显的看法。

Through the reformation of the line of curtain wall glass , to produce large scale ITO films by using rectangular plane magnetron sputtering target , and introduce some obvious views about the primary depositing parameters .

纳米氧化铟锡[In2O3（SnO2）]是一种N型半导体材料，以其良好的电导、透光性能而成为电子行业显示器、显像管防静电、防辐射、防眩目的热点材料。

Nanoparticles Indium tin oxide [ In2O3 ( SnO2 ) ] that is an N type semiconductor is an anti-static , radiation protection and anti-glare hotspot material in the electronic industry because of good electroconductibility and optical transmittance .