硅材料

连续CO2激光熔凝太阳能硅材料

CW co_2 laser melting and coagulating of solar silicon material

SiC材料具有许多优于硅材料的优良性质，已成为国际上新材料、微电子和光电子领域研究的热点。

Due to possessing excellent properties excelling silicon material , SiC material is becoming a research hotspot of new materials , microelectronic and photoelectron .

以硅材料为基础的微机电系统MEMS被人们认为是21世纪革命性的新技术，是实现信息采集、处理、执行一体化，使之成为真正的系统。

The new technology MEMS based on silicon integrate the collection , process and executing of the information .

采用XRD、IR、SEM、N2吸附曲线等测试手段对经540℃热处理后的介孔氧化硅材料的结构进行了表征。

Then the characteristics of silica samples after calcination at540 ℃ were investigated using XRD , IR , SEM , N2 adsorption technique .

SF6/O2/CHF3混合气体对硅材料的反应离子刻蚀研究

Study on Reactive Ion Etching of Silicon in SF_6 / O_2 / CHF_3 Mixtures

把这种高速生长的微晶硅材料用作太阳电池的本征吸收层，在没有优化工艺参数和没有采用ZnO增反电极时，电池的转换效率达到4.8%。

Using this intrinsic microcrystalline silicon film as absorber layer in single-junction solar cell , a conversion efficiency of 4.8 % was obtained .

本文报道了采用高压射频等离子体增强化学气相沉积（RF-PECVD）方法制备高电导、高晶化率的p型微晶硅材料的结果。

The results about highly-crystallized , highly-conductive p-type microcrystalline silicon (μ c-Si : H ) prepared by high-pressure RF-PECVD are reported in this paper .

发现使用CMC水性粘结剂体系代替传统的PVDF体系粘结剂能够有效的提高纯硅材料的循环性能，而对于碳包覆硅纳米材料，使用PVDF粘结剂时效果较好。

Discovered that cycle properties of pure silicon could be improved when using CMC of water-based adhesive system instead of the traditional PVDF .

激发频率对VHF-PECVD制备微晶硅材料性能的影响

Effect of excitation frequency on microcrystalline silicon materials prepared by VHF-PECVD

VHF-PECVD制备微晶硅材料及电池

Microcrystalline Silicon Material and Solar Cells Fabricated by VHF-PECVD

方法：1、直接购买氨基改性前的介孔硅材料SBA-15，观测其形态、红外光谱图像、吸附-脱附能力，用于载药研究。

Purchased mesoporous silicon material SBA-15 , observed its morphology , IR images , adsorption-desorption capacity for drug research . 2 .

本文以阳离子表面活性剂&正十六烷三甲基溴化铵（CTAB）为结构模板剂，在强酸性条件下，通过水热反应合成了纯的介孔氧化硅材料。

In this thesis , the pure mesoporous silica were synthesized through water-thermal reaction by using cationic surfactant cetyltrimethyl-ammonium chloride ( CTAB ) as template under strong acid condition .

针对这些不足，为了在无保护层条件F减缓硅材料在水溶液中的钝化，同时提高硅的光催化氧化能力，采用电化学刻蚀法制备了大孔表而密布纳米孔的分级多孔硅。

Therefore , in order to inhibit passivation of silicon in aqueous solution without protective layer and to enhance the photocatalytic oxidation ability , hierarchically porous silicon was fabricated through electro-assisted chemical etching using a silicon wafer as a substrate .

通过实验研究表明，大功率CO2激光器在廉价硅材料制备中应用的可能性。

Application of high power CO2 Laser in the field of cheap silicon preparation was discussed in this paper . Some research work has been done . The crystallization and purification of the laser smelting silicon were analysed .

由于以上众多优点，以嵌段共聚物作为结构导向剂合成的介孔氧化硅材料SBA-15及其相关材料成为近年来的研究热点之一。

Because of the above numerous advantages , the mesoporous molecular sieve SBA-15 synthesized by using triblock copolymers as structure directing agents as well as its correlative materials are becoming one of the research focuses in recent years .

因此在设计中，选用了具有低噪声基底、高截止频率（70GHz）、高集电极电流容量的锗化硅材料的NPN晶体管，有利于提高系统的噪声性能。

The low phase noise potential of K-band VCO using NPN silicon-Germanium transistor with low noise floor , high cut-off frequency ( 70GHz ) and high collector current capacity has been studied in detail .

本文认为，制作高效率太阳电池的硅材料，除常规要求外，还应对其深中心浓度有严格的要求，即DLTS谱中不出现明显的谱峰。

More strict requirements have to be imposed on the deep level centers so that the solar cell efficiency will not be seriously deteriorated , that is , no obvious peaks should be allowed to appear in the DLTS spectrum .

硅材料作为锂离子电池负极材料其理论比容量高达4200mAhg-1，但在充放电过程中，其会发生巨大的体积膨胀和收缩，从而阻止了实用化进程。

The theoretical capacity of silicon anode material of lithium-ion battery is up to 4200 mAh g-1 . However , this material undergoes the pulverization arising from its volume expansion and contraction during lithium insertion and extraction , which greatly hinders its commercial application .

多晶硅（p-Si）材料与非晶硅材料相比较具有迁移率高、易于掺杂、适用于周边驱动电路集成等特点，已成为TFT器件材料新的研究方向。

Comparing to a-Si material , polycrystalline silicon ( p-Si ) material has higher mobility and is prone to be adulterated , and it is fit for making peripheral integrated chip . Owing to those merits , p-Si has become a new material of TFT to be researched .

在激光波长1.06μm、能量15mJ、光斑直径2mm、脉冲半峰全宽约10ns和入射方向为布儒斯特角的条件下，进行了脉冲激光辐照硅材料形成表面波纹的实验研究。

Experimental research on the surface ripple with Si material irradiated by pulsed laser , is carried out with 1.06 μ m laser wave length , 15 mJ energy , 2 mm spot diameter , about 10 ns pulse width and Brewster angle incidence .

化学在半导体硅材料制造业的作用与展望

Application of Chemistry in Semiconductor Silicon Material Manufacturing and Its Prospects

氧化硅材料光活性缺陷中心研究进展

Progress in studies on the optically active defect center in silica

环境湿度下硅材料表面的黏着与黏滑机理

Pull-off Force and Stick-Slip Properties of Silicon Surface Under Environmental Humidity

铜银改性六方介孔硅材料的结构及抗菌性能

Structure and antibacterial ability of copper / silver-modified hexagonal mesoporous silica

强激光辐照下硅材料的温度分布研究

Study of Thermal Distribution of Silicon Materials Irradiated by High Power Laser

高压低温制备硅材料的性能研究

Study on performance of silicon material prepared by high pressure low temperature

多层复合结构应变硅材料的生长和特性

The growth and quality evaluation of strained Si material with multilayer structure

温度对氮化硅材料动态疲劳特性的影响

Effect of Temperature on Dynamic Fatigue Behaviour of Si_3N_4 Material

强激光辐照硅材料等离子体机理研究

Study on the Mechanism of the Si Plasma Induced by High-Energy Laser

同时还尝试了介孔氧化硅材料在分离方面应用的研究。

Meanwhile , the application of mesoporous materials in separation is attempted .