反射高能电子衍射

反射高能电子衍射能谱

Reflection high energy electron diffraction spectroscopy

GaAs（110）衬底上生长GaAs外延层时，不同生长条件下存在单层和双层两种生长模式，对应反射高能电子衍射RHEED强度振荡呈现出单双周期的变化。

When the GaAs epitaxial layer grows on the GaAs ( 110 ) substrate , there are two growth modes ( monolayer-by-monolayer and bilayer-by-bilayer ) under different conditions that correspond to monolayer and bilayer RHEED ( Reflection High Energy Electron Diffraction ) oscillations .

Si（100）和（111）面和在其上Ni分子束外延的反射高能电子衍射研究

Study of si ( 100 ) and ( 111 ) surfaces and molecular beam epitaxy of Ni on them by RHEED

SrTiO3同质外延过程中的反射高能电子衍射图案分析

Analysis of reflection high-energy electron diffraction pattern during SrTiO_3 homoepitaxy

在整个实验过程中，用反射高能电子衍射（RHEED）原位监测膜生长。

The growth surfaces of fihns were monitoring in situ by reflective high-energy electron diffraction ( RHEED ) in the whole process .

通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积（ECR-PEMOCVD）系统上装配反射高能电子衍射仪（RHEED），对外延GaN生长过程进行原位监测。

The reflection high-energy electron diffraction ( RHEED ) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition ( ECR-PEMOCVD ) system designed by us was used to monitor the GaN growth process in-situ .

并对其做了反射高能电子衍射（RHEED）、X射线衍射（XRD）和扩展电阻（SR）等测量，给出了利用这种结构研制出的异质结双极晶体管（HBT）的输出特性曲线。

Reflective High Energy Electron Diffraction ( RHEED ), X-Ray Diffraction ( XRD ) and Spread Resistance ( SR ) measurements are made on the structure . Heterojunction bipolar transistors ( HBT 's ) have been developed using this structure . Results of measurements are discussed .

并通过拉曼散射，扫描电镜、反射高能电子衍射对实验结果进行了检测分析，在（100）面同质外延的金刚石单晶膜上观察到了螺旋生长的现象。

Spiral growth was observed on the ( 100 ) face of the above obtained homogeneous epitaxial diamond film .

通过反射高能电子衍射原位实时监测薄膜生长，结合原子力显微镜等表征手段，分析了薄膜的表面微观结构，确定了薄膜的生长模式。

The growth mode was determined by in-situ reflective high energy electron diffraction , and the surface of the films was characterized by ex-situ atomic force microscopy .

电子衍射条件对Si（111）外延时反射式高能电子衍射强度振荡的影响

The effect of electron diffraction conditions on RHEED intensity oscillations during si ( 111 ) MBE

Si衬底上分子束外延Ge，Si时的反射式高能电子衍射强度振荡观察

RHEED intensity oscillations in the process of molecular beam epitaxy growth of Ge and Si on Si substrates

虚拟反射式高能电子衍射实验系统的设计

Design of virtual reflection high energy electron diffraction experimental system

分子束外延反射式高能电子衍射的强度振荡采集系统及其应用

Acquisition system of RHEED intensity oscillations and its application during the MBE growth

高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜

In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction