等离子体增强化学气相沉积

本文采用微波电子回旋共振化学气相沉积（MW-ECR-CVD）、射频耦合等离子体增强化学气相沉积（PECVD）及射频磁控溅射技术制备出完全取向生长的h-BN薄膜。

The oriented h-13N films were prepared by MW-ECR-CVD , RadioFrequency ( RF ) coupled PECVD and RF magnetron sputtering technologies .

用Raman散射谱研究了以SiH4/H2为气源，用等离子体增强化学气相沉积技术，低温制备的一系列硅薄膜的微结构特征。

The microstructure of silicon thin films fabricated at low temperature by plasma enhanced chemical vapor deposition ( PECVD ) using H2 / SiH4 has been studied by Raman scattering .

残余氯在等离子体增强化学气相沉积TiN膜中的偏聚过程研究

Segregation of Residual Chlorine in Plasma & Enhanced Chemical Vapor Deposited TiN Film

退火温度对等离子体增强化学气相沉积方法生长的ZnO薄膜质量的影响

Influence of Annealing Temperature on ZnO Film Growth by Plasma Enhanced Chemical Vapor Depositon

循环氩离子轰击-等离子体增强化学气相沉积TiN膜组织与性能研究

Structure and properties of repeated Ar + bombardment-plasma enhanced chemical vapour deposition ( pecvd ) TiN Films

研究结果表明：用射频等离子体增强化学气相沉积法，可以在PET上沉积厚度为纳米至微米级的非晶碳氢膜。

The results show : the amorphous hydrogenated carbon film can be fabricated on PET surface by plasma-enhanced chemical vapor deposition .

常压等离子体增强化学气相沉积纳米晶TiO2多孔薄膜的研究

Study of Porous Nanocrystalline TiO_2 Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapour Deposition

偏压对低气压等离子体增强化学气相沉积TiO2薄膜的结构和性能的影响

The Effect of Bias on Low Pressure Plasma-Enhanced Chemical Vapour Deposition of TiO_2 Film and its Structure and Performance

用等离子体增强化学气相沉积（PECVD）法制备了不同工艺条件下的含氟碳膜。

A-C : F thin films were prepared by PECVD method under different conditions .

本工作采用螺旋波等离子体增强化学气相沉积技术，在单晶Si及石英衬底上制备了纳米SiC薄膜。

Nanocrystalline silicon carbide ( SiC ) thin films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( HWP-CVD ) on single crystalline silicon and quartz substrates .

本文报道了采用高压射频等离子体增强化学气相沉积（RF-PECVD）方法制备高电导、高晶化率的p型微晶硅材料的结果。

The results about highly-crystallized , highly-conductive p-type microcrystalline silicon (μ c-Si : H ) prepared by high-pressure RF-PECVD are reported in this paper .

采用正交试验法对PCVD等离子体增强化学气相沉积渗硅的工艺进行了优化。

Orthogonal test is used to optimize the PCVD process for producing high silicon steel .

本课题采用射频等离子体增强化学气相沉积法和射频磁控溅射两种沉积方法在聚碳酸酯（PC）片上沉积类金刚石碳膜（DLC）。

The diamond-like carbon ( DLC ) films were prepared on polycarbonate ( PC ) by methods including plasma-enhanced chemical vapor deposition and radio frequency magnetron sputtering .

对不同的本底真空条件下，采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μcSi∶H）薄膜中的氧污染问题进行了比较研究。

Investigations on the oxygen contamination in the μ c-Si ∶ H thin films deposited by very-high-frequency plasma-enhanced chemical-vapor deposition ( VHF-PECVD ) technique with and without load lock chamber have been reported in this paper .

研究了用甚高频等离子体增强化学气相沉积（VHF-PECVD）方法制备的不同沉积气压下的微晶硅薄膜样品。

Samples deposited at different deposition pressures by VHF-PECVD were studied .

采用等离子体增强化学气相沉积方法（PECVD），在低衬底温度下制备了富硅氮化硅薄膜。

The Si-rich silicon nitride films were prepared by plasma enhance chemical vapor deposition ( PECVD ) technique at low temperature .

对等离子体增强化学气相沉积技术（PECVD）制备的微晶硅（μc·Si）薄膜的电导率、光学带隙和晶化率随温度和功率的变化规律进行了研究。

Microcrystalline silicon film was prepared by the plasma enhanced chemical vapor deposition ( PECVD ) . The performance of μ c-Si : H film changed with pressure and temperature has been investigated .

在掺杂P室采用甚高频等离子体增强化学气相沉积（VHF-PECVD）技术，制备了不同硅烷浓度条件下的本征微晶硅薄膜。

A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition ( VHF-PECVD ) at different silane concentrations in a P chamber .

作者考察了基体离子注氮预处理对等离子体增强化学气相沉积（PECVD）TiN镀层结合强度及耐磨性的影响。

The effect of substrate surface pretreatment by nitrogen implantation on the adhesive strength and antiwear properties of plasma enhanced chemical vapour deposition ( PECVD ) TiN coatings was studied .

采用在等离子体增强化学气相沉积（PECVD）系统中沉积aSi：H和原位等离子体逐层氧化的方法制备aSi：H/SiO2多层膜。

A-Si : H / SiO_2 multilayers were fabricated by silicon deposition and in situ plasma oxidation in plasma enhanced vapor deposition system ( PECVD ) .

以金属有机化合物（MO）四甲基锡[Sn（CH3）4]为源物质，采用等离子体增强化学气相沉积技术（PECVD），在玻璃片上制备了SnO2–x薄膜。

The SnO2 – x thin films were prepared on glass by MO-PECVD process , in which metal-organic compound Sn ( CH3 ) 4 was used as a source materials .

利用感应耦合等离子体增强化学气相沉积法以Ar，He，N2和B2H6为反应气体制备了高纯立方氮化硼薄膜。

Chemical species in the low-pressure inductively coupled plasma for cubic boron nitride ( cBN ) film deposition using B_2H_6 , N_2 , He and Ar as reactant gases were investigated by quadrupole mass spectrometry .

用射频等离子体增强化学气相沉积（RF-PECVD）法制备氮掺杂氟化非晶碳（a-C：F：N）薄膜。

Nitrogen doping fluorinated amorphous carbon ( a-C : F : N ) thin films were prepared by RF-PECVD .

采用射频等离子体增强化学气相沉积（RF-PECVD）技术在高沉积功率、低衬底温度的条件下沉积微晶硅薄膜材料。

The microcrystalline silicon thin film materials were deposited by RF-PECVD technology at high plasma power and low substrate temperature .

使用CF4和CH4为源气体，利用射频等离子体增强化学气相沉积（rfPECVD）法制备了掺氟非晶碳（aC：F：H）薄膜，并在N2气氛中进行了不同温度的退火。

Amorphous , fluorinated and hydrogenated carbon film was grown by RF plasma enhanced chemical vapor deposition ( RF-PECVD ) with CF 4 and CH 4 as the gaseous sources .

为了比较，采用自制的微波-等离子体增强化学气相沉积（M-PECVD）反应器制备了迷宫状的垂直取向石墨烯（MVG）。

Maze-like vertically-oriented graphene ( MVG ) was grown with a home-made surface mode microwave-PECVD reactor for comparison . 2 .

本文采用自制的磁控弧光射频等离子体增强化学气相沉积设备在生物玻璃基板上制备类金刚石碳（DLC）膜。

Diamond-like carbon ( DLC ) films were deposited on the biological substrates by the self-made radio-frequency magnetron plasma enhanced chemical vapor deposition ( RF magnetron PECVD ) device in this paper .

使用三氟甲烷和苯的混合气体，利用微波电子回旋共振等离子体增强化学气相沉积法制备了F/C比在011&062之间的αC∶F薄膜。

Amorphous fluorinated carbon (α C ∶ F ) films with F / C ratios between 0.11 and 0.62 are prepared by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition using trifluoromethane ( CHF 3 ) and benzene ( C 6H 6 ) as source gases .

本文采用射频等离子体增强化学气相沉积（RF-PECVD）技术高速沉积微晶硅薄膜。

Microcrystalline silicon (μ c-Si : H ) films were grown by RF plasma enhanced chemical vapor deposition ( PECVD ) .

传统等离子体增强化学气相沉积（PECVD）技术，工艺成熟，制备的薄膜质量高，较适合大规模工业化生产。

For the high technical maturity and the high deposition quality , traditional plasma enhanced chemical vapour deposition ( PECVD ) technology was wide applied in the large-scale industrial production .