悬挂键

基于这类薄膜的光吸收和电导特性，应用带Nd背键的悬挂键模型分析讨论了这些变化特性的物理原因。

Based on the optical absorption and conductive properties in this kind of alloy films , using the dangling bond model with Nd back bonds , the variation of properties are analyzed and discussed .

并指出，V4~-的单个悬挂键上的η~2比其它具有单个悬挂键的缺陷小，是由于V4~-的势分布向一侧有较大偏重所致。

Our results point out that ? 2 on single dangling bond of V_4 ~ - is smaller than that of other defects with single dangling bond , this is because the potential distribution for V4 ~ - deviates from the single dangling bond case .

同时氢离子还可以饱和非晶金刚石薄膜表面的悬挂键，使薄膜表面具有一定含量的C－H键，从而降低电子亲和势；

It could also saturates dangling bonds on the a-D film surface with bydrogen , leading to a hydrogenated lowed-electron-affinity surface .

接近表面熔化温度时，双悬挂键单原子、c（2×2）和三聚体等亚稳态结构都消失，表面只存在稳定的p（2×1）结构。

Up to the surface melting temperature , these metastable structures disappear and the simple p ( 2 × 1 ) structure remains on the surface .

模型以氢钝化SiC表面悬挂键，降低SiC表面的界面态密度，消除了费米能级钉扎，获得理想的SiC表面。

The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface .

PECVD氮化硅膜氢键及硅悬挂键的研究

Silicon Dangling Bonds and Hydrogen Bonding Configurations in PECVD Silicon Nitride Films

另一方面DNA分子具有双螺旋结构，其对称性较低，分子中存在大量的悬挂键，这些悬挂键上的未成对电子也会进入π&电子系统。

On the other hand , the double helix DNA molecule with low symmetry has a lot of hanging bonds , and the unpaired electrons of these hanging bonds may come into the π - electrons system .

a-Si：H薄膜的一系列特性同膜中的氢存在密切关系，一方面，氢以单氢化合物（Si-H）方式结合到膜中，从而饱和了膜中的悬挂键；

The speciality of a-Si : H films is closely associated with hydrogen content in films .

发现与P原子悬挂键有关的本征满表面态在Г点位于价带顶下0.6eV处，而缺陷引入的空表面态位于价带顶上1.1eV处（Г点）。

It is found that the intrinsic occupied surface states related to P atom dangling bonds are located at 0.6 eV below the valence band maximum , while the defect induced empty surface states are located at 1.1 eV above the valence band maximum (Γ point ) .

利用XPS测试进行机理分析，钝化效果实现是由于氧化剂将氧原子与表面的悬挂键结合，使样品表面的悬挂键密度减少，进而减少杂质能级的密度。

XPS results were used for further mechanism analysis . The bonding between Ge atom and O atom has reduced the density of dangling bond , which in turn decreases the density of combination energy level and realizes the passivation effects .

根据这些结果，可以推测InP（100）的富In表面存在In的空位，与In空位相邻的P原子悬挂键发生了转向。

It could be deduced from the above evidences that there must exist some In vacancies on the In-rich InP ( 100 ) surface , and the dangling bonds of those P atoms which are located next to the In vacancies orientate off their normal directions .

硫对砷化镓表面悬挂键的饱和作用

The saturation of dangling bonds on GaAs surface by sulfur

a-Si：H中无序对悬挂键电子状态的影响

Effect of disorders in a & Si : h on dangling bond states

这些平面结构采用三角形网状结构是为了减少悬挂键的数目。

The planar structures are at the origin of the minimization of dangling bonds .

硅的位错核心结构无悬挂键

No Dangling Bond in Si Dislocation Core Structure

这些悬挂键在较高氢分压下可部分被饱和。

These dangling bonds can be saturated by H.

悬挂键式双向铧式犁

Alternate type mounted reversible moldboard plough

经活化后表面硅悬挂键明显增加，从而对羟基进行有效的化学吸附。

Surface silicon dangling bonds are significantly increased after surface activation which lead to effectively chemical adsorption of OH groups .

这意味着杂质（如石墨）和缺陷（悬挂键）极大地影响了膜的场发射性能。

It means that the impurity ( such as graphite ) and defects ( dangling bonds ) in the films greatly affect their field emission .

考虑到（111）AInP衬底的悬挂键密度比较低，在生长过程中有意提高了V/Ш比。

Considering the low dangling bond density of indium atoms on ( 111 ) A InP , the V / Ш ratio was increased intentionally .

表面的几何结构、拓扑结构影响着不同悬挂键上电子交换、成键和迁移作用之间的竞争。

The geometric and topological structures of the surfaces impact the competition between the exchange , bonding and transfer of the electrons in different dangling bonds .

在荷电的悬挂键模型下，计算了各种情况下的费密能级和电子浓度。并对两类不同的非晶半导体作了详细的讨论。

With approximation of single dangling bond , the positions of Fermi level and the electron densities have been calculated for two groups of amorphous semiconductors .

研究表明氢化可饱和α&Si：H中的悬挂键和应力键等缺陷，并使能隙中的电子态消除。

It is shown that hydrogenation compensates dangling bonds as well as strained bonds in α & Si and thus removes the undesirable electronic states in band gap .

包膜工艺消除了纳米晶Y2O3：Eu3+红色荧光体的表面缺陷和悬挂键，改善了其发光特性。

The hanging-bonds and the defects on the surface of nanocrystalline Y 2O 3 : Eu 3 + particle were removed and its luminescence intensity was increased by the coating process .

得到的结果表明，由悬挂键引起的禁带中的电子态可因氢原子饱和而消失，与实验结果相符。

The results obtained show that the gap states due to the dangling bonds existing in amorphous SiC system could be eliminated by hydrogen saturation , which supports theoretically the related experimental results .

但是由于其含有大量的缺陷态（主要是悬挂键），使其在实际应用方面受到一定限制，其中最主要的问题是光致衰退效应。

However , because it contents lots of defect states ( mainly dangling bonds ), its application in practice has been confined in some ways . The main problem is the light-induced degradation ( Staebler Wronski Effect ) .

薄膜的致密程度、键畸变程度和悬挂键数目与其晶态比有关。提高晶态比可使一部分带尾态和带隙态分别转化为扩展态或消失。

The density , the bond distortion and the number of dangling bonds decrease with the increase of the crystalline volume fraction , resulting part of the band tail states and the band gap states are transformed into extended states or disappear .

本文根据非晶半导体中的荷电悬挂键模型，用统计力学的方法推导出三种荷电缺陷中心的分布函数，并由此得到系统的费米能级和荷电中心上平均电子数的关系式。

In this paper , the distribution functions of three kinds of charge defect centers are given by using statistical mechanics method according to model of charge defect centers in amorphous semiconductors . The relation between Fermi energy and average electron number at charge defect centers is also given .

合成了含有悬挂醚键的大孔交联聚苯乙烯树脂，研究了它们对正己烷溶液中苯酚的吸附性能。

Several kinds of macroporous crosslinked polystyrene resins with pendent ether bond are obtained from chloromethylated polystyrene and their adsorption properties for phenol from hexane solution are discussed .