磁阻效应

N型锑化铟的电导率，霍尔效应和横向磁阻效应

Conductivity Hall effect and transverse magnetoresistance effect of N type indium antimonide

掺铁镨基钙钛矿氧化物材料Pr-Ca-（Mn，Fe）-O中的大磁阻效应

Colossal Magnetoresistance Effects in Pr-Ca - ( Mn , Fe ) - O Perovskite Oxides

本文研究了P型金刚石膜磁阻效应。实验研究发现金刚石膜有显著的磁阻效应，并与磁阻器件结构有关。

In this paper , the magnetoresistive effect of P-type diamond films was investigated .

急冷Al-Si超导合金的负磁阻效应

Negative magnetoresistivity of rapidly quenched superconducting alloy ai-11.3 at % Si

另外，研究了AZO薄膜的塞贝克效应和磁阻效应。

The Seebeck and magnetoresistive effects were also studied .

急冷Al-Si合金负磁阻效应的一个可能解释

A possible explanation for the negative magneto-resistance effect in the rapidly cooled Al-Si Alloys

首次观察到了负磁阻效应、回滞、Hall系数反常等现象。

The phenomena , such as negative magnetoresistance , hysteresis , anomaly of Hall coefficient , etc. , were observed for the first time .

La（0.67）Ca（0.33）Mn（1-x）TxO3低场下的大磁阻效应

Colossal Magnetoresistance Effect ofLa_ ( 0.67 ) Ca_ ( 0.33 ) Mn_ ( 1-x ) T_xO_3 under Low Magnetic Fields

由于的潜在的巨磁阻效应（CMR）现象，过去大量的工作专注于空穴型掺杂钙钛矿结构的锰氧化物。n型掺杂GaAs中重空穴的飞秒动力学

It may underlie the phenomenon of colossal magnetoresistance ( CMR ) in hole-doped perovskite manganites studied extensively in recent years . FEMTOSECOND HEAVY HOLE DYNAMICS IN n DOPED GaAs

通过求解弛豫近似下的Boltzmann方程，利用并联电阻模型，研究了P-型异质外延金刚石膜的磁阻效应。

Taking the parallel connection resistance model , a theoretical description of the MR effect in heteroepitaxial diamond films is presented by solving the Boltzmann transport equation in the relaxation time approximation .

GZO薄膜具有较强的磁阻效应，磁阻随磁场强度和薄膜迁移率的增大而增大。

GZO film has strong magnetoresistance . The reluctance increased with the increases of magnetic field strength and Hall mobility .

非晶态Ni-Si-B合金薄膜的霍耳效应和磁阻效应

The Hall effect and magnetoresistance of amorphous ni-si-b alloy film

其中基于巨磁阻效应（GMR）的MRAM以其非挥发性、高速读取和低能耗的特点而有望成为下一代通用存储器，因而是信息存储领域最具吸引力的研究方向之一。

MRAM has the advantages of nonvolatility , fast write and read times and low power consumption , and is potentially to be the memory standard .

本文介绍巨磁阻效应（GMR）及其相关传感效应，将重点放在这种传感效应在计算机硬盘驱动（HDD）方面的最新应用与开发。

This paper introduces the giant magneto resistance ( GMR ) effect and emphasis on their recent application and development to the hard disk drive ( HDD ) for computer .

第五章对oligoyne-bipyridyl（OBP）分子两端连接半无限Ni电极的分子结体系的自旋极化输运及隧道磁阻效应进行了研究，给出了计算得到的初步结果。

In chapter ⅴ, we investigated the spin-polarized transport and tunneling magne-toresistance ( TMR ) effect of molecular junction of OBP molecule with semi-infinite Ni electrodes , and gave the primary results .

从非线性Kubo公式出发，计算了磁三明治结构的巨磁阻效应。

In this paper , from the non-linear Kubo formula , GMR effects at the interfaces of sandwiches structure have been studied .

管惟炎等人观察到的Al-Si急冷合金的负磁阻效应，实际上就是以R-He曲线的形式表示出来的第二类超导膜的纵场峰值效应。

The analysis of the present letter shows that the negative magneto-resistance effect , observed by Guan Wei-yan et al . in rapidly cooled Al-Si alloys , is nothing but the longitudinal peak effect in films of type II superconductors displayed in the form of R-He curves .

讨论了铁磁性金属薄膜中的各向弄性磁阻效应。

The anisotropic magnetic effect of ferromagnetic films is discussed .

薄膜磁阻效应计算机控制自动测试方法的研究

Research on film magnetic-resistance effect measured automatically by computer control

霍尔与磁阻效应变送器的研究

Study on a Transducer of Hall and Magnetro-resistance Effects

扩展到可见光波段的磁阻效应增强型光电传感器

Magnetoresistivity enhanced photoelectric sensor expanded into visible spectrum range

CoFe/Cu多层膜巨磁阻效应的研究

Study of Giant Magnetoresistance in CoFe / Cu Multilayer

铁磁体肖特基金属体半导体复合纳米结构的巨磁阻效应

Giant Magnetoresistance Effect in Hybrid Ferromagnetic-Schottky-metal and Semiconductor Nanostructures

巨磁阻效应研究的最近进展

Recent development of research in giant magneto-resistance effects

磁阻效应增强型锑化铟红外光电传感器

A Indium Antimonide IR-photoelectric Sensor Enhanced by Magnetoresistance

电沉积铜/镍纳米多层膜及巨磁阻效应

Cu / Ni Nanometer Multilayer Film Prepared by Electrochemical Deposition and its Giant Magneto Resistance

磁阻效应在高铁含量时只能在低温观察到。

The magnetoresistance effect can be observed at low temperature for samples with higher Fe content .

基于磁阻效应的镀层工件漏磁检测传感系统设计

The System Design of a Magnetic Leakage Testing Sensor for the Plating Layer Parts Based on Magnetoresistance Effect

虽然没能在样品中发现多层膜结构，但样品中仍出现了较大的负磁阻效应。

Though the multi-layer structures were not existed in the samples , a large negative magnetoresistance was also obtained .

p-型金刚石膜具有显著的磁阻效应，是近年来才发现的新现象。

In past several years , a significant magnetoresistive ( MR ) effect has been found in p-type diamond films .