方块电阻

ZnO：（Li，Al）薄膜方块电阻经测试在20Ω/□左右。

ZnO : ( Li , Al ) thin film sheet resistance has been tested in the 20 Ω / □ or so .

溅射条件对InSb薄膜方块电阻的影响

The Effect of Sputtering Conditions on the Sheet Resistance of InSb Thin Films

ITO膜方块电阻测试条件的探讨

Discussion of the Measurement Condition for ITO Film Sheet Resistivity

用这种新颖的工艺流程制备了优质的ITO透明导电膜，方块电阻为5Ω时，透光率大于90%，并对静态、动态和退火工艺的实验结果进行了综合分析。

The experimental results of the static , dynamic and annealing technology are given and analyzed here .

利用X射线衍射和能量散射X射线能谱表征方法，并结合薄膜方块电阻的测定，探讨了热处理方式和热处理温度对薄膜化学组成及薄膜电阻的影响。

Then , the effects of heat treatment and temperature on the chemical composition and sheet resistance of the prepared films were investigated by XRD , EDXS and sheet resistance measurements .

由X射线衍射分析试样结构随温度的变化，并测试了样品的方块电阻、电阻率、Hall迁移率、载流子浓度等电性能和膜层的可见光透过率。

The microstructure of the films was determined by X - ray diffraction . The electrical properties of the films such as resistivity , Hall mobility and carrier concentration were measured .

最后，测量了ITO薄膜的温度特性，结果显示，方块电阻与温度的关系曲线斜率从正变化到负。

The temperature characteristics of the ITO film measured show that the slope of the conductivity-temperature curve varies from a positive value to a negative one .

结果表明，使用PLD方法制备的ITO导电薄膜在可见光区的平均透光率约为80%，方块电阻在100~200Ω/□之间。

The average optical transmittance was 80 % in the visible light range . The sheet resistance was about 100 ~ 200 Ω / □ .

分析结果表明：ZAO薄膜的方块电阻受掺杂浓度以及退火温度的影响较大。

The result indicates that dopant concentration , annealing temperature have strong influence on the sheet resistance of the films .

实验中通过改变磁镜场的磁镜比和磁场大小，研究了弱磁场对SnO2薄膜方块电阻及电阻分布的影响。

The effect of magnetic mirror field on the electric properties of SnO 2 thin films is investigated .

其中PN结方块电阻的大小对电池性能有着重要的影响，因此有必要对扩散的最优方块电阻进行研究，从而提高电池转换效率。

The sheet resistance has a significant impact to the battery performance , it is necessary to study the optimal resistance and the way to improve cell conversion efficiency .

阻挡层ZnO薄膜在经历温度交变试验过程以后，其方块电阻不变但透射系数有所增加，反射系数基本不变；

After suffering the variational temperature by turns , the square resistance and reflect coefficient of the bar layer ZnO film have no obvious change and that the transmission coefficient has small increase .

研究了In掺杂量、衬底温度Ts与簿膜的方块电阻、晶粒大小等的关系。

We have studied the relation to the In-doped quality , the substrate tem - perature Ts and the square resistence , grain size of CdS thin films .

研究了Ag厚度、退火温度、退火时间对Ag/ITO多层膜的透过率、方块电阻和接触电阻率的影响。

The effects of the insert Ag layer thickness , annealing time and annealing temperature on the transmission , specific contact resistance and sheet resistance of Ag / ITO multilayer films were investigated .

在热处理温度相同时，预先镀有SiO2膜的玻璃基片上制备的锑掺杂二氧化锡（ATO）薄膜的方块电阻较没有镀SiO2的小。

The sheet resistance of antimony-doped tin dioxide thin film coated on soda-lime glass with SiO_2-coated is lower than that of without SiO-coating at the same heat treatment condition .

采用了补氧直流磁控反应溅射工艺制备ITO膜，在不同基片加热温度和补氧流量下获得最低方块电阻值的最佳制备工艺。

ITO films were fabricated by oxygen-suppling DC magnetism reactive sputtering technology . Optimal fabricating technology including heating temperature of substrate and oxygen supplying flow was found to obtain minimum square resistance value .

本文根据半导体材料薄层方块电阻的测试原理，探讨并提出了ITD膜方块电阻的测试条件。

According to the measurement principle of thin film sheet resistivity of semi-conductor material , this paper discuss and put forward the measurement condition of ITO film sheet resistivity .

通过改变掺杂量和选择合适的工艺条件可控制掺氟SnO2薄膜的方块电阻，其最小方块电阻值达10Ω/□。

The sheet resistance of the films can be controlled by changing doping amount of F ions and choosing favorite process conditions , the minimum is 10 Ω / □ .

五氧化二磷升华制备p-n结，对方块电阻影响最大的是反应时间，其次是气流量和硅片反应温度，P2O5升华温度影响较小。

Preparation p-n junction by phosphorus pentoxide sublimation , the most influence on square resistance is reaction time followed by flow and silicon reaction temperature , the least is phosphorus oxychloride diffusion .

讨论了高品质ITO膜具有低红外发射率的物理机理，并提出了低红外发射率临界方块电阻值，这有利於理论研究和工艺制备红外隐身ITO膜。

Physical mechanism of low infrared emissivity for ITO film is discussed , and the critical sheet resistance of low infrared emissivity , which conduce to the theoretical study and the manufacture of infrared stealthy ITO film , is put forward in this paper .

利用电化学沉积法，以65±1℃的0.1mol/LZn（NO3）2水溶液作为电解质溶液，在方块电阻为118Ω/□的氧化铟锡（ITO）玻璃基板上制备了ZnO薄膜。

ZnO thin films were electrochemically deposited onto an indium tin oxide ( ITO ) glass substrate with a high sheet-resistance of 118 Ω / □ from an electrolyte consisted of 0.1 mL Zn ( NO3 ) 2 aqueous solution at 65 ± 1 ℃ .

A1的热扩散共掺杂使载流子浓度提高，且其浓度的提高可以抵消杂质散射引起的迁移率下降，降低薄膜的方块电阻。

We found that thermal diffusion of A1 , coated on glass substrate , into the films considerably increases charge carrier concentration , which , in turn , cancels out the decrease of mobility induced by impurity scattering and reduces sheet resistance of the films .

多层平面分层介质系统的电磁性能与ITO膜（方块电阻为8Ω）所在界面位置和平面分层介质系统层数及各层厚度等有关。

The research shows that the electromagnetic performances of the multilayer media are related to ITO ( with sheet resistance 8 Ω) film 's interface location , the layer number of the plane delamination media and the thickness of the plane delamination media , and so on .

结果表明，氧气与四甲基锡（氮气携带）流量比为10：6，衬底温度为150℃，淀积时间为2h制备的薄膜表面平整，方块电阻大约为36.5？

The results show that the film surface is smooth and plane under the preparing conditions that the flow rate of O2 and Sn ( CH3 ) 4 carried by N2 is 10 to 6 , substrate temperature is 150 ℃ and deposition time is 2 h.

随着束流密度的增加，硅化钼生长，薄层硅化物的方块电阻Rs明显下降，当束流密度为0.5A／m2时，Rs达到最小值90Ω，说明连续的硅化物已经形成。

It was found that the Mo silicides grown up and sheet resistance Rs decreased with increasing ion flux . The minimum Rs of 90 Ω was obtained when the ion flux of 0.5A/m2 was used , it indicated that continuos layer of Mo silicides were formed .

实验结果表明，随着磁镜比和磁场强度的增加，SnO2薄膜的方块电阻在降低，且电阻分布变得比较均匀；

Our experimental results show that the square resistance of SnO 2 thin films decreases , and the axial distribution of the square resistance of thin films become more uniform , with the increase of the magnetic mirror ratio and the magnetic field intensity .

对衬底温度，方块电阻进行了研究。

Sheet resistance of films deposited at various substrate temperatures was studied .

超高真空陶瓷管内壁镀膜的方块电阻测量

Square Resistance Measurement of Inner Surface Coating of Ultra-high Vacuum Ceramic Pipes

手持式导电薄膜方块电阻测试仪的设计原理和方法

The designing principle and applying method about portable sheet Resistance of electric-conduction film

薄层方块电阻自动测量法

The Automatic Measurement of Sheet Resistance SPLIT-PHASE METHOD