高电子迁移率晶体管

4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制

Fabrication of AlGaN / GaN HEMT Grown on 4H-SiC

本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。

This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT , and obtains some new results and new modeling method .

分子束外延生长InP基赝配高电子迁移率晶体管外延材料

MBE Growth of InP Based PHEMT Epitaxial Materials

Ka波段高电子迁移率晶体管的研制

Development of Ka-Band High Electron Mobility Transistor

高电子迁移率晶体管（HEMT）是基于异质结调制掺杂发展起来的一种高频高速半导体器件。

HEMT is a kind of high speed semiconductor device that bases on the heterojunction modulation doping .

氮化镓高电子迁移率晶体管（GaNHEMT）模型是GaN微波单片集成电路（MMIC）CAD的基础。

Gallium Nitride High Electron Mobility Transistor ( GaN HEMT ) models are basics of the GaN Microwave Monolithic Integrated Circuit ( MMIC ) CAD .

该文介绍了一种高电子迁移率晶体管（HEMT）的小信号参数提取及其仿真软件的研制。

An optimizing parameter extraction technique and emulation software for high electron-mobility transistor ( HEMT ) small-signal model is described .

而高电子迁移率晶体管（HighElectronMobilityTransistor）作为场效应晶体管中的一种，也开始广泛应用于通信、电子等领域，它具有大功率、低噪声、高频、高速等特点。

High electron mobility transistors ( High Electron MobilityTransistor ) as a field-effect transistor , have been widely used in communications , electronics and other fields , it has the characteristics of high-power , low-noise , high-frequency , high-speed .

凭借GaN基半导体材料的良好性能，AlGaN/GaN高电子迁移率晶体管（HEMT）成为微波大功率器件的理想选择。

Due to the excellent property of GaN based semiconductor materials , AlGaN / GaNHigh Electron Mobility Transistor ( HEMT ) become the ideal choice of microwave highpower devices .

AlGaN/GaN高电子迁移率晶体管（HEMTs），是以AlGaN/GaN异质结材料为基础而制造的GaN基器件。

AlGaN / GaN high electron mobility transistor ( HEMT ) is a kind of GaN device based on the AlGaN / GaN heterojunction .

同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件（主要是高电子迁移率晶体管器件）上的潜在应用。

This article also discusses the electrical properties of zinc blende structure InN thin films and presents the potential application of InN thin films for devices ( mainly for high electron mobility transistors ) .

本文在高电子迁移率晶体管（HEMT）小信号等效电路模型的基础上，考虑了AlGaN/GaNHEMT的结构特性，具体分析了寄生参数和本征参数的提取方法。

Considering the peculiarities of AlGaN / GaN high electron mobility transistors ( HEMTs ), a model of extracting parasitic and intrinsic parameters for HEMT 's small signal equivalent circuit is presented .

基于电荷控制理论，考虑到极化效应和寄生漏源电阻的影响，建立了能精确模拟AlGaN/GaN高电子迁移率晶体管直流IV特性和小信号参数的解析模型。

Based on the charge control theory , an accurate analytical model for the dc I V characteristics and small signal parameters of an AlGaN / GaN high electron mobility transistor ( HEMT ) is developed considering the effects of polarization and parasitic source drain resistances .

由此给出了高电子迁移率晶体管（HEMT）在大栅压时跨导变化的特性，与实验进行了比较，符合较好。

Then , the transconductance characteristics of the high electron mobility transistor ( HEMT ) is obtained . The comparison of theory and experiments are also made , and we find that they are in good agreement .

AlGaN/GaN高电子迁移率晶体管（HEMTs）就是基于AlGaN/GaN异质结材料制造的GaN基器件，该类器件在高跨导、大饱和电流以及高截止频率方面有着很出色的表现。

AlGaN / GaN high electron mobility transistor ( HEMTs ) is a kind of GaN device based on the AlGaN / GaN heterojunction , and they own the outstanding performances of high transconductance , high output saturation current and high cutoff frequency .

由共振隧穿二极管（RTD）和高电子迁移率晶体管（HEMT）构成的多值逻辑（MVL）电路可以用最少的器件来完成一定的逻辑功能，达到大大简化电路的目的。

The multiple valued logic ( MVL ) circuits , which composed by resonant tunneling diodes ( RTD ) and high electron mobility transistors ( HEMT ), can complete definite logic functions with less devices . So the MVL circuits are simplified .

提出了一种新结构单片集成增强/耗尽型（E/D）InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管（PHEMTs）。

The monolithic integration of enhancement - and depletion-mode ( E / D-mode ) InGaP / AlGaAs / InGaAs pseudomorphic high electron mobility transistors ( PHEMTs ) with a 1.0 μ m gate length is presented .

高电子迁移率晶体管的光照特性分析

Analysis of Properties of High-Electron & Mobility-Transistor under Optical Illumination

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

A new small signal physical model of InP-based composite channel high electron mobility transistor

高电子迁移率晶体管

High electron mobility transistor

这些器件包括了单电子晶体管、共振隧穿二极管、高电子迁移率晶体管、δ掺杂场效应晶体管、量子点元胞自动机、量子阱红外探测器、埋沟异质结半导体激光器、量子级联激光器等。

Electron transistor , resonant tunneling diode , HEMT ,δ EFT , quantum dot cellular automata , quantum well infrared photodetector and quantum laser are investigated .

它是制备性能优良的光电子与微电子器件，如光纤通讯激光器、光电探测器、高电子迁移率晶体管、电光调制器等的主要选择对象之一。

It is a good candidate for the high quality photoelectronic and microelectronic devices , such as fiber optical communication lasers , photoelectronic detectors , high electron mobility transistors and electro-optic modulators .

高电子迁移率晶体管是一种新型的场效应晶体管，具有高频率、低噪声、大功率等一系列的优点。

The high electronic mobility transistor is a Field Effect Transistor , which has a series of merits , such as high-frequency , low noise , high efficiency , and so on .

该条件退火后高电子迁移率晶体管最大跨导提高8.9%，肖特基栅反向漏电流减小2个数量级，阈值电压绝对值减小。

Under this condition the maximum transconductance is raised by 8.9 % , the reverse leakage of schottky gate is reduced by two orders of magnitude , and the threshold voltage moves toward the positive direction .

在蓝宝石衬底上用MOCVD技术生长的AlGaN/GaN结构上制作出0.25μm栅长的高电子迁移率功率晶体管。

MOCVD-grown 0.25 μ m gate-length AlGaN / GaN high electron mobility transistors ( HEMTs ) are fabricated on sapphire substrates .