分凝

OS界面杂质分凝的计算机辅助分析

The Computer Aided Analysis of Impurity Segregation in the OS Interface

通过X射线荧光分析研究了晶体中的分凝现象。

The segregation phenomenon in the crystal along the growth direction was investigated by X-ray fluorescence analysis .

杂质离子在Sr（NO3）2晶体中分凝行为的研究

Study on the distribution of impurities in sr ( no_3 ) _2 crystals

铝原子在多晶硅晶粒间界分凝的AES研究

Study of Aluminum Atom Segregation at Grain Boundary of Polycrystalline Silicon by AES

用X射线荧光分析法测得两个主要元素Gd和V的分凝系数都接近1。

The effective segregation coefficients of Gd and V were measured to be near 1 by means of X-ray fluorescence method .

P型杂质Ga在SiO2-Si内界面分凝规律研究

Investigation of the Segregation Rule of P-type Dopant Ga at SiO_2 / Si Interface

同成份LiNbO3晶体中MgO的有效分凝系数的测定

The determination of efficient distribution coefficient of MgO in the congruent LiNbO_3

引上法生长Mg2SiO4：Cr单晶中铬的分凝系数

Distribution Coefficient of Cr in Mg_2SiO_4 - : Cr Crystal by Czochralski Method

Bridgman法晶体生长中的溶质分凝与偏析

Solute Partition and Segregation in Bridgman Growth Process

两性杂质锗在LPEGaAs中分凝系数和占位比的计算

Calculation of the Segregation Coefficient and the occupation Ratio Ga Ge / Ge As of the Amphoteric Impurity Ge in LPE-GaAs

莫来石是由偏高岭石分凝形成的SiO2和Al2O3反应而形成的。

Mullite is formed from the reaction of SiO_ ( 2 ) and Al_ ( 2 ) O_ ( 3 ) derived from metakaolinite segregate .

分凝对Pb（Mg（1/3）Nb（2/3））O3-38%PbTiO3单晶的成分及介电、压电性能的影响

Effects of Segregation on Composition and Dielectric and Piezoelectric Properties of Pb ( Mg_ ( 1 / 3 ) Nb_ ( 2 / 3 )) O_3-38 % PbTiO_3 Single Crystal

第三章系统研究了不同条件下Ga在SiO2-Si内界面的分凝特性。

The segregation of Ga at SiO2-Si internal interface has been investigated systematically in the third chapter .

1100℃开始，由偏高岭石分凝形成的非晶质SiO2一部分和Al2O3-γ发生反应生成了莫来石，一部分结晶为方英石；

Starting from ( 1100 ℃), a part of non-crystal SiO_2-segregated meta-kaolinite reacted with Al_2O_3 - γ to form mullite , the rest crystallized as cristobalite ;

偏高岭石莫来石的相转变过程中存在SiO2和Al2O3的分凝。

There exist the segregation of SiO_ ( 2 ) and Al_ ( 2 ) O_ ( 3 ) during the phase transformation from metakaolinite to mullite .

Al-Cu-Mg三元合金的溶质分凝与凝固进程的数值模拟研究

Numerical Simulation on Solute Partition and Solid Fraction Evolution in Solidification of Al-Cu-Mg Alloys

Al-Si-Mg三元合金的溶质分凝及其对凝固过程的影响

Solute partition behavior and its influences on solidification process of Al-Si-Mg alloys

杂质分凝对FZ-Si单晶电阻率均匀性影响的研究

Investigation of the Resistivity Uniformity Influenced by Impurity Segregation in FZ-Si

生长界面的调制电流对LiNbO3晶体中溶质分凝的影响

The Effects of Modulated Currents Applied Across the Crystal-Melt Interface on Segregation of Solute in LiNbO_3

真空FZ硅掺镓试验表明，镓在区熔过程中一边发生分凝，一边向外蒸发。

Experiments on Ga-doped FZ-Si grown in vacuum demonstrated that Ga would segregate and evaporate during the Floating-zone process .

对掺钕钒酸钇（Nd∶YVO4）的多晶料制备、单晶生长、晶体生长形态、掺质分凝效应等进行了系统研究。

The polycrystalline materials preparation , single crystal growth , growth morphology and dopant distribution effect of Nd ∶ YVO 4 crystal have systematically been studied .

结果表明，在冶金级硅单向凝固试棒中，存在杂质元素的负偏析区，凝固工艺参数GL、R及GL/R对杂质元素的分凝特性有极显著的影响。

The results show that there is a negative segregation region of impurity in the sample . Solidification parameters G , R and G / R have markable influence on purification property of impurity .

贮氢材料LaNi5的表面分凝

Surface segregation of lani_ as hydrogen storage materials

使用DTA和LMC定向凝固淬火技术分别确定了AlCuZn合金富铝角的液相面和固/液界面溶质分凝因数。

The liquidus surface and solute partition coefficience in the Al-rich corner of the Al-Cu-Zn alloy were determined by differential thermal analysis ( DTA ) and LMC directional solidification and quenching technology .

Al-Cu-Zn合金溶质分凝的热力学模型

Thermodynamic models for the solute partitioning in Al-Cu-Zn ternary alloys

模拟及实验证实，该模式可显著抑制PMOS结构栅氧化过程中的杂质分凝。

The simulation and experiment have shown that the pattern may restrain remarkably impurity segregation effect in the process of PMOS structure grid oxidization .

实验发现，外延生长Siδ掺杂GaAs时，随着生长温度的升高，Si掺杂分布SIMS峰非对称展宽，表面分凝作用加强，但不影响Si原子的扩散。

Our results for Si δ - doped GaAs indicate that all the Si peaks of SIMS depth profile show asymmetric broadening and surface segregation increases with growth temperature , however , which are not influencing the diffusion of Si atoms .

本文报告了贮氢材料LaNi5的表面分凝及其影响因素。

The surface segregation and its factors of effecting at the surface of LaNi_5 as hydrogen storage materials have been studied .

采用活度模型和浓度模型进一步计算了平衡分凝因数，发现两个模型计算出的Cu和Zn的平衡分凝因数一致，并讨论了模型计算值和试验值之间的差异。

These coefficients were further calculated using the activity model and concentration model , and the calculated partition coefficients for Cu and Zn in Al-Cu-Zn alloy by the two models were agreeable . The difference between the experimental data and the modeling result was discussed .

揭示出开管方式扩散Ga的实质是由SiO2薄膜对Ga原子的快速输运及其在SiO2-Si内界面分凝效应两者统一的必然结果；

The essence of open-tube Ga diffusion is revealed , which is closely related with both the rapid transportation of Ga through SiO2 film and the segregation effect of it at the internal surface of SiO2-Si .