剩余射线

理论研究了利用剩余射线带色散补偿相位匹配原理，在Ⅲ-Ⅴ族和Ⅱ-Ⅳ族光学各向同性的半导体非线性晶体中差频产生可调谐THz波的可行性问题。

The tunable , coherent terahertz wave generation in a variety of isotropic semiconductor nonlinear crystals , such as ⅲ - ⅴ and ⅱ - ⅳ compounds , by difference frequency mixing is studied theoretically based on the theory of the cross-Reststrahlen band dispersion compensation phase-matching .

除剩余射线吸收带两侧的双声子吸收结构外，实验首次观察到一个位于波数20&50cm~（-1）的低频吸收带。

In addition to the absorption structures of two phonon combination on both sides of the reststrahlen band of the material , a low frequency absorption band has been observed for the first time between 20-50 cm-1 in all the measured samples .

采取60秒辐射限定了剩余伽玛射线水平的增高。

An irradiation of 60 sec . limits the build-up of excessive gamma radiation levels .