载流子

表观电荷及其激发的场有机LED的界面与载流子注入

Apparent Charge and its Field INTERFACE AND CARRIER INJECTION IN ORGANIC LED

3对LED器件多量子阱有源区载流子输运与复合跃迁的分析。

The carrier transportation and transition in LED active layer had been analyzed .

射频溅射a&Si：F，H中载流子的低温传导

Carrier conduction at low temperature in radio frequency sputtered a-si : f , h

建立了高k栅栈结构与沟道交换载流子的双势垒-单势阱结构模型。

Double barriers and single well structure model for carriers exchange is established .

Matlab在计算半导体费米能级和载流子浓度中的应用

A Method for Calculating Fermi Energy and Carrier Concentrations in Semiconductors with Matlab

ZnSe：Cl，N单晶薄膜中载流子浓度的电学法测量和光学法确认

Examination and Confirmation of the Carrier Concentration in ZnSe : Cl , N Crystal Films by Electrical and Optical Methods

激子和载流子输运研究I.有机肖特基型固态太阳电池

Transport of exciton and charge carrier I in Schottky-type organic solid solar cell

论自由载流子&负U中心相互作用模型作为高Tc氧化物超导体的可能机制

Free carrier & negative u centre interacting model acts as a possible mechanism of the high t_c oxide superconductor

建立了在单层有机发光二极管中电场强度不太大（E≤104Vcm）的情况下，载流子注入、传输和复合的理论模型。

A model for carriers injection , transport and recombination in single layer organic light emitting diodes was presented .

鉴别出非晶态PET中主要载流子类型属空穴型。

It hasbeen confirmed that the main species of charge carriers of amorphous PET are the holes .

低温生长GaAs非平衡载流子的超快动力学特性

Ultrafast carrier dynamics of low temperature grown GaAs

PIN管正偏注入的载流子在Ⅰ层中分布的研究

Study on Distribution of Injected Carrier Densities in the I-Layer of a Forward Biased PIN Diode

半导体PN结与晶体管中载流子运动形式的讨论

On Work Principle of Transistor and Movement Mode of Carrier in PN Junction

纤锌矿GaN载流子输运的蒙特卡罗模拟

Carrier Transport in Wurtzite GaN Using Monte Carlo Method

应变Si（1－x）Gex层本征载流子浓度和有效态密度的温度特性分析

Temperatures characteristics of intrinsic carrier concentration , effective densities of states in strained si_ ( 1-x ) ge_x layers

磁性离子Fe和Ni替代YBCO体系的结构特征和载流子局域化

Characteristics of structure and carrier localization in YBCO systems doped with magnetic ions Fe and Ni

小尺寸MOS器件热载流子效应模拟

The simulation of hot carrier effect in small geometry MOSFET

一种VLSI热载流子退化的嵌入式实时预测方法

An Embedded Real-Time Prediction Method for VLSI Hot-Carrier Degradation

深亚微米MOSFET热载流子退化机理及建模的研究进展

Recent Advances in Deep Submicron MOSFET 's Hot Carrier Degradation

少数载流子在Si－SiO＿2界面的复合对双极器件的影响很大。

The recombination of minority carriers at Si-SiO_2 interface has a great effect on bipolar de-vices .

GaAs膜内注入载流子感生的折射率相对变化谱及其对光开关特性的影响

Relative refractive index variation spectra of a GaAs film and its effect on optical switch characteristic

动态应力下MOS器件热载流子效应研究

Study on Hot-carrier Effects in MOSFET under Dynamic Stress

对同一工艺制作的几种不同沟道长度的MOSFET进行了沟道热载流子注入实验。研究了短沟MOS器件的热载流子效应与沟道长度之间的关系。

Hot carrier effects of MOSFET with different channel lengths have been investigated .

SOA注入电流及载流子寿命对UNI开关窗口的影响

Influences of Injection Current and Carrier Lifetime of SOA on Switching Window of UNI

双脊波导横向PIN结构可以进一步增大载流子的注入面积，提高载流子的利用率。

The new structure can enlarge the injection area and accordingly enhance the efficiency of the charge carriers utilization .

沟道热载流子导致的SOINMOSFET's的退化特性

Channel Hot-Carriers Induced Degradation Behavior in SOI NMOSFET 's

由Seebeck系数的正负号确定载流子的类型是P型还是N型。

The charged carriers could be distinguished to be P-type or N-type according to the sign of the Seebeck coefficient .

瞬态光电导谱研究Pt的负载对TiO2光生载流子寿命的影响

Effect of Platinum Loading on Lifetime of Photogenerated Charge Carriers of TiO_2 Studied by Time-resolved Photoconductivity

N型4H-SiC中载流子密度和霍耳迁移率的模拟及研究

Modeling and Analysis of Temperature Dependence of the Carrier Concentration and Hall Mobility in N-type 4H-SiC

利用飞秒瞬态反射谱，研究了GaAs的载流子的超快动力学特性。

The ultrafast dynamics property of the GaAs carrier is studied with the femtosecond transient reflection spectroscopy method .