硅晶

硅晶微显示屏幕本身并不能发光，故需要依赖外来光源。

LCoS panel itself could not emit light , so it needs to rely on external light source .

激光烧蚀制备掺铒纳米硅晶薄膜形貌研究

Morphology of Er-Doped Nanocrystalline Silicon Films Fabricated by Pulsed Laser Ablation

采用S-W势运用分子动力学方法对硅晶表面的熔化及α-Si／Si薄膜的晶化进行了模拟。

C-Si surface melting and α - Si / Si film crystallization are simulated adopting Molecular-dynamics simulation method and S-W potential .

模拟结果表明：硅晶表面的熔化温度为1858K；

The results show : the melting temperature of c-Si surface is 1858K .

光电传感器在探测硅晶闸管扩展速度中的应用

Application of Optoelectronic Sensors to Probing the spreading Speed of Thyristors

锯片径向进给速度和硅晶棒直径对内圆锯切过程的影响。

The effect of feed speed and the crystal diameter .

硅晶闸管烧结应力的红外光弹性研究

Infrared photoelastic research of sintering stress in silicon thyristor

现在人们能够生产一种硅晶薄片。

Now people can produce a wafer silicon .

这些硅晶开关比用于早期电路的真空管要小得多。

These silicon switches were much smaller than the vacuum tubes used in early circuitry .

硅晶闸管瞬态导通扩展红外观测仪的研制及应用

The Development and Applications of An Infrared Instrument for Observing Transient Current Spreading in Turn-on Process of Thyristors

观察硅晶闸管瞬态导通过程的红外图象，是检测电力半导体特性的极为有用的方法。

Observing the infrared image of transient current spreading in turn-on process is a useful method to characterize power semi-conductor devices .

请设计一个硅晶基因克隆实验，从其他植物（如玉米，水稻）找出它的同种异体基因。

Please design a gene cloning in silico process for its homologous genes from other plants ( such as maize , rice ) .

中等凝固速度下的硅晶核具有由{100}和{111}面共同围成的复杂形态。

Under medium rate , the shape of silicon nuclear is the complicated morphology encircled by both { 111 } and { 100 } .

除了生产线和硅晶技术的进步之外，微处理器最近已经在制图板技术进步方面受益匪浅。

In addition to progress made on the production line and in silicon technology , microprocessors have benefited from recent gains on the drawing board .

常规硅晶切割废砂浆的回收方法受制于酸碱等化学品的影响，会对环境造成严重的污染。

Under the control of the influence of acid and alkali , conventional silicon cutting waste recycling methods of slurry cause serious pollution to the environment .

诺伊斯当时意识到，单个硅晶上不仅可以刻下晶体管，还可以容纳电容和电阻，即一个完整的电路。

Mr Noyce realised it would be possible for not just the transistor but capacitors and resistors an entire circuit to be etched on a single silicon crystal .

本课题在原工艺生产的基础上，提出了以水力旋流器为基础的物理分离方法，并围绕旋流器开发了硅晶切割砂绿色再生工艺装备。

This paper put forward the physical separation method of hydrocyclone on the basis of the original process and developed a silicon cutting sand green renewable process equipment .

选择拜耳法末次赤泥、溶出赤泥及活化赤泥作为脱硅晶种，研究了常压下粗液成分、晶种类型及晶种添加量对脱硅过程的影响规律。

The effect of pregnant liquor composition , seed type and seed addition on desilication process under normal pressure is studied , the seed includes the last red mud , digestion red mud and activated red mud .

由8051CPU产生三相交流调频控制信号，经放大来控制逆变主桥路中可控硅晶闸管的通断，从而实现恒压调速。

Three - phase alternating frequency modulation control signal produced by 8051 CPU is magnified to control the switch of the silicon controlled rectifier in inverse main bridge circuit , thereby constant pressure speed - adjusting is realized .

铝&硅共晶活塞合金的Na、P变质

Na or P Modification of Eutectic Al-Si Piston Alloys

含La铝硅共晶强制性非稳态生长互联互通的强制性

Unsteady-state growth of Al-Si Eutectic containing lanthanum under constrained condition

用于MEMS器件的单面溅金硅共晶键合技术

Au - Si Eutectic Bonding Technology for MEMS Device

利用SEM对加锑变质的铝硅共晶合金的金相及深蚀试样进行观察。

Microstructures of Si-eutectic in Al-Si eutectic alloys modified with Sb were investigated by means of SEM .

采用sol-gel旋涂法在抛光硅111晶面生长了高度C轴取向的ZnO薄膜。

ZnO thin films with high c-axis orientation were prepared on polished Si 111 substrates by using spin coating method .

分析认为，整流效应来自于生长的GaN纳米颗粒与衬底Si-NPA中存在的硅纳米晶颗粒之间形成的异质结。

After analysis , we thought that the rectification properties were from the heterojunction formed by GaN nanoparticles and silicon nanocrystals existed in substrate Si-NPA .

金硅共晶键合在微机械Golay-cell红外探测器中的应用

Au / Si Eutectic Bonding Application for Micromachining Golay-cell Infrared Detector

本文采用RTCVD法制备硅籽晶层，然后通过ZMR增大籽晶层晶粒，再用RTCVD外延多晶硅活性层。

In this paper , RTCVD method is used not only to prepare silicon seeding layer , which is treated following by ZMR to enlarge the grain size , but also to grow the polycrystalline silicon film as active layer .

来源于原料与硅砖的富硅析晶

Crystallization of Silica - rich From Raw Materials And Silica Brick

钛硅共晶合金中硅化物及其对显微硬度的影响

Silicide in Ti-Si Eutectic Alloys and its Effect on Alloy Microhardness

二氧化硅基质包埋硅纳米晶的微观结构和发光性能

Microstructure and optical properties of Si nanocrystals embedded in SiO_2 film