热电子发射

该模型具有更大的普适性、更适合工作在高场条件下的SiC材料，并且能够连续的计算热电子发射电流和隧穿电流。（2）SiC肖特基势垒源漏MOSFET的理论模型研究。

The proposed model has the advantages of more universality , more suitability for SiC in high-field application and seamless calculation of thermionic emission and tunneling current . ( 2 ) The study on the theoretical model of SiC SBSD-MOSFET .

结果显示该方法比WKB近似更精确，同时也更适合工作在高场条件下的SiC材料，并且能够连续地计算热电子发射电流和隧穿电流。

The simulation results show that the proposed method has the advantages of greater accuracy and adaptability to SiC Schottky contacts in high fields over the WKB approximation . It also can seamlessly treat thermionic emission and tunneling current .

Mo-Y2O3阴极的热电子发射性能

Thermionic Emission Properties of Mo-Y_2O_3 Cathode

基于CPLD的场助热电子发射静态显示驱动系统

The Static Multi-Gray Drive Circuit System of Field Assistant Hot Electron Display Based on CPLD

文章也分析了TCO膜的热电子发射对电池饱和电流的影响。

The effect of thermal emission of TCO on cells performance is also analysed .

最后，我们的模拟发现，普通SOI结构SBSD-MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。

Finally , our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current , but it still can not suppress tunneling leakage current .

当La2O3含量在6%～8%时，其热电子发射能力和稳定性最好。

The nanocrystalline electrode materials exhibit the best thermionic electron-emission and stability when the content of La_2O_3 is 6 % ~ 8 % .

利用脉冲激光沉积在不同真空度下制备了不同La/O的La-Mo薄膜阴极，测量其发射性能并进行了原位AES分析，讨论了氧在镧钼阴极热电子发射中的作用。

Different atomic ratio La / O film cathodes were prepared by pulsed laser deposition under various vacuum conditions . The emission properties were measured and their surface composition was investigated with in situ AES analyses .

激活过程促使La，O离子的价电子态密度增加，配位不饱和的La离子外层6s高能价电子易形成电子发射，即这一变化过程对热电子发射具有积极作用。

The density of state of valence electron of La and O ions increase during activation processes . The 6s higher energy valence electrons of La ions with unsaturated coordination number is easy to emit . It is clear that the processes is beneficial to thermionic emission .

分析了金属绝缘体SiC（MISiC）结构肖特基二极管（SBD）气体传感器敏感机理，通过将热电子发射理论与隧道理论结合，建立了器件物理模型。

The sensitive mechanisms of gas sensors with a structure of metal insulator silicon carbide ( MISiC ) Schottky diode are analyzed . A physical model for the device is developed by combining thermal electron emission theory with tunnel theory .

论热电子发射中发射电流与两极间电压之间的关系

The Relationship between Emission Current and Interelectrode Voltage in Thermoelectron Emission

面源灯丝的热电子发射电流密度和均匀性分析

Area Source Filament Thermion Emission Flow Density And Uniformity Analysis

大屏幕场助热电子发射平板显示

Field - Assistant Hot Electron Emission Display with Large Screen

这直接影响到材料的加工性能及热电子发射性能。

That directly influence on processing property and transmit property of heated electrons .

热电子发射维持的磁约束电子云

The Magnetically Confined Electron Cloud Sustained by Thermionic Emission

10英寸场助热电子发射显示屏的制作

Fabrication of 10 Inch Field Assistant Hot-Electron Emission Display

稀土钼/钨热电子发射材料显微结构及其性能表征

Microstructure and Electron Emission Performance of RE-Mo / W Thermionic Electron Emission Materials

基于异质结结构热电子发射的热电制冷，是近年来提出的一种高效制冷方法。

The thermionic emission cooling employing hetero structure is a high efficient cooling method .

关于热电子发射理论的评述（Ⅲ）&动态表面发射中心

On the theory of thermionic emission (ⅲ) a model of dynamical surface emission centers

阴极区热电子发射的数值模拟

Numerical simulation for thermal emission of cathode

材料的功函数对其热电子发射或场电子发射都有决定性的影响。

Work function of any material significantly affects its thermal electron emission and field emission .

钨热电子发射材料的研究进展

Advances in Research on Tungsten Cathode Materials

根据热电子发射理论和电学性能计算了势垒结构。

Based on the thermoelectronic emission theory , barrier structure of samples was calculated by analyzing electrical properties of samples .

研究了近相对论强度的激光脉冲与薄膜靶相互作用中，靶厚度对超热电子发射方向的影响。

The effects of target thickness on emission directions of hot electrons are investigated in the interaction of subrelativistic intensity laser pulses with foil targets .

这些超热电子发射峰分别沿着激光反射方向、靶法线方向和激光背反射方向。

These emission peaks are located in the directions of the specular reflection of laser , the target normal and the back-reflection of laser respectively .

具有金属/绝缘层/半导体/金属结构的场助热电子发射阴极是大屏幕显示器中的主要候选部件。

The field assisted hot electron emission cathode with a metal / insulator / semiconductor / metal structure is a main candidate for large screen displays .

早期的热电子发射-吸收式热电装置的热流可由理查德森公式来描述，但是遇到当今热门的小尺寸装置，它就不适用了。

In early thermionic emission-absorption thermoelectric device , heat flow can be described by the Richardson formula , which is not applicable to the hot small-size devices nowadays .

本文把在金属-半导体接触中同时存在着扩散和热电子发射这样两种互相串联的电流传输机构这一看法推广到了异质结。

It has been accepted that in metal-semiconductor contacts exist two kinds of current transport mechanisms ( i.e. , diffusion and thermionic emission ) in series with each other .

结果表明，对于纳秒或亚纳秒脉冲激光，强吸收介质的热电子发射对电子雪崩电离过程有很大影响，等离子体光学击穿阈值随生物组织吸收的增加而降低；

Calculation results has shown that for nanosecond or subnanosecond laser pulses , initial heating electrons in strongly absorbing media contributes significantly to avalanche ionization and optical breakdown threshold decreases with increasing tissue absorbance ;

并以此为依据，从理论上分别分析和比较了多子漂移扩散、纯漂移和热电子发射电流机制所起的作用。

Accordingly , the I-V characteristics of N and P type DBRs due to three kinds of current mechanisms : the drift-diffusion , pure drift and thermionic emission currents , have been analyzed theoretically .