真空度

工程实践表明，充液会引起储罐夹层真空度发生变化，进而影响到低温储罐的绝热性能。

Engineering practice shows that liquid filling could cause the change of the interspace vacuum degree and affect insulation property of the cryogenic tank .

高真空度、原材料成分的纯度是ZrAlCuNi合金形成玻璃态的重要因素；

High vacuum degree and purity of materials are important factors for forming glasses for Zr-Al-Cu-Ni alloys .

装置真空度达到～10~（-1）Pa；

Its vacuum value amount to ~ 10 ~ 'Pa ;

磁控溅射TiO2膜的真空度对薄膜亲水性影响的实验研究

Oxygen Pressure and Hydrophilicity of TiO_2 Films Grown by Reactive Magnetron Sputtering

提高RH真空度的研究

The study of improving vacuum degree of RH

试验结果分析表明，真空度对蕨菜制品的维生素C含量影响最大，干燥温度次之，物料层厚度的影响最小。

Experimental results show that vacuum degree have greatest influence on the vitamin C content of Pteridium Aquilinum , then the drying temperature , least the material thickness .

用Ni基合金作钎料，在高真空度下将硬质合金颗粒焊至20Ni4Mo表面。

Using the Nickel base metal as solder , the hard alloy was welled on the 20 Ni 4 Mo in fine vacuum .

织构CdS-Cu2S太阳电池光电性质与真空度的关系

A relationship of opto-electric properties for textured cds-cu_2s solar cells to vacuum

在场发射显示器（FED）中使用消气剂，是维持FED内部真空度的最主要的手段，对延长FED的工作寿命起着重要作用。

Getters play an important role in vacuum maintenance and in lengthening the life time of a field emission display ( FED ) device .

实践表明，△P测定仪各部分容积及水银压力计密封端的真空度对△P测值有较大影响，有时甚至因此测不出△P；

Ap measurements are considerably influenced by the volume of each part and the vacuum of the sealed mercury tube end of the Ap meter , insomuch that Ap measurements are in some cases unobtainable .

用钛升华泵提高BEPCⅡ同步辐射环真空度

Improving vacuum in BEPC ⅱ synchrotron radiation ring with titanium sublimation pump

同时，由于受蒸汽压力和干燥真空度等等多方面的影响，PID控制器的参数难于整定，经常产生很大的超调。

The tuning parameter of PID controller is quite difficult . Because of the main vapor pressure end the vacuum degree end so on , big overshoot is often produced .

采用反应磁控溅射的方法沉积碳化钛（TiC）膜层。随后在维持镀膜系统真空度的情况下，利用等离子体分解结合高能离子轰击的方法不间断地连续制备i－C类金刚石薄膜。

The TiC film was prepared by a magnetron controlled reactive sputtering unit and then the I - C film was uninterruptedly prepared by means of plasma decomposition combined with high energy ion bombardment .

在真空度为133.3μPa时，用真空气相沉积方法在玻璃衬底上沉积SnO2薄膜。

The SnO 2 thin films have been obtained on glass substrate by using vacuum vapor deposition when the vacuum pressure is 133.3 μ Pa.

结果表明，真空度对SRRS效应的阈值传输距离和Stokes光的转换效率的影响较大，随着真空度的提高，Stokes光的转换效率将降低，产生SRRS效应的阈值传输距离将增大。

The Stokes conversion efficiency decreases and the propagation distance of the threshold increases with the increase of vacuum degree .

集成电路（IC）产业的快速发展对硅片传输机器人工作环境的洁净度及真空度提出了更高的要求。

Along with the rapid development of integrate circuit ( IC ), there is a high requirement of cleanliness and vacuum for the wafer processing environment , in which the wafer handling robot works .

Crookes辐射计内最佳真空度的实验和仿真研究

Experimental and simulative study on optimal vacuum pressure within Crookes radiometer

用该方法在不同的本底真空度下制备FeN薄膜，发现较高真空下比较低真空下制备的FeN薄膜磁学性能要好。

It is found that the magnetic properties of those prepared in high vacuum are much better than those of films prepared in low vacuum .

对比研究了在相同的真空度条件下纯Ti、纯Al、TiAl二元合金和TiAl-Nb三元合金PAM过程纽扣锭质量变化。结果表明，纯Al在PAM过程中质量随重熔次数的增加而递减。

The changes in button ingot mass of pure Ti , pure Al , TiAl binary alloy and TiAl-Nb ternary alloy after PAM have been observed with the same vacuum degrees .

通过测量在不同真空度中的室温光电压谱，发现AlGaAs／GaAs多量子阱的光电压对真空度很敏感。

In measuring the photovoltage spectra at room temperature in different vacua , it is found that the photovoltage of AlGaAs / GaAs multiple quantum wells is very sensitive to vacua .

动态偏压与真空度对真空电弧沉积Ti-N涂层组织与性能的影响

Effect of Dynamic Bias Voltage and Vacuum on Microstructure and Properties of Ti-N Coatings Deposited by Vacuum Arc

研究了离子加速管的封装工艺，研制的加速管真空度为6×10~（-5）Pa，平行度为0.1mm，相邻电极之间耐压均达到18kV／cm以上；

The assembling and sealing technological process of ion accelerating tube is studied . The vacuum of the debugged tube is 6 × 10 ~ ( - 5 ) Pa ;

用正交法研究，得出最佳条件：温度140℃、真空度0.03MPa（绝压0.071MPa）、KOH质量浓度2%、时间1.5hr。

The optimized conditions are that temperature is 140 , mass percentage of solid potassium hydroxide is 2 % , vacuum is 0.03 MPa , reaction time is 1.5 hours .

在85kPa膜下真空度的情况下，1m厚渗透系数小于10-6cm/s的淤泥搅拌墙满足气密性的持久性要求。

And it was concluded that mixing silt wall with breadth 1m and permeability less than 10-6cm / s met the need of the airtight capacity under vacuum of 85 kPa .

研究了不同涂层材料及组成对医用X射线管工作时的散热能力、管内真空度及涂层高温稳定性的影响，提出了一种最佳的涂层材料及组成

This paper discussed the result that different material and constitution influence heat sinking capability and vacuum degree of tube and high temperature stability of blackened film when X ray tube is working , and give a proposal of best material and constitution of blackened film

系统采用集散式计算机控制方式，控制策略采用两级Bang-Bang准最优结合模糊PID的控制方法控制温度和真空度。实践证明该系统控制效果良好，有应用推广价值。

The centralized-distributed computer control system adopts the control strategy of a combination of fuzzy PID and Bang-Bang sub-optimum method to control temperature and vacuum degree , which has proved to be effective and have a bright prospect .

MBE阴极激活结果受系统真空度条件影响较大，因此对MBE变掺杂光阴极的制备工艺应随系统真空度条件不同而调整。

The activation results of MBE GaAs photocathode are strongly affected by the system vacuum pressure , and with which the preparing technique of MBE varied doped photocathode should be adjusted along .

在380℃，6×10-4Pa真空度下，蒸馏分离基体钠，蒸馏后溶解残渣中的钙并在电感耦合等离子原子发射光谱仪（ICP-AES）上分析。

The matrix sodium is separated by vacuum distillation at the temperature of 380 ℃ and under the vacuum of 6 × 10 ~ ( - 4 ) Pa. The calcium in residue is dissolved and analyzed by ICP-AES .

应用FLUENT软件对其进行气液两相流的数值模拟，分析射流器主要结构参数对吸气室真空度的影响，对其结构进行优化设计。

Utilizing the software FLUENT to simulate the new jet with the gas-liquid two phase flow model , the influences of the main structural parameters on the vacuum in the internal suction volume were analyzed , and structure was optimal designed .

通过实验初步验证了模拟结果的准确性，分析了毛细孔尺寸对腔体和烘箱真空度的影响，实现了MEMS器件真空封装工艺的参数化建模与模拟和仿真优化设计。

The veracity of the simulation results is validated by experiments and the effect of the size of capillary hole on vacuum degree is analyzed . The parametrical modeling , simulation , and optimization design of vacuum package process of MEMS devices are realized .