热载流子效应

小尺寸MOS器件热载流子效应模拟

The simulation of hot carrier effect in small geometry MOSFET

MOSFET中热载流子效应的计算、实验和模拟

Calculation , Experience and Simulation of Hot carrier Effect in MOSFET ′ s

研究了用注F工艺制作的短沟MOSFET的热载流子效应。

Hot carrier effects in fluorinated short channel MOSFET have been investigated .

注F短沟MOSFET的沟道热载流子效应

Channel Hot-Carrier Effects in Fluorinated Short-Channel MOSFET

深亚微米SOIMOSFET低压热载流子效应研究

Hot-Carrier Effects in Deep Submicron N - and P-Channel SOI MOSFET 's

动态应力下MOS器件热载流子效应研究

Study on Hot-carrier Effects in MOSFET under Dynamic Stress

热载流子效应是影响MOS器件与电路可靠性的主要因素。

Hot-carrier effect is a major reliability failure mechanism of MOS devices andcircuits .

MOSFET噪声与热载流子效应研究

Research on MOSFET Noise and Hot Carrier Effect

MOS器件的热载流子效应

Hot Carriers Effect of MOS Devices

SiGeHBT的热载流子效应评价

Evaluation of Hot Carrier Effect of SiGe HBT

多晶硅TFT热载流子效应的模拟研究

A Study of Hot Carrier Effects on Polysilicon Thin Film Transistors by Simulation

近年来，MOS器件热载流子效应的研究已成为CMOS可靠性问题的重要研究课题。

Recently , the research of hot-carrier effect on MOS device is becoming a very important subject on CMOS reliability analysis .

脉冲应力增强的NMOSFET′s热载流子效应研究

Study on Pulse Stress Enhanced Hot-Carrier Effects in NMOSFET ′ s

首先，本文对超大规模集成电路中MOS器件尺寸缩小的限制及相应的可靠性问题进行了分析，特别是对小尺寸MOSFET的热载流子效应进行了较详细的讨论；

First , the scaling limitation and relative reliability problems are analyzed for MOSFET in VLSI , especially for hot-carrier effects of small dimension MOSFET .

影响CMOS电路热载流子效应的因素有：晶体管的几何尺寸、开关频率、负载电容、输入速率以及晶体管在电路中的位置。

Factors leading to hot-carrier effects in CMOS IC 's include transistor size , switching frequency , load capacitance , input rate and the location of transistors in the IC .

本文重点介绍了0.8μmPDSOIMOS器件的结构、KINK效应、热载流子效应和自加热效应等，并对这些特性从物理机理上进行了简要的阐述。

This article introduces 0.8 μ m PD SOI MOS device structure , kink effect , hot-carrier effect and self-heating effect , and gives their physics explanation briefly .

对深亚微米器件中热载流子效应（HCE）进行了研究。

The hot carrier effects ( HCE ) in deep sub - micron devices has been studied .

热载流子效应对n-MOSFETs可靠性的影响

Influence of Hot - Carrier - Effect on Reliability of n-MOSFETs

指出热载流子效应引起载流子陷落和界面态的产生，导致C&V特性曲线畸变、平带电压漂移和恒定电压下SiO2漏电流随时间漂移。

The trapped charges and generated interface states caused by hot carrier effect lead to curve distortion of C-V characteristics , flatband voltage shift and SiO2 leakage current shift with time under constant voltage .

研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。

The hot carrier effects ( HCE ) in MOSFET are studied in this paper . Based on MOSFET lifetime model of direct current , we present MOSFET lifetime model of dynamic stress .

本文从实用的角度出发求解泊松方程.提出了一个小尺寸MOS器件热载流子效应的模拟方法。

For practical use , a simulation method of hot carrier effect in the small geometry MOSFET is proposed by the direct solution of the Poisson equation and a corresponding software is developed in this paper .

研究热载流子效应对不同的沟道长度n-MOSFETs退化特性的影响。

Influence of hot-carrier-effect on degradation characteristics of different channel length n-MOSFETs have been investigated .

热载流子效应（HCE）、电介质击穿、静电放电，以及电迁移等失效机理，已经对VLSI电路的长期可靠性造成了极大的威胁。

Failure mechanisms , such as hot-carrier effect ( HCE ), dielectric breakdown , electro-static discharge ( ESD ) and electromigration , pose serious threat to the long-term reliability of VLSI circuits .

本文论述了MOSVLSI主要失效机理，即薄氧化层击穿、热载流子效应、铝－硅接触失效、电迁移以及软错误，并给出了预防上述失效的一些技术措施。

This paper describes main failure mechanism for MOS VLSI , Thin oxide breakdown , hot carrier effect , Al - Si contact failure , electromigration and soft errors . It gives out some technical measures to prevent above-mentioned failures .

亚微米MOSFET的热载流子效应会引起器件的失效，文中分析了热载流子效应引起器件失效的机理和物理模型，对该效应的内部电场、衬底电流、阈值电压和跨导作了计算；

Hot carrier effect in submicrometer MOSFET ′ s would cause device failure . This paper analyses the failure mechanism and physical model of this effect . Theoretical calculations include internal electric field , substrate current , shift of threshold voltage and transconductance .

首先，本课题讨论了阈值电压的短沟/窄沟效应、穿通效应和热载流子效应（HCE）等诸多小尺寸效应；

Firstly , the thesis discusses some small size effects , such as short-channel and narrow-channel effects for threshold voltage , punchthrough effect and hot carrier effect ( HCE ), etc.

本文研究了交流应力下的热载流子效应，主要讨论了脉冲应力条件下的热空穴热电子交替注入对NMOSFET′s的退化产生的影响。

Hot carrier effects under AC ( Alternating Current ) stress are investigated in this paper . Alternative hot hole and hot electron injection effects on the degradation of NMOSFET ′ s under pulse stress are discussed mainly .

高压P-LDMOS的失效实验分析表明其沟道区的高峰值电场会导致沟道区的热载流子效应，从而将降低高压P-LDMOS的可靠性。

The failure experiments of the P-LDMOS ( lateral double diffused metal oxide semiconductor ) demonstrate that the high peak electrical fields in the channel region of high-voltage P-LDMOS will reinforce the hot-carrier effect , which can greatly reduce the reliability of the P-LDMOS .

本文给出了LADES7软件模拟的部分结果，并着重讨论了热载流子效应产生的栅电流。

The gate current produced by hot carriers are discussed in detail .

此外，漏端的电场峰值降低，有利于降低热载流子效应。

Besides , the field peak near the drain decreases which improves the hot-carrier-effect .