掺杂技术

  • 网络Doping technology;Dopping
掺杂技术掺杂技术
  1. 针对制造高压晶闸管p型杂质扩散工艺的不足,进行了开管式受主双质掺杂技术的研究。

    The research of open-tube double acceptor mixing technique is carried out to overcome the disadvantage of manufacturing high-voltage thyristor p type impurity diffusion technique .

  2. 为了实现ZnO的实际应用,必须通过掺杂技术来调控ZnO的物理性质。

    Doping technique is used to adjust the physical properties of ZnO for its practical application .

  3. 报道了利用直流反应磁控溅射以Al,N共掺杂技术生长p型ZnO薄膜。

    The p-type ZnO films with c - axis orientation are fabricated using Al and N codoping method by DC reactive magnetron sputtering .

  4. 利用SIMS和变温霍尔测量手段对p型Hg0.77Cd0.23Te液相外延材料的Ag掺杂技术、机理及掺杂碲镉汞材料的性能进行了研究。

    SIMS ( secondary ion mass spectrum ) and variable temperature Hall measurement were employed to study the doping of Ag and the electrical properties of Ag doped HgCdTe films grown by LPE .

  5. 其中重点总结Li(1+x)V3O8正极材料的制备技术,包括高温固相合成技术、低温合成技术和掺杂技术。

    The synthetic processes of Li1 + xV3O8 cathode material are discussed in details , which include high temperature solid state synthetic methods , low temperature synthetic methods and doping techniques .

  6. 为了满足一定的击穿电压,薄膜SOI高压电路一般采用漂移区线性掺杂技术,但其工艺复杂,且自热效应严重;

    For thin-film SOI-HVIC , linear drift region doping profile is adopted to satisfy a certain breakdown-voltage , but this process is too complex and its self-heating effect is obvious ;

  7. 以废弃蛋壳为原料、尿素为添加剂,采用掺杂技术制备碳羟磷灰石(CHAP),并用其作吸附剂去除水中的Cu2+。

    Carbonate hydroxylapatite ( CHAP ) was prepared by doping technology using abandoned eggshell as material and urea as additive . The product was used as adsorbent to remove Cu ~ 2 + from water .

  8. 研究了变掺杂技术应用于透射式GaAs光电阴极的可行性,发现阴极组件制备过程不会破坏阴极的变掺杂结构,而且变掺杂的透射式GaAs光电阴极具有较高的光谱积分灵敏度。

    The feasibility of varied doping technology applied to transmission-mode GaAs photocathode was researched , and it was found that the preparation of transmission-mode cathode component will not destroy the varied doping structure , and the varied dopped transmission-mode GaAs photocathodes have high integral sensitivity .

  9. 文中主要介绍了用MCVD工艺结合溶液掺杂技术制备铒镱共掺双包层光纤的设计、制作及性能。

    The design , fabrication and properties of the ytterbium-erbium co-doped double-cladding fiber are reported , which is made by method of a combination of the MCVD and solution doping technique .

  10. 用一种新的液相掺杂技术制备Y2O3掺杂的ZrO2纳米粉体。

    A novel technique was described for the preparation of Y 2O 3 liquid doped ZrO 2 nano_powders from a suspension of alumin_ ium nitrate , yttrium nitrate and ZrO 2 powder in an alcohol / water mixture .

  11. 描述用液相掺杂技术研制掺Tm3+石英光纤并实现其相关参数的控制,并对掺Tm3+浓度及其测量方法进行了讨论。

    The preparation of silica optical fibers doped with rare earth ion Tm 3 + utilizing a solution doped technique and the control of relevant parameters of the fibers are described . The control and the measurement method of the doping concentration of Tm 3 + have also been discussed .

  12. 利用离子掺杂技术制备了铁改性钛层柱粘土。

    The Fe-exchange Ti-pillared clays were synthesized by cation doping techniques .

  13. 惯性约束聚变靶材料掺杂技术综述

    The doping techniques of inertial confinement fusion target materials

  14. 重点研究了低发射率颜料、相变微胶囊及半导体掺杂技术在涂料复合中的应用。

    Low emissivity pigment , microcapsule PCM and semiconductor material-mix technology were studied .

  15. 本文研究了紫外光敏光纤的制备工艺及光纤性能。通过氢敏化及锗硼共掺杂技术提高了光纤光敏性。

    This paper studied on the process of fabricating optical-sensitive UV-fiber and its increased .

  16. 本文介绍用激光掺杂技术在高阻硅中掺入杂质来制造核辐射结型探测器的方法。

    In this paper fabrication of nuclear radiation detectors by using laser-doping technique is reported .

  17. 金属钼的合金化和掺杂技术

    Alloying and doping technology of molybdenum

  18. 单晶硅中子嬗变掺杂技术

    Neutron transmutation doping of monocrystalline silicon

  19. 为了改善其光学性质,稀土掺杂技术被广泛的研究和应用。

    To improve its luminescence properties , doping Re3 + to the crystals have been extensively studied .

  20. 概括了功能梯度薄膜制备中的掺杂技术并给出了脉冲激光沉积功能梯度薄膜的模型;

    The application and the latest progress of pulsed laser deposition the function gradient thin film is discussed .

  21. 利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP异质结结构。

    The InGaAsP / InP hetero-junction structure has been fabricated by using liquid phase epitaxy process with a specific doping technique .

  22. 浅电子陷阱技术是掺杂技术的一个分支,近年来有关它的研究和应用又开始受到人们的重视。

    Shallow electron trap technology is one part of doping technology , the research and application of shallow electron trap has become important in recent years .

  23. 实验研究了电子束辐照诱导半导体掺杂技术制作的浅结硅光伏电池光响应特性。

    The optical response in a shallow junction silicon photronics , which made by the semiconductor doping technique with the electron beam radiation , are investigated experimentally .

  24. 本文讨论了高速双极器件制造中的离子注入技术。重点讨论在双极器件制造工艺中的离子注入掺杂技术,离子注入形成浅结技术,以及离子注入层的退火技术。

    Ion implantation technique for the fabrication of very high-speed bipolar circuits is discussed in the paper , with emphasis on the ion implantation doping and shallow junction formation and the annealing of the implanted layer in bipolar device process .

  25. 纳米CMOS器件中超浅结离子掺杂新技术

    Several New Ion Beam Doping Technologies of Ultra-Shallow Junction for Nanometer CMOS Fabrication

  26. 纳米MOS器件中的超浅结和相关离子掺杂新技术的发展

    Ultra-shallow Junction Used in Nano Devices and Development of Related Ion-doping Techniques

  27. 高压大电流晶闸管受主双质掺杂新技术的研究

    Research of New Acceptor Double Dope Technology for High-Voltage Large-Current Thyristor

  28. 送粉激光熔覆陶瓷掺杂复合涂层技术及涂层成形机理研究

    Study on Technique of Powder-Feeding Laser Cladding Adulterating Composite Coating with Ceramic and Forming Mechanism of Coating

  29. 纳米粉体制备和掺杂改性技术的应用为压电陶瓷材料的性能改进提供了一条新的途径。

    The application of preparing technology of nanopowder and doping modification process provided a new approach for the improvement of properties of piezoelectric ceramics .

  30. 本文介绍了目前常用的掺杂方法、技术水平及金刚石半导体的应用前景。

    The current status and technology of diamond doping ( including CVD method and ion implantation ) are reviewed and the prospect of diamond semiconductor is presented .