激光放大器

高功率激光放大器B积分值的选取

Selection of the value of B integal for high power laser amplifier

湍流下运转的新型CWCO2单横模高功率激光放大器

New High Power TEM_ ( 00 ) CW CO_2 Laser Amplifier Operated by Turbulence Flow

高功率激光放大器中光束的成丝和B积分

Filamentation of Intense Laser Beam in High Power Laser and the B Integral

Nd∶YAG单程激光放大器的设计方法

Design methods for single pass Nd ∶ YAG laser amplifiers

低重复率的Ti：Al2O3飞秒激光放大器研究

Study on a compact femtosecond ti : al_2o_3 amplifier at low repetition rate

IL型半导体激光放大器的噪声

Noise in an injection locked semiconductor laser amplifier

高功率LD泵浦Nd：glass薄片激光放大器的研究

Study of High Power LD Pump Nd : Glass Thin Disk Laser Amplifier

大口径LD泵浦的激光放大器热沉积特性

Heat deposition in large-aperture diode-end-pumped laser amplifier

F-P半导体激光放大器弱信号机制下的增益特性研究

Study on gain characteristic of Fabry-Perot type semiconductor laser amplifier under weak signal regime

同时结合工程应用的特性，将研究结果直接运用到LD泵浦的高增益激光放大器系统结构设计中，并取得了良好的效果。

In engineering application , good effect was obtained by applying the results to the LD pumped high-gain amplification system .

Wiggler强度递减的自由电子激光放大器分析

Analysis of FEL Amplifier with Amplitude Tapered Wiggler Magnet

本文报导了用实验方法研究Fabry-Perot型GaAs-GaAlASDH半导体激光放大器的结果。

A Fabry-Perot type GaAs-GaAlAs DH Semiconductor Laser Amplifier is investigated experimentally .

利用直接耦合的激光器放大器对，观察了弱信号机制下Fabry-Perot的半导体激光放大器的光放大。

Amplification in Fabry-Perot type semiconductor laser amplifiers has been observed with a directly coupled laser-amplifier pair .

放电泵浦KrF激光放大器的高电压脉冲发生器

A high voltage pulse generator for exciting a discharge pumped KrF laser amplifier

介质参数对KrF激光放大器的影响

Influence of medium parameter on amplification of KrF laser

电子束激励KrF激光放大器稳定运行的重要技术问题

Important technological problems with stable operation of electron beam pumped KrF excimer laser amplifier

进行了单段钕玻璃激光放大器（SSA）的计算模拟。

A computational simulation of the single segment Nd ∶ glass amplifier ( SSA ) has been made .

描述了一台用于泵浦KrF激光放大器的可重复频率运行的高电压脉冲发生器。

A high voltage pulse generator capable of repetitive operation for exciting a KrF laser amplifier is described .

理论上建立了激光放大器的计算模型，分析了激光放大器的能量转换机理；并应用Matlab对普通条件及小信号条件下的放大增益特性进行了数值模拟计算。

Theoretically , the calculation model of the laser amplifier was built and the energy conversion of the laser amplifier was analyzed . The gain characteristic at conventional and small signal condition was simulated by Matlab software .

CVL横向泵浦的染料激光放大器中泵浦光纵向分布对效率的影响

Effect of longitudinal distribution of pumping beam on conversion efficiency in dye amplifier transversely pumped by CVL

在关于自聚焦的线性不稳定理论的基础上，Glass等人在高功率激光放大器中引入了分裂积分（B积分）作为一个重要参数。

Based on the theory by BecnaJlOB [ 1 ] with regard to linearity instability of self-focusing , Glass [ 2 ] and others introduced as an important parameter the breakup integal ( B integal ) in the design of high power laser amplifier .

利用铜蒸气激光器泵浦碰撞锁模染料激光放大器，获得2.4μJ，70fs低色散光脉冲，脉冲重复率为5kHz。

Low-dispersion pulses with a duration of 70 fs and energies of up 2 . 4 μ J were obtained from an amplifier pumped by a copper vapor laser at 5 kHz pulse repetition-rate .

本文分析了半导体激光放大器处于增益饱和状态下的自相位调制（SPM）效应，以及SPM效应对传输脉冲波形、相位及频谱的影响。

In this pager , the self-phase modulation effect in gain saturated semiconductor optical amplifier and its affect on the shape , phase and spectrum of transmission pulse are analyzed .

一种测量GaAs-GaAlAs行波激光放大器增益特性的实验方法

A new experimental method for measuring gain properties of GaAs GaAlAs traveling-wave laser amplifier

采用传输矩阵方法（TMM）对具有不同腔面反射率的半导体激光放大器的特性进行了分析。

Properties of semiconductor laser amplifier with different reflectivity are analyzed by means of transferring matrix method ( TMM ) .

文章推导了多层平板波导结构的半导体激光放大器（SLA）端面反射率的计算方法，为优化设计SLA端面增透膜参数提供了工具。

A method for calculating facet reflectivity of semiconductor laser amplifiers ( SLA ) with multilayer slab waveguide structure is derived , which provides a tool for optimizing antireflection coating parameters on SLA facets .

介绍一种实时监控行波半导体激光放大器（TW-SLA）抗反膜（AR）超低剩余反射率的新方法。

A new method of monitoring the in-situ extremely low residual reflectivity of antireflection ( AR ) coating of travelling-wave semiconductor laser amplifier ( TW-SLA ) is presented .

实验中对LDA及Nd：YLF棒进行了有效的温度控制，同时采取了精确的延时措施，提高了激光放大器的转换效率和稳定性。

The temperatures of laser diode array and Nd : YLF rod are controlled effectively and the accurate delay is adopted . Such measures increase the energy conversion efficiency and stability of amplifier .

直径为320mm的大孔径高功率碘原子激光放大器

A high power atomic iodine amplifier with an aperture of 320 mm

采用三台外腔光栅反馈半导体激光器（ECDL）、四台注入锁定从激光器和一台半导体激光放大器组成激光系统。

The laser diode system is composed of three external cavity diode lasers and four injection diode lasers and a tapered amplifier .