功率管

电路采用了功率管内置结构，控制模式和调制方式分别采用了电流控制模式和PWM调制方式，从而提高了转换效率。

In order to improve conversion efficiency , the power MOSFET is built-in , the current control mode and the PWM modulation are used .

在功率管驱动电路中，包含了死区时间控制功能，DCM功能，功率管栅宽调整功能。

The proposed MOSFET driver includes dead time controller , DCM controller and gate width controller .

P波段硅脉冲功率管工程实用化研究

Engineering Application Study on P band Si Pulsed Power Transistor

P波段功率管的射频脉冲加速寿命试验

Accelerated Life Tests of P Band Power Transistor Under RF Pulse Condition

其中一个功率管工作在B类，另一个必须工作在非对称的A类。

When one is of Class B the other must be of asymmetrical Class A.

双极RF功率管的深阱结终端

Deep-Trench Termination of Bipolar RF Power Devices

第四，根据功率管的安全工作区理论，设计UPS电源功率管保护电路原理图并进行PCB设计。

Fourthly , according to the safe operating area theory of power transistor of UPS was designed .

CZ硅单晶中旋涡缺陷对低频大功率管制造的影响

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

SPWM控制波形质量好，功率管开关频率低但直流电压利用率低。

The SPWM control has a good waveform but the DC BUS voltage utilization is low .

本文对高反压大功率管组装过程中，使用裸铜TO3P（N）IS引线框进行了研究和探索。

The package processing of lead frame made of bared copper TO 3P ( N ) IS , used in the transistor with high voltage and large current , is developed in the paper .

为了更好的保护外部MOSFET功率管，栅极驱动输入电压被钳位。

In order to better protect the external power MOSFET , the gate driver input voltage can be clamped by the chip .

ECR-PECVD制备UHF大功率管浅结芯片中Si3N4钝化膜的应用研究

Study on the Application of Si_3N_4 Passivation Film in UHF high Power Transistor Shallow Junction Chip by ECR-PECVD

采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAsHBT微波功率管单胞。

An InGaP / GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process .

系统主回路含三相全波整流桥电路，三对IGBT功率管组成的逆变器电路，制动电路及保护电路等。

The main loop includes a three-phase bridge , an inverter module with three IGBT power tubes , a braking circuit and protecting circuits , etc.

软开关PWM技术集谐振变换器与PWM控制的优点于一体，既能实现功率管的零电压开关，又能实现功率管的恒定频率控制，是电力电子技术的发展方向之一。

Soft-switching PWM technique integrates the advantage of resonant converter and constant frequency modulator , which realizes zero-voltage-switching in constant frequency , and is one of the development trends of power electronics .

一般来说，功率管器件的欧姆接触触点以及栅极是采用金材料制作，但是在基于GaN的HEMT中如果仍采用金材料制作这些结构则必须采用特殊的CMOS制程工艺。

Conventionally , gold is used for ohmic contacts and gate structures in power devices , but it makes GaN processing incompatible with conventional CMOS processing .

然后对DVR进行电压补偿过程中涉及到的对功率管、补偿电压输出以及整个DVR系统等的控制策略进行了探讨和分析。

Provided discussion and analysis for the control of IGBT , output of compensatory voltage and the control strategy of the whole DVR system .

MAPHAM式并联输出谐振DC／DC变换器（MPRC）线路，由于功率管串联电感可以获得零电流开通，这是对并联输出谐振变换器（PRC）的改进。

Owing to a series inductor with power transister in MPRC circuit can be obtained zero current swiching-on , and it was an improvement for the Parallel Resonant Converter .

该方案通过实时调整矢量合成顺序，使原本不处于自然换相的功率管处于自然换相状态，从而降低了三相CSR功率管的电压应力。

By exchanging the sequence of the vectors composition , the power switches , could operate in natural commutation state , so the voltage-stresses of power switches are reduced greatly .

对DSP相关寄存器赋值输出移相PWM方波以及符合要求的死区时间，实验证明，PWM方波可以满足零电压软开关逆变点焊电源逆变桥功率管的驱动时序要求。

The phase-shifted PWM square-wave and qualified dead-time are produced by assigning to DSP 's relevant registers . The test results show that the PWM square-wave can meet drive time sequence demand of zero-voltage-switching for spot welding inverter power .

对于新型N￣＋IP发射结结构的微波功率管，采用一维数值模拟，分区计算了它的渡越时间，结果表明其截止频率的小电流特性可以获得明显的改善。

The transit times in the silicon microwave power transistors with the novel structure of N + IP emitter are regionally calculated by one-dimensional numerical simulation . The results indicate that its low current characteristics of the cut-off frequency f_T can be obviously improved .

在某型机载相控阵雷达中，阵面电源采用移相控制零电压软开关PWM变换技术，既能实现功率管的零电压开关，又能实现功率管的恒定频率控制，符合电力电子技术的发展方向。

A PS-ZVS PWM soft switching power supply is applied in an airborne phased array radar , which realizes both zero-voltage-switching and constant frequency control of power tube and accords with the development trend of electrical and electronic technology .

保护电路对于VVVF系统的可靠性、延长装置的寿命及避免功率管损坏都起到决定性作用。

The protection circuit is playing the decisive role in the reliability of VVVF system , lengthening the life of the installment and avoiding the power tube broken .

通过优化InGaP/GaAs异质结双极晶体管（HBT）的材料结构和器件结构，采用BE金属自对准、发射极镇流和电镀空气桥等工艺技术，研制了C波段InGaP/GaAsHBT功率管。

A C-band InGaP / GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning , emitter ballasting , and an electric plated air bridge .

本文描述了一种用VMOS功率管作为开关元件的自激式高频高压脉冲产生电路，可用作霓虹灯驱动电源。

The paper presents a high frequency , high voltage pulse generator by using VMOS power transistors .

为了使单相电源下PMOS和NMOS功率管功耗同时得到优化，信号处理部分设计了正端增益加倍，负端增益压缩的增益变化电路。

To optimize the power dissipation of both PMOS and NMOS power transistors with positive adaptive power supply , variable gain signal processing circuit is designed .

已设计的实验能够在同一仪器上方便地测量MOS功率管的脉冲I-V输出特性、直流I-V输出特性和器件内部的温度。

The experiments presented in this paper can easily be carried out on the instrument designed by the author to measure the pulse I-V , DC I-V characteristics and the inner temperature of MOS power transistors .

文章提供了一种在此条件下进行设计的方法：即首先利用ADS软件，将功率管的小信号S参数制成S2P文件供仿真电路使用；

In this paper , a designing method is presented to deal with this conditions . Firstly , by means of the ADS software , the small-signal S parameters of the power amplifier are utilized to make the file of S2P for the use of the simulation circuits .

基于系统连续运行的功率管老炼筛选方法

Burn-in Screening of Power Tube Based on Continuous Operating of System

脉冲工作状态下微波功率管瞬态特性研究

Study on the Transient CharacteriStics of Microwave Power Transistor Under Pulsed Conditions