击穿场强

SiC以其特有的大禁带宽度、高临界击穿场强、高电子迁移率、高热导率等特点，成为制造高温、高频、大功率、抗辐照及光电集成器件的理想材料。

Silicon carbide ( SiC ), which has large band gaps , high critical breakdown field strength , high electron mobility and good thermal conductivity , is considered as an ideal material to manufacture the optoelectronic integrated device with high temperature , high frequency , high power and radioresistance .

测试结果表明，PI/SiO2薄膜的击穿场强为195.8KV/mm，PI薄膜击穿场强为181.82KV/mm，纳米杂化后薄膜的耐电性得到提高。

The testing results show that the breakdown field strength of PI / SiO2 and PI are 195.8KV/mm and 181.82KV/mm respectively , and nano-hybridization improves the electricity resistance character of the PI film .

电晕老化前，纯PI薄膜的击穿场强明显高于掺杂后的复合薄膜，且随着填料含量的增加击穿场强都呈下降的趋势。

All the breakdown strengths of nanocomposite films decreased with increasing the corona aging time .

Fe3O4、Fe2O3对燃煤飞灰比电阻和击穿场强的影响

Effect of Fe_3O_4 and Fe_2O_3 on the specific resistivity and the field strength of electrical breakdown for coal fired fly ash

镁的掺杂有助于获得细晶高致密的陶瓷，当n（Mg）/n（Ti）为0.06时，致密度最高，常温下相对介电常数高达4100，击穿场强达到3.2MV/m以上。

When the atomic ratio of Mg to Ti is 0.06 , the density reaches the maximum and dielectric constant reaches 4100 and destroyed electric strength rises up to more than 3.2 MV / m.

结果表明：纳米银复合材料具有较高的电阻率和击穿场强，较低的tgδ和较高的介电常数。

By analyzing their dielectric properties , the results show that nano-Ag composites have higher resistivity and strength of the breakdown electrical field , lower tg δ, and a higher dielectric constant .

由宽带隙导致的高击穿场强以及高热导率使GaN尤其适用于高能和高频器件中的应用。

Furthermore , the large band gap results in a large breakdown field , which together with its high thermal conductivity , makes GaN especially suitable for high-power and high-speed applications .

主要研究了用磁控溅射方法在不同衬底温度下生长ZnO薄膜的电学特性，分析了ZnO薄膜的电阻率和击穿场强随温度的变化关系。

The electrical properties of ZnO thin films under different substrate temperature by magnetron controlled sputtering are studied , and the relationship between the resistivity of ZnO thin films and the breakdown electric field with the changing of temperature is analysed .

GaN作为第三代半导体材料，具有禁带宽度大、击穿场强高、热导率高以及电子饱和速度高等特点，广泛应用于高温、高频和大功率等领域。

As the third generation semiconductor material , GaN takes advantages form bigger forbidden band width , higher breakdown voltage , higher thermal conductivity and higher electronic saturation speed which are suitable for high temperature power applications .

本文还采用减小上电极面积和对基底进行预处理两种方法，制备了具有高击穿场强和低漏电流密度的MIM单元结构，提高了成品率。

The MIM structure of high quality was fabricated by reducing the area of top-electrode and pretreatment on substrates , and the yield was also improved by these two methods .

碳化硅（SiC）由于具有宽禁带、高击穿场强、高热导率等优异的物理及电子学特性，使其在高温、高频、大功率及抗辐射等领域具有广阔的应用前景。

SiC has wide application in the field of high temperature , high frequency , high power and radioresistance because of its excellent physics and electronic characteristics , such as wide band gap , high breakdown electrical field and high thermal conductivity .

介绍国外一些对在稍不均匀电场中SF6气体的工程击穿场强的研究现状，并说明了电场均匀程度的一种判断方法。

Introduction to present situation of overseas research on some engineering breakthrough field intensity of SF6 gas in a slightly uneven electrical field and reveals a judging method on electric field even degree .

碳化硅（SiC）材料具有宽禁带、高电子饱和漂移速率、高临界击穿场强、高热导率等优良特性，在高频、高温、大功率、抗辐射等领域拥有极为广阔的应用前景。

Silicon carbide ( SiC ) has found wide application in the fields of high-frequency , high-temperature , high-power and radio-resistant due to its excellent properties such wide gap , high electron saturation drift velocity , high critical electric field and high thermal conductivity .

研究结果表明：除示性电压、流动性外，化学接枝聚硅氧烷后的LDPE在耐环境应力开裂性、断裂强度、伸长率、击穿场强等方面均比与聚硅氧烷物理共混后的聚乙稀好。

Result of study shows that environmental stress cracking , tensile strength , elongation at break , and breakdown voltage of grafted LDPE are better than that of blent LDPE except incep ˉ tion voltage of electric treeing and fluidity .

SiC单晶因其宽的禁带宽度、高的电子饱和速度、大的临界击穿场强、高的热导率和热稳定性等特性而成为制作高频、大功率和耐高温器件的理想材料。

Silicon carbide ( SiC ) is a promising material for high power , high frequency , high temperature applications because of its excellent properties such as wide band gap , high saturated electron velocity , high electrical breakdown field , high thermal conductivity , thermal stability and so on .

第三代半导体材料GaN具有禁带宽度大、电子饱和漂移速率高、介电常数小和击穿场强高等特点，非常适用于制作高频、高速、高功率、抗辐射、高集成度的电子器件和电路。

As a third-generation semiconductor , GaN having excellent characteristics such as wide band gap , high electron saturation drift velocity , small dielectric constant and high breakdown field , is very suitable for making high-frequency , high-speed , high power , anti-radiation , high integration electronic devices and circuits .

击穿场强系数随乙二醇浓度的增加而增加；

The coefficient in Martin formula increases with increasing glycol concentration ;

强电负性气体特征值与临界击穿场强的研究

Critical Breakdown Strength and the Figure of Merit of Electronegative Gases

流体静压从1atm增加10atm时，水击穿场强增加8%，并对实验结果进行误差分析和理论解释。

Then , experiment errors are analyzed and experiment results are interpreted theoretically .

对覆冰、冠雪时的击穿场强进行了分析；还分析了介质损失角正切对绝缘性能的影响等。

The affect of the angle of medium loss for insulation performance was analyzed .

电容和击穿场强是电容器的两个重要电性能指标。

Condenser 's capacity and breakdown field strength are two important indicators of electrical properties .

电负性混合气体临界击穿场强与电子附着速率的探讨

A survey on the limiting breakdown strength and electron attachment rate constants in electronegative gas mixtures

结果表明，随着上电极面积增大，电容的漏电流密度增大，击穿场强减小。

The results showed that the electrical properties get deterioration with the increase of top-electrode area .

电源频率对气体的击穿场强也有一定影响。

The frequency of the power source also has an effect on the electric field for discharging .

研究结果表明，在合适的纳米银含量时，这种复合材料表现出高于其基体的电阻率和击穿场强。

The results show that the composite with a proper nano silver concentration has a high resistivity and breakdown strength .

结果显示重频脉冲常压下空气的击穿场强比单次脉冲时低得多；

Experimental results showed that the breakdown electric field of repetitive burst is much lower than that of single pulse .

随着纳米硅氧化物掺杂量的增加，聚酰亚胺杂化薄膜的击穿场强和热分解温度也相应的提高。

With the increase of adulterated silicon oxide , the breakdown strength and thermal decomposition temperature of hybrid PI films increase .

液体介质具有击穿场强高、自行恢复性能好、费用低廉和易于操作等方面的优点，因而作为绝缘介质被广泛应用于强流电子束加速器。

Liquid dielectric with high electric breakdown strength , self-healing , low cost and easy operation is extensively used in intense electron-beam accelerators .

研究了不同界面修饰剂对复合材料界面、结晶度、击穿场强、介电、压电和热释电性能的影响。

The impacts of interfacial modifier content on the interface , crystallinity , breakdown strength , dielectric , piezoelectric and pyroelectric properties were discussed .

在试样与电极夹角约45°时，绝缘材料的沿面击穿场强最高。

When angle between electrode and sample is around 45 °, the surface flashover stresses of nylon 6 and organic glass are the highest .