反向饱和电流

水泥基pn结有良好的单向导电性，并且随时间的增加反向饱和电流越小。

Experiments show that the cement-based pn-junctions have a good unilateral conductivity .

该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。

The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure .

实验结果还表明，ITO／PTCDA／P-Si／Al同型异质结的暗电流主要成分是耗尽区中载流子的产生一复合电流结的反向饱和电流。

The result of the study shows that the main ingredient of the dark-current is generation-recombination current in depletion region .

需要提取的参数包括：反向饱和电流，二极管的理想因子，串联电阻和并联电阻。

Extract parameters including : reverse saturated current , diode ideal factor , series resistance and parallel resistance .

根据肖特基势垒的反向IV曲线，计算了势垒的反向饱和电流密度和平均理想因子。

We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics .