金属有机化学

表面金属有机化学：SnMe4在HY沸石超笼表面的接枝反应

Surface Organometallic Chemistry : Grafting Reaction of SnMe_4 on HY Zeolite Supercage Surface

金属有机化学&历史、现状及展望

Organometallic chemistry & history , current situation , and Prospects

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管（Ⅰ）

MOCVD Growth of GaN-based light emitting diodes and laser diodes (ⅰ)

N2O为氧源金属有机化学气相沉积生长ZnO薄膜的光学性能研究

Optical Properties of ZnO Thin Film Grown by Atmospheric Pressure-Metal Organic Chemical Vapor Deposition Using N_2O as Oxygen Precursor

采用金属有机化学气相淀积外延技术生长外延材料，并在GaAs集成电路工艺线上完成工艺制作。

The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology .

金属有机化学气相沉积（Metalorganicchemicalvapordeposition，简称MOCVD）是制备半导体器件、金属、金属氧化物、金属氮化物等薄膜材料的一种技术。

MOCVD ( Metal Organic Chemical Vapor Deposition ) is a technique of manufacturing film material for semiconductors , metals , metal-oxides , metal-nitride etc.

金属有机化学气相沉积技术（Metal-OrganicChemicalVaporDeposition，简称MOCVD）是制备基于氮化物和ZnO等材料的光电子器件的一种新技术。

MOCVD ( Metal-Organic Chemical Vapor Deposition ) is a new technology to produce nitride materials and ZnO-based optoelectronic devices .

介绍了采用金属有机化学气相沉积方法制备的单结GaAs量子阱太阳能电池。

Solar cells , made of single junction GaAs quantum wells , were fabricated by metal organic chemical vapor deposition .

结果表明，金属有机化学气相沉积法方法在Si（111）衬底上制备ZnO薄膜时，Ag是一种有效的缓冲层。

All the results show that the metal Ag is an effective buffer layer for the growth of ZnO films on Si ( 111 ) substrate with MOCVD method .

利用AlAlNSi（111）MIS结构电容频率谱研究了金属有机化学气相沉积法生长的Si基AlN的AlNSi异质结构中的电荷陷阱态。

The charge trap states of AlN_Si ( 111 ) grown by metal_organic chemical , vapor deposition are studied by the capacitance spectroscopy of Al_AlN_Si MIS structure .

以Fe（CO）5为物源，在常压喷动流化反应器中，以金属有机化学气相沉积（MOCVD）法对云母粉进行包覆，制备铁系-云母珠光颜料。

Iron oxide-mica pearlescent pigment was prepared from Fe ( CO ) 5 in a spout fluidized reactor using metal organic chemistry vapour deposition ( MOCVD ) technique .

表面富锡MCM-41分子筛的表面金属有机化学制备及其对苯酚羟基化催化反应性能研究

Preparation of MCM-41 Richened Tin on the Surface by Surface Organometallic Chemistry and its Catalytic Performance for Hydroxylation of Phenol

以垂直金属有机化学气相沉积（MOCVD）反应器沉积GaN为对象，建立了反应器内部数学模型。

The mathematics model of Metal organic chemical vapor deposition ( MOCVD ) reactor with system of GaN deposition in a vertical reactor is introduced .

采用金属有机化学汽相沉积生长法（MOCVD），在不同的衬底表面处理条件和生长温度下，在GaAs衬底上生长出了ZnO薄膜。

ZnO films were grown on GaAs ( 001 ) substrates at different surface treatment conditions and growth temperatures by metal organic chemical vapor deposition ( MOCVD ) .

特别是在用金属有机化学气相沉积（MOCVD）法生长ZnO薄膜及其p型掺杂方面，还需要更多的研究，否则ZnO基发光器件将难以产业化。

Especially , it needs more research in the growth of ZnO and p-ZnO films by metal organic chemistry vapor deposition ( MOCVD ), otherwise it will be difficult to realize the bulk production of ZnO .

因此，本文围绕选择性剥离GaN外延做了如下四方面工作：1.金属有机化学气相沉积（MOCVD）生长具有Si掺杂的InGaN/GaN量子阱超晶格牺牲层的全结构的LED。

Therefore , this paper focuses on the following works . 1 . Metal organic chemical vapor deposition ( MOCVD ) growth of Si-doped InGaN / GaN quantum well superlattice sacrificial layer for the LED structure .

化学束外延、原子层外延、迁移增强外延、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。

Chemical beam epitaxy , atomic layer epitaxy , migration enhanced epitaxy , selective area epitaxy , laser-assisted epitaxy and low temperature Si epitaxy are new ultrathin epitaxial techniques developed based on molecular beam epitaxy and metallorganic chemical vapor deposition .

金属有机化学气相沉积（MOCVD）法是化学气相沉积法的一种，主要选用金属有机化合物为物源进行化学气相沉积，是目前获取各类特殊功能材料和材料的有效方法之一。

Metal Organic Chemical Vapor Deposition ( MOCVD ), using Chemical Vapor Deposition of metal organic compounds , is an effective method for acquiring special function materials and membrane .

采用低压金属有机化学气相沉积（LPMOCVD）法，成功地在（0001）晶向的蓝宝石（Al2O3）衬底上制备了高质量的GaN薄膜。

High-quality GaN film was successfully deposited on ( 0001 ) - oriented sapphire substrate by low-pressure metal-organic chemical vapor deposition ( LPMOCVD ) process .

采用常压金属有机化学汽相沉积（MOCVD）技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。

The In xGa 1-x N / GaN films were grown on ( 0001 ) sapphire substrates by metal organic chemical vapor deposit ( MOCVD ) using a homemade vertical reactor at atmospheric pressure .

针对半导体激光器的能量损耗情况，设计优化了半导体激光器的结构，改进了材料的金属有机化学气相沉积（MOCVD）生长条件。

Based on the analysis of energy loss in a laser diode , we optimize the structure of the laser diode and metal organic chemical vapor deposition ( MOCVD ) growth condition .

GaInP2/GaAs/Ge级联电池隧道结的结构设计及金属有机化学汽相淀积生长研究

Metal organic chemical vapor deposition growth and structure design of tunnel junction of GaInP_2 / GaAs / Ge tandem solar cells

与此同时，随着分子束外延（MBE）和金属有机化学气相沉积（MOCVD）等生长技术的发展，使VCSEL器件得以飞速提高。

At the same time , the developments of molecular beam epitaxy ( MBE ) and metal organic chemical vapor deposition ( MOCVD ) have made the characteristics of the devices improved rapidly .

Toepler泵在金属有机化学中的应用

Application of Toepler Pump in Organometallic Chemistry

金属有机化学气相沉积（OCVD）一门制备薄膜材料的关键技术。

Metal Organic Chemical Vapor Deposition ( MOCVD ) is a key technology in growing thin-films .

通过与分子束外延（MBE）和金属有机化学汽相沉积（MOCVD）技术的比较，说明了这一新技术的基本概念、生长动力学以及在半导体材料和激光器件方面的应用。

The basic concepts , growth dynamics and applications for semiconductor materials and devices of this technique are presented by comparision with both techniques of molecular beam epitaxy ( MBE ) and metallorganic chemical vapor deposition ( MOCVD ) .

本文借助表面金属有机化学的方法在MCM-41介孔分子筛表面制备出了具有确定结构组成的表面新戊基钛，通过进一步水解、氧化得到表面含钛MCM-41介孔分子筛。

In this paper , we had prepared a well-defined surface neopentyl titanium on the surface of MCM-41 mesoporous molecular sieves by surface organometallic chemistry . The Ti-MCM-41 was prepared through the hydrolysis and oxidation of the surface neopentyl titanium .

甲烷是天然气的主要成分，同时也是一种重要的化工原料。针对甲烷的活化和转化不仅是金属有机化学中C-H键活化的重要研究对象，同时也具有重要的工业价值。

As a major component of natural gas and the most abundant feedstock , the study of methane activation and transformation is not only important for understanding C-H activation in metal organic chemistry , but also plays a significant role in its application to related industries .

采用金属有机化学气相沉积生长了InP/GaAs0.5Sb0.5/InP双异质结晶体三极管（DHBT）材料，研究了材料质量对器件性能的影响。

InP / GaAs 0.5 Sb 0.5 / InP DHBT ( double heterojunction bipolar transistor ) is grown by MOCVD ( metalorganic chemical vapor deposition ) . The influence of material quality on device performance is studied .

金属有机化学气相沉淀反应器结构的模拟优化

Metallo organic chemical vapor deposition Simulation and optimization design in MOCVD reactor