光电集成材料

在光电集成研究中硅材料更受青睐。

Si material is more popular in the photoelectric integrated research .

硅作为当前研究的热点领域，即光电集成的基本材料，一个主要的缺点就是它是间接带隙半导体，自身只能发射极微弱的红外光。

A great drawback is the fact that silicon , the basic material for photonics which is the hot field of research and technology , is an indirect-gap semiconductor which emits light in the infrared and at very low efficiencies .

硅材料具有资源丰富、价格相对低廉、禁带宽度较窄、生物无毒性等诸多优点，是最重要的半导体材料，同是也将是未来微纳米光电集成的基础材料。

Silicon is regarded as the most important semiconductive material , as well as the basic material of micro - or nano-scale opto-electronic integrated devices in the future , due to its excellent properties including rich resources , relatively low price , narrow band gap , biological non-toxicity .

SiC以其特有的大禁带宽度、高临界击穿场强、高电子迁移率、高热导率等特点，成为制造高温、高频、大功率、抗辐照及光电集成器件的理想材料。

Silicon carbide ( SiC ), which has large band gaps , high critical breakdown field strength , high electron mobility and good thermal conductivity , is considered as an ideal material to manufacture the optoelectronic integrated device with high temperature , high frequency , high power and radioresistance .