界面态

MOS结构热载流子注入感生界面态及其退火特性

Hot-carrier injection induced interface states in MOS structure and their annealing characteristics

实验结果说明辐照感生界面态在MOS电容的平带电压漂移中起重要作用。

The experimental results indicate that radiation induced interface states play an important role in flatband voltage shift of MOS capacitors .

固体C（70）/GaAs接触的界面态及整流特性

Interface states and rectification of solid C _ ( 70 ) / GaAs contacts

但在100℃温度场中，两种偏置条件都有利于p沟器件氧化物陷阱电荷和界面态的退火。

Both two kinds of conditions are helpful to annealing of oxide traps and interface traps for p-MOS .

Si／SiO2界面态的俘获截面及态密度的能量分布

Capture Cross Sections and Energy Distribution of Si / SiO_2 Interface States

PIN型非晶硅太阳电池界面态对电池性能的影响

The influence of interface state on the characters of PIN-type amorphous silicon solar cells

MOS系统界面态密度分布的一种直接显示法

A Direct Display Method for Measuring MOS Interface State Density Distribution

研究了SiC表面氢化降低界面态密度的机理。

The mechanism of lowering the density of interface states due to hydrogenating SiC surface was studied .

SiO2-InPMIS结构的界面态和体深能级的研究

Study of interface states and bulk trap levels in the sio_2-inp MIS structure

~（60）CO－γ辐照感生Si／SiO2慢界面态及其对高频C－V测试的影响

￣( 60 ) Co - γ Radiation-Induced Slow Traps in MOS Structures and Their Influence on High Frequency C-V Measurement

MOS器件界面态与陷阱电荷分离方法研究

Oxide-trap and Interface-trap Charge Separation Analysis Techniques on MOSFET

应用Gray&Brown法研究MOS电容辐射感生界面态密度

A Study of Radiation Induced Interface State in MOS Capacitors by Gray-Brown Method

硅棚MOS结构的辐射感生界面态

Radiation-Induced Interface State of Silicon Gate MOS Structure

MOS结构中的两类慢界面态

Two Species of Slow Traps in MOS Structures

MOS结构Si/SiO2界面态的电荷泵测量

New Charge Pumping Technique of Measuring Si / SiO_2 Interface States in MOS Devices

界面态电荷对n沟6H-SiCMOSFET场效应迁移率的影响

Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET

MOS界面态电荷瞬态谱方法

MOS Interface State Charge Transient Spectroscopy

模型以氢钝化SiC表面悬挂键，降低SiC表面的界面态密度，消除了费米能级钉扎，获得理想的SiC表面。

The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface .

采用二维有限元数值分析的方法，开发了用于反向偏置p－n结分析的模拟软件，可以模拟与MOS型功率器件反向耐压有关的终端浅结场环、场板、SiO2介质及界面态。

By using two-dimensional finite-element numerical analysis , we develop a computer simulation program used for terminal field calculation of reverse biased p-n junctions .

强脉冲X射线辐照在Si-SiO2中感生的界面态及退火消除

Radiation-induced interface states of Si-SiO_2 by intense pulse X-ray and their annealing

HEMT及其界面态效应的二维数值模拟

Two-Dimensional Numerical Simulation of HEMT and Interface States Effect on HEMT

证实了GaN肖特基势垒光敏器件的辐照失效与界面态有关，而不是由GaN体材料中的缺陷导致的。

The reason that the irradiation induced failure of GaN devices was due to the damage of Au / GaN Schottky interface .

从理论上计算出GaAs/Si异质结在Si的（211）面上界面态密度最小，故GaAs在Si（211）面上生长晶格失配度较小。

The paper in the theory have been calculated GaAs / Si heterostructures epitaxy on ( 211 ) Si crystal plane , which density is smaller than other .

界面态对AlGaAs/GaAsHEMT直流输出特性的影响

Influence of Interface States on Characteristics of AlGaAs / GaAs HEMT Direct Current Output

最后在n型SiC不同光波段的C-V光照实验研究中，我们发现不同频率光波的光照的得出的C-V曲线界面态台阶不相同，该结果说明利用不同单色光波可以得到界面态分布的信息。

Finally , different wavelengths of light-wave were applied to the photo-excited C-V , which indicated that the information of interface states could be obtained .

并针对SiC的电学和物理特性，通过对SiMOS电容测量方法进行修正，测量了SiCMOS界面态密度和边界陷阱密度。

Interface-state density and border trap density for SiC MOS devices are measured by modifying measurement methods for Si MOS devices and considering electrical and physical properties of SiC .

在异质结样品中观察到了载流子从Mg（0.12）Zn（0.88）O盖层向ZnO层注入的过程，这归结为样品中存在着与界面态相关的局域激子。

We observed a process of the carrier injection from Mg_ ( 0.12 ) Zn_ ( 0.88 ) O capping layer to ZnO layer which attributed to the existent of interface potential barrier .

MOS电离辐照感生Si-SiO2界面态及其密度的能级分布

Y-ray irradiation-induced Si-SiO_2 interfacial state and its energy level distribution of its density in MOS structure

应用DLTS技术研究磷处理对Si&SiO2界面态的影响

A study of the effect of the phosphorus soaking on si-sio_2 interface state by DLTS

表现为在同样辐照偏置下注F1器件比未注F1器件的阈电压漂移小，辐照后退火期间的界面态、氧化物电荷变化稳定。

And , reliability of the F + implanted devices was verified by smooth changes of both interface state charge and oxide state charge during the annealing .