点缺陷

TFT-LCD点缺陷的分析与研究

Study and Analysis of Point Defect in TFT-LCD Process

He对低活性Fe-Cr-Mn（W，V）合金辐照产生点缺陷行为的影响

Effects of helium on behavior of point defect produced by irradiation in low activation fe-cr-mn ( w , v ) alloys

经检查，她的听力有点缺陷。

Her hearing was found to be slightly defective .

通过对江西修水、乐平二叠系&三叠系（以下简称P＼T）界线剖面与浙江长兴的P＼T界线剖面对比，表明浙江长兴P＼T界线剖面存在3点缺陷。

Profile correlation of Permian_Triassic boundaries between the Xiushui_ Leping area of Jiangxi and the Changxing area of Zhejiang has revealed three defects in the Changxing profile .

ZnO薄膜中的本征点缺陷对材料的电学、发光性能有着至关重要的影响。

The electrical and luminescent properties of ZnO thin film are strongly influenced by its intrinsic point defects .

采用波导法测量了点缺陷和线缺陷对二维负磁导率材料X波段（8&12GHz）微波透射行为的影响。

We use a rectangular waveguide system to measure the X_band transmission in 2D negative permeability materials with different dot and line defects .

以上结果表明，采用适当的温度退火能有效的减少SiC晶体的点缺陷。

These results suggest that the use of appropriate temperature annealing can effectively reduce the point defects in SiC crystals .

计算得到中性K空位的形成能为6.5eV，远小于间隙K原子点缺陷形成能13.07eV。

The formation energy of K vacancy was calculated to be about 6.5 eV and much lower than that of K interstitial ( 13.07 eV ) .

KDP晶体本征中性点缺陷的第一性研究

Research on the neutral native point defects in KDP crystals using first-principles theory

此外，点缺陷作为非辐射中心对ZnO薄膜的发光寿命有一定的影响。

In addition , the influences of point defects as the nonradiative centers on the luminescence lifetime of ZnO thin films are also reviewed .

对HDL、LDL腔内壁面浓度与硅片中空洞型微缺陷的消除同时受到间隙氧浓度和点缺陷密度的影响。

The annihilation of voids was controlled by both concentration of interstitial oxygen and density of point defects .

LCOSIC中金属点缺陷的形成机理及改善方法研究金属激光弯曲成形角度的随机变异性分析

LCOS IC Metal Pits Defect Mechanism and Improvement ; Stochastic Variability Analysis of Bending Angle in Sheet Metal Laser Forming Process

利用隧道电流对表面H原子的可控脱附，我们获得并研究了表面孤立的单个氧空位和OH基团这两种TiO2（110）表面最主要的点缺陷结构。

By selectively desorb the H atoms of surface OH groups , we obtained and investigated the isolated O vacancy and OH group on the TiO2 ( 110 ) surface .

金属间化合物Ni3Al点缺陷的理论计算

Theoretical calculation of point defects in ni_3al

比较了掺Fe和非掺退火半绝缘（SI）InP材料中Fe杂质的分布，掺杂激活机理以及Fe原子与点缺陷的相互作用。

The impurity distribution , doping activation mechanism , and interaction between Fe atoms and point defects in Fe-doped and annealed undoped semi-insulating ( SI ) InP materials are compared .

金属间化合物物理性能、点缺陷及扩散的改进分析型EAM模型研究

Study on the Physical Properties , Point Defects and Atomic Diffusion in Intermetallics by a Modified Analytic EAM Model

点缺陷和线缺陷SRR的引入导致材料主谐振峰的强度下降、谐振频率发生移动，品质因数Q显著下降。

The main resonance frequency has a shift and the resonant peak value decreases when the defect SRRs are introduced into the samples .

在萤石：Eu2+体系中对称程度较高的[011]方向发现Eu或F点缺陷，但其对发光体整体发光影响不大；

Eu and F I point-defects can be found in [ 011 ] direction of high symmetry in fluorite : Eu 2 + crystals . In general they have little affect on luminescent object .

本文总结了ZnO薄膜材料中可能存在的缺陷类型，并就点缺陷的性质及其对发光性能影响的研究现状做了重点评述。

In this paper we summarized the defect types that may exist in ZnO thin film and focused on the influences of point defects on the luminescence properties of ZnO thin films .

从减少ZnS粉末原料中存在的微量杂质入手，对黄点缺陷产生的原因和消除措施进行了探索。

This paper probes into the causes of the yellow spots and the methods of how to avoid from them studying the impurities of ZnS powder .

分析了带有点缺陷的二维正方晶格的TM模偏振的带隙分布，模拟了二维光子晶体缺陷态的分布。

We analyzed the photonic band gap for TM polarization of two-dimensional photonic crystal of square lattice with point defects and simulated the defect states of two-dimensional photonic crystal . 2 .

采用四亚点阵模型对Mg掺杂p-型GaN中掺杂Mg、H、点缺陷和载流子进行了热力学描述。

A thermodynamic modelling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects , dopants ( Mg and H ) and carriers ( free electrons and holes ) in GaN .

单晶硅中铒点缺陷及Er-O复合缺陷电子结构的EHMO计算

Calculation of Electronic Structures of Er Point Defects and Er O Complex Defects in Crystal Silicon with EHMO

其它杂质和点缺陷的形成与分布与该结构密切相关，并导致GaAs材料电学和光学特性的不均匀。

The formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non-uniformity distribution of electrical and optical characteristic of GaAs material .

在可见光范围内，空位点缺陷的存在不会影响LiF的高压光吸收性（吸收系数仍为零）。

( 2 ) The optical absorption of LiF in the visible-light region is not influenced by the vacancy point-defect ( absorption coefficients are still zero ) .

点缺陷形成能的分析结果表明：富Ru合金出现Ru反位缺陷，富Al合金出现Al反位缺陷。

By means of analysis of the point defect forming energy , it is found that the point defect in the rich-Ru alloy is mainly Ru antiposition , while in the rich-Al alloy Al antiposition .

为了得到TE，TM模式在完全禁带中具有相同共振频率的缺陷模，对中心点缺陷半径Rd以及中心附近对称位置的点缺陷半径Rn做了一系列微调。

In order to obtain a defect mode inside the complete band gap , we adjust the radius R d of the central defect and radius R n of the neighboring defects .

由于其良好的光电性能，可以广泛应用在室温紫外激光器，传感器和光催化等领域。ZnO中存在氧空位、锌间隙等诸多本征点缺陷，对ZnO进行掺杂是改进其性能的方法之一。

Due to its good optoelectronic properties , it can be widely applied in the fields of room-temperature ultraviolet lasing , sensor and photocatalysis etc. ZnO has many intrinsic point defects such as oxygen vacancy and zinc interstitial atom .

同时，分析了高浓度的点缺陷对CIO氧化物薄膜的能带结构产生的重要影响，这些影响主要体现在带尾的形成，Burstcin-Moss（B-M）漂移和带隙收缩。

At the same time , this dissertation formulated the effect of band-gap narrowing and Burstein-Moss ( B-M ) shift on optical band-gap .

本文还通过K－V符号和点缺陷理论来讨论金属氧化物的气敏机理，总结出了电导率随氧分压变化的一般规律，并研究了TiO2的表面反应。

In this paper , K-V symbol and point defects have been used to discuss the mechanism of gas-sensor of metal-oxide . With this theory , the common rule of the change in conductance with the oxygen concentration has been summarized .