晶向

SiO2膜驻极体的表面化学处理及其P-型硅基片的晶向选择

The Surface Chemical Treatment of SiO_2 Film Electret and Its Wafer P-silicon Substrate Crystal Orientation

TMAH具有刻硅速率高、晶向选择性好、低毒性和对CMOS工艺的兼容性好等优点，而成为MEMS工艺中常用的刻蚀剂。

TMAH has become a commonly used etchant for MEMS technology because of its high silicon etching rate , which depends on crystal orientation , low toxicity and well compatibility with CMOS technology .

用X衍射仪测定其优选晶向；

The crystalline orientation is measured with x-ray diffraction ;

P＜100＞Si衬底晶向偏离度对外延埋层图形畸变的影响

Effect of Orientation Deviation on Pattern Distortion in Epitaxial Buried Layer on P 100 Si Substrate

本文指出，在影响P型（100）硅处延埋层图形畸变的诸因素中，衬底晶向偏离度是决定性的。

For p-type ( 100 ) silicon substrate , the orientation deviation is the main factor influencing pattern distortion in epitaxial buried layer .

等离子体喷涂TiO2涂层晶向的价电子结构分析

Valence electron structure analysis of crystalline orientation in plasma-sprayed tio_2 coatings

结果表明：随样品施加偏压的升高，TiN（111）晶向择优生长。

The XRD result indicates TiN films trends to ( 111 ) preferred orientations with increasing sample bias .

通过X射线衍射光谱可以得知CoFe2O4/SrTiO3薄膜沿着a轴晶向生长，具有较好的择优取向性。

From the X-ray diffraction spectra can be learned that CoFe2O4 / SrTiO3film is preferentially oriented along the a-axis perpendicular to the substrate surface .

本文研究了在Si（100）衬底上淀积双层薄膜的分层结构中超声表面波沿Si[110]晶向传播的速度-频率色散关系。

In this paper , the dispersive characteristics of SAW propagating along the Si direction on the two-layered structure were studied in detail .

随着Er含量的增加，该焊料合金的组织由树枝晶向等轴晶转变，且组织逐渐细化。

With the increase of Er content , the microstructure of the solder changes from fir-tree crystal to equiaxed crystal and is refined .

X射线衍射结果表明：施加复合场后，晶粒的111晶向沿磁场方向取向；晶粒取向度随晶粒的细化有增大趋势。

X-ray diffraction indicated that the refining grains were oriented with 111 towards the magnetic field direction . The orientation degree was increased with the decreasing of grain size .

X-射线衍射（XRD）测试表明ITO薄膜的晶粒尺寸随膜内氧的摩尔分数增加而增大，随氧气比例增加薄膜（400）晶向消失。

XRD test showed that grain size of ITO films increased and crystallization direction ( 400 ) disappeared with more oxygen flow .

所用的样品用MOCVD方法生长在<100>晶向的GaAs衬底上。

The sample used in this study was grown by MOCVD method on < 100 > oriented GaAs substrates .

晶向对InGaP/GaAsHBT性能的影响

Orientation Effects on InGaP / GaAs HBT

同时本文还提出了适合铸锭凝固过程的柱状晶向等轴晶转变（CET）判据。

A columnar-to-equiaxed transition ( CET ) criterion is developed for the case of solidification of ingots .

硅KOH腐蚀<100>晶向凸角补偿技术及应用

Compensation technique for < 100 > convex corner undercutting in KOH anisotropic etching of silicon and its application

三种磁感应强度下，在[111]晶向单晶硅抛光片上，Cr镀层都以（110）晶面择优生长。

On silicon polished wafer whose orientation index is [ 111 ] , the Cr coating all by ( 110 ) crystal face preferred grow at three magnetic induction intensity .

利用AES和同步辐射光电子谱，在圆柱状的Si单晶样品上研究了氧表面吸附的晶向关系。

AES and photoelectron spectra obtained with synchrotron radiation have been used to study the orientation dependence of oxygen adsorption on a cylindrically shaped Si single crystal .

阐述了非活性GaAs／Ge太阳电池的制备技术，包括采用较低的生长温度，较快的生长速率，适当晶向的单晶衬底及背面屏蔽等措施。

The fabrication technology of inactive GaAs / Ge SC , including lower growth temperature , faster growth velocity , proper crystal orientation , back surface shield , etc.

采用切克劳斯基技术，观察了按不同晶向从熔态生长InSb单晶时固液界面的形貌。

The observations of solid-liquid interface morphology of InSb single crystals pulled by using various oriented seeds is described .

单晶直径30～35mm，晶向<111>。

The crystal diameter is 30 ~ 35 mm , < 111 > orientated .

纳米棒沿（100）晶向生长，其形成可以用Ostwald成熟机制来解释。

The growth of the nanorods can be explained by the Ostwald ripening mechanism .

柱状晶向等轴晶转变（CET）是在一定的凝固过程中必须控制的一种显微组织转变。

The columnar to equiaxed transition ( CET ) is a kind of microstructural transformation in certain solidification , which should be controlled .

通过理论计算得到了KDP晶体在不同晶向上临界切削厚度的变化规律。

The variation rules of critical cutting thickness on the different crystal and different orientation of KDP crystal are obtained by theoretic calculate .

采用低压金属有机化学气相沉积（LPMOCVD）法，成功地在（0001）晶向的蓝宝石（Al2O3）衬底上制备了高质量的GaN薄膜。

High-quality GaN film was successfully deposited on ( 0001 ) - oriented sapphire substrate by low-pressure metal-organic chemical vapor deposition ( LPMOCVD ) process .

随合金元素Zn和A1增加，合金由粗大的树枝晶向细小的等轴晶转变，晶粒尺寸逐渐减小，而晶界处的共晶相数量逐渐增多，尺寸逐渐增大。

With increasing of Zn and Al , the coarse dendrites transite to fine equiaxed grains and the grain size is gradually reduced ; While the number of eutectic phase and its size both gradually increased .

采用CZ法拉制晶向为<100>Ge单晶，利用化学腐蚀和金相显微镜研究Ge单晶中位错密度、位错坑形态发展过程。

The chemical etching pits , dislocation density and profile of the monocrystalline Ge < 100 > grown by the CZ were studied by the chemical etching experiment under the optical microscope OLYMPUS .

用深能级瞬态谱（DLTS）技术详细研究了金在p型<111>晶向硅MOS结构Si/SiO2界面区中的行为。

Behavior of gold in the Si / SiO2 interface region has been investigated using deep level transient spectroscopy ( DLTS ) in the MOS structures made on p-type silicon wafers with < 111 > orientation .

根据同一晶向的晶面具有平移周期对称性，将托马斯费米方程引入晶体的平面沟道中求解Si（110）平面沟道内的电场；

According to the transnational periodically symmetry of crystal plane in its space , the author introduce the Thomas-Fermi equation in crystal planar channeling electric fields ; then calculate the electric fields of single crystal Si ( 110 ) and its critical angle .

本论文选择汞滴与硅基底间的润湿行为作为研究对象，主要开展了以下工作：采用电化学刻蚀的方法，在n型100晶向硅基底上制备出条状和柱状有序多孔硅阵列。

The wetting of mercury on Si was chosen as the research object in this thesis . The research work mainly contains the following aspects : This thesis utilizes electrochemical etching technology to prepare the strip and pillar ordered porous silicon array on the n-type 100 Si substrate .