入射强度

并且以熔融石英玻璃为例分析了碰撞电离系数和多光子电离系数与激光入射强度之间的关系。

The changes of avalanche ionization rate and multi-photon ionization rate with the changes of laser intensity are investigated by taking the silica glass as an example .

结果表明，改变暗孤子的入射强度能够有效而准确的控制明孤子在晶体中传播时中心的偏转量。

The results show that changing the input amplitude of the dark soliton can adjust the spatial shift of the center of the bright soliton effectively and accurately .

结果表明，集热效率随空气流量的增大而增大，随入口空气温度的升高而急剧下降，随入射强度的增加，集热效率从零迅速增大到最大值而后逐渐略有减小。

It was discovered that collection efficiency of type ⅱ solar air heater increases with increasing air flow rate , and with decreasing temperature of inlet air and intensity of incident solar radiation .

通过研究不同入射强度比的两种光产生的相位共轭光强变化，特别是它们各自建立相位共轭光栅的响应时间差别，发现非单一强度分布的远场光产生的相位共轭光在时序上能分离。

By studying the changes of their conjugate intensity , especially the response time differences of their grating build up with different incident light intensities , it was found that the conjugate light produced by the non single intensity distribution light in far field can be separated in time sequence .

Ce∶KNSBN晶体光扇效应的入射光强度阈值特性研究

Beam Threshold Characteristics of Beam Fanning Effect in Ce ∶ KNSBN Crystal

在研究范围内，pH6和40W的入射光强度有利于光催化降解。

In research scope , pH 6 and 40W are good for the degradation reaction of Rhodamine B.

X射线是各向同性的，X射线产额随入射激光强度的降低而减小，当强度小于10~（14）W／cm~2时，不再有硬X射线产生。

The X-ray is isotropic measured by PIN detector , the hard X-ray ( > 30keV ) production become smaller with the reduction of the incident laser intensity , when the intensity is lower than 1014W / cm2 , there is no hard X-ray .

提高入射光强度和频率，GM-APD的输出电流也随之增大。

The output current of GM-APD increased with increasing the intensity and frequency of incident light .

因此，研究了BA1分子掺杂的PMMA薄膜的光致双折射和透过信号与入射光强度的关系。

Hence , the dependences of photo-induced birefringence and the transmission signals on the pumping beam intensities in BA1 doped poly ( methyl methacrylate ) ( PMMA ) film were studied .

低能OTR的分布不像高能时那样集中于反射方向附近一个极小的角度内，而是在沿反射方向的很大的立体角内分布，且斜入射时强度分布极不对称。

The distribution of OTR in low energy region does not concentrate in a very small solid angle in direction of reflection just like in high energy region , but distribute in a large solid angle . And it is very asymmetry in the case of oblique incidence .

并且研究了不同聚焦深度及入射激光强度对记录效果的影响。

Further more , the effects of different focus position and incident laser power are investigated .

增大入射光强度或采用短波长的光源均利于苯酚的降解。

Increasing light intensity and / or light source with short wavelength could enhance photocatalysis of phenol .

而该复合材料的质量烧蚀率随入射激光强度和光斑直径的增大而增大。

The mass ablative rate of the composite increases when the laser intensity and spot diameter are increased .

并研究了自聚焦与入射光强度的关系。

And we also investigate the relationship between the self-focusing and the intensity of the incident laser beam .

另一结果是：当入射光强度满足小于饱和值的条件下，总折射率改变随着入射光强度的减小而增大：增加注入载流子浓度同样能得到较大的总折射率改变。

Another result is that the total refractive index change will raise with electron density increasing or incident intensity decreasing .

不同的消光观测资料说明，吸收系数对于波长、雪深以及入射辐射强度具有选择性。

Various extinction observations indicate that the absorption coefficient depends on the wavelength , snow depth and the incident radiation intensity .

一个双激发子弛豫机制被用来解释克尔信号动力学特性对入射光强度的依赖性。

A bimolecular decay is used to explain the dependence of dynamics of the Kerr signal on the incident light intensity .

计算结果表明：入射激光强度、入射激光波长及等离子体背景密度是影响会聚强度的重要因素。

At the same time , it was showed that different laser wavelength or different electron background density could affect filamentation process .

在脉冲激光激发荧光的研究中由于入射激光强度的起伏会导致所激发荧光的强度随之波动，从而给荧光光谱及其待测物质测量结果带来较大误差。

The incident pulse intensity wave will cause the induced fluorescence wave , which will lead to the obvious error of experiment results .

当入射激光强度较高时（～10~（13）W/cm~2），非线性介质的五阶非线性效应巳不能忽略。

The fifth-order nonlinear effects of medium must be included when the incident laser intensity is higher ( - 1013 W / cm2 ) .

为帮助视网膜病变患者有效恢复视觉能力，提出了一种输出信号频率与入射光强度成比例的视觉功能修复电路。

A new visual function recovery circuit , which generates electrical pulses with frequency proportional to the intensity of incident light , is proposed .

当入射光强度超过临界强度时，量子点由于存在较大的三阶非线性而呈现出慢光特性。

When the incident light intensity exceeds the critical intensity , quantum dots show slow light properties due to the presence of large third-order absorption .

旋涡二次流中稀疏颗粒的运动特性研究本文还对不同入射涡强度及相互位置作了计算，并分析了不同参数对涡运动轨迹的影响。

Research on Dilute Particles Motion in Secondary Vortex Flow . The ' rebounding ' phenomenon of the incident vortex is attributed to the effect of secondary vortex .

系统采用一维位置敏感探测器来探测光斑的位置，与其他几种光电敏感器件相比，具有响应速度快，分辨率高的特点，且输出信号反映的是光斑重心，与入射光强度和光斑尺寸大小都无关。

Comparing with other sensitive optoelectronic devices , it has the advantage of fast response , high resolution . And the output signal reflects the focus of beam .

因此，如图中那样，到达探测器的光在与粒子相互作用后要比原来的入射光强度弱。

Thus , the light that reaches the detector as shown in the figure , after interacting with the particles , is less intense than the original incident light .

当入射光强度增加时，我们可以观察到光激发萤光的峰值红移，及拉曼声频支的声子频率红移。

When optical excitation density was increased , a blueshift in the photoluminescence spectra and a redshift in the frequency of GaN A1 ( LO ) phonon were observed .

当入射光强度小于临界强度时，量子点显示出快光特性，它起源于量子点的一阶吸收。

When the incident light intensity is less than the critical intensity , quantum dots show fast light properties , which originate from the first-order absorption of the quantum dots .

同时对光扇效应的入射光强度阈值特性以及稳态光扇强度随入射光偏振态、入射光强度、光入射角的变化作出了相应的物理解释。

The incident beam intensity threshold characteristic and the influence of the incident beam polarization state , intensity and incident angle on the steady beam fanning intensity are physically explained .

三个番木瓜栽培种岭南、2×0.7和4×2的净光合率随入射光强度增高而增大。

The net photosynthesis of papaya leaves ( three cultivars : South China , 2 × 0 . 7 and 4 × 2 ) increased with an increase in light intensity .

通过改变模型中入射光强度和频率、反向偏置电压、负载电阻和分布电容的设置，分析了电路中输出电流、输出电压和死时间的变化情况。

The output current , output voltage and dead time were analyzed with respect to the change of incident light intensity and frequency , reverse bias voltage , load resistance and parasitic capacitance .