磁阻

开关磁阻电机MATLAB仿真模型研究

Research on Simulation Model of Switched Reluctance Motor Based on MATLAB

基于DSP的横向磁场直线开关磁阻电机驱动系统

DSP-based Drive System for Transverse Flux and Linear Switched Reluctance Motor

本文研究了P型金刚石膜磁阻效应。实验研究发现金刚石膜有显著的磁阻效应，并与磁阻器件结构有关。

In this paper , the magnetoresistive effect of P-type diamond films was investigated .

基于DSP的开关磁阻启动/发电机系统研究

Research and Experiment on DSP-based Vehicle Integrated Switched Reluctance Starter Alternator System

用于自组装巨磁阻材料的铁磁性纳米Co粒子的研制

Development of ferromagnetism nanometer Co particles used for self-assembled

通过MATLAB电力电子仿真论证了此开关磁阻功率电路的可行性。

The feasible of this power circuit is proved by simulation of MATLAB .

用DSP实现开关磁阻电机的增益调度控制

The Implementation of Gain-scheduling Control on SRM with DSP

基于DSP的直线开关磁阻电机设计

Design of Linear Switched Reluctance Motor Based on DSP

基于MATLAB的无位置传感器开关磁阻电机系统的仿真研究

The Simulation Research of Non-Position Sensor of the Switched Reluctant Motor System Based MATLAB

开关型磁阻电动机PWM调压调速系统性能小信号分析

Small signal analysis for a PWM chopper-controlled switched reluctance drive

基于ANSYS软件的开关磁阻电机磁场分析

Analyses on the Magnetic Field of Switching Reluctance Machine Based on ANSYS Software

薄膜Pt电阻温度计的标定及低温磁阻

Calibration of the Pt film resistor thermometer and its magnetoresistance in low temperature

急冷Al-Si超导合金的负磁阻效应

Negative magnetoresistivity of rapidly quenched superconducting alloy ai-11.3 at % Si

首先介绍了开关磁阻电机的基本控制策略，在此基础上进行基于DSP的控制器的软件分析；

This paper introduces the basic control strategy firstly , and then put up the software analyse based on DSP controller .

另外，研究了AZO薄膜的塞贝克效应和磁阻效应。

The Seebeck and magnetoresistive effects were also studied .

接着分别采用内模PI控制策略和单神经元PI控制策略对开关磁阻起动/发电系统发电电压闭环控制进行了设计。

The generating closed loop control is designed by the internal model PI control and single neuron PI control .

利用Matlab的Simulink工具箱，对直线开关磁阻电机进行了仿真分析，仿真和实测结果吻合较好。

Matlab / Simulink toolbox is used to do simulation . Result of simulation and experiment validate the conclusion .

急冷Al-Si合金负磁阻效应的一个可能解释

A possible explanation for the negative magneto-resistance effect in the rapidly cooled Al-Si Alloys

基于CMEXS-函数开关磁阻电机控制系统仿真建模研究

Study on Modeling and Simulation of Switched Reluctance Motor Control System Based on C MEX S-function

提出了一种开关磁阻电机（SRM）数学建模的新方法。

A novel mathematic model for switched reluctance motor ( SRM ) was proposed .

首次观察到了负磁阻效应、回滞、Hall系数反常等现象。

The phenomena , such as negative magnetoresistance , hysteresis , anomaly of Hall coefficient , etc. , were observed for the first time .

文章介绍了开关磁阻电机及ANSYS软件，并通过实例分析，得出了一些有益的结论。

This paper introduces the switching reluctance machine and ANSYS software , and draws some beneficial conclusions through the analyses on actual examples .

分析了无轴承开关磁阻电机（SRM）径向悬浮力产生原理。

Principle of producing radial force in bearingless switched reluctance motor ( SRM ) is !

La（0.67）Ca（0.33）Mn（1-x）TxO3低场下的大磁阻效应

Colossal Magnetoresistance Effect ofLa_ ( 0.67 ) Ca_ ( 0.33 ) Mn_ ( 1-x ) T_xO_3 under Low Magnetic Fields

论文也对几种具有相同定子但转子结构不同的HTS磁阻电动机做了比较，比较结果显示，ALA式HTS磁阻电动机比内反应式HTS磁阻电动机具有更大的输出转矩；

The paper also compared several types of HTS reluctance motors which have different structures .

开关型磁阻电机调速系统（SRD）微机控制的实现

Realization of Microcomputer Control of Switched Reluctance Drive ( SRD ) System

论文提出了一种基于径向基函数（Radialbasisfunction）神经网络在线辨识的开关磁阻电机（SRM）单神经元PID自适应控制新方法。

This paper presents an novel approach of single neuron adaptive control for switched reluctance motors ( SRM ) based on radial basis function ( RBF ) neural network on-line identification .

详细介绍GPS和磁阻传感器组合定位系统的系统组成、工作原理，并介绍了磁阻传感器的测量原理和误差补偿算法。

The structure and the system principle of the GPS / MR integrated navigation system are introduced . The operating principle and the error compensation of the magnetoresistance are discussed .

测量了取向（110）的n型锗单晶在0&7000高斯范围内弱场磁阻随磁场强度和温度变化的关系；

For single crystal of n-type Ge with orientation ( 110 ), the relation of magneto-resistance in weak field with respect to magnetic intensity in range 0-7000 gauss and temperature variation are measured .

用几何磁阻法分析低噪声MESFET的噪声性能

Analysis of Noise Characteristics in GaAs Low-Noise MESFET Using a Geometric Magnetoresistance Method