光电导

本篇只讨论强电场下的光电导响应。

The photoconduction response under strong electric field is discussed .

在夹心结构α-Si：H膜中的反常光电导响应

The abnormal photoconduction response of α - si : h films with sandwich structure

C（60）－PNVC光电导功能材料的形态与结构研究

Studies on the Morphology and Structure of C_ ( 60 ) - modified Poly-N-vinylcarbazole

Si（1－x）Gex合金的浅杂质光电导谱

Photoconductivity Spectroscopy for Shallow Impurities in Si_ ( 1-x ) Ge_x Alloy

NVC/BA共聚物的合成及其掺杂C（60）体系光电导性能研究

Synthesis of NVC / BA Copolymers and Studies of the Photoconductivity of C 60 - Doping NVC / BA Copolymers

溶胶-凝胶法制备ZnO薄膜光电导紫外光敏器件

Photoconductive UV Sensor Based on ZnO Films Prepared by Sol-Gel Method

在光电导材料和光折射材料等领域，C（60）掺杂型高分子有很好的应用前景。

C ( 60 ) - doped polymers can be applied in photoconductive materials , photorefractive materials , and so on .

若干菁染料对ZnO光电导的光谱增感的研究

The Effect of Spectral Sensitization of Photoconductivity for Cyanine Dyes on Zinc Oxide

硼轻掺杂对a-Si∶H光电导层性能影响的研究

Influence of Light-doped Boron on Characteristics of a-Si ∶ H Photoconductive Layers

Mg掺杂对GaN薄膜紫外光电导的影响

Effects of Mg doping on UV photoconductivity properties for GaN films deposited by MOCVD

氮的掺入能够改善a-Si∶H的光电导性。用ESR方法难以分析其原因。

Doping nitrogen may improve the photoconductivity of a-Si : H.

GaAs光导开关瞬态光电导效应的研究

An investigation of transient photoconductive effects of GaAs PCSS 's

半绝缘GaAs光电导开关体内热电子的光电导振荡特性

Characteristics of photoconductivity oscillation in semi-insulating GaAs photoconductive semiconductor switches

GaAs光电导探测器的双束质子改性

Modification of GaAs Photoconductive Detector by Double Proton Beam

提出了PC型半导体探测器对波段外激光辐照的热电子光电导响应机制。

The abnormal responsive mechanism of photoconductive semiconductor detectors irradiated by off-band laser , hot electron photoconductivity , was proposed .

响应波段外激光辐照PC型半导体探测器时，探测器有响应且输出电压信号迅速增大，与波段内激光辐照时的响应规律截然不同，这是由光激发能带内热电子而引起的光电导现象。

The response of a photoconductive semiconductor detector under off-band laser irradiation is different from that under in-band laser irradiation .

Zn（0.04）Cd（0.96）Te中深能级的红外光电导谱研究

Infrared photoconductivity spectra of deep levels in zn_ ( 0.04 ) cd_ ( 0.96 ) te

GaAs半导体中三光子吸收的非线性光电导测量

Nonlinear photoconductivity measurement of three-photon absorption in GaAs

用氩激光测量高激发下CdS单晶的光电导

Measurment of the conductivity of CDs crystal under intensive excitation using AR laser

激光/微波光电导衰减技术研究半绝缘GaAs复合寿命的分布

Study on Recombination Lifetime Distribution of SI GaAs by Laser / Microwave Photoconductance Decay Technique

用ps光电导采样技术测量微波单片集成电路的S参数

The Measurement of S parameter of a Microwave Monolithic Integrated Circuit by ps Photoconductive Sampling Technique

有机光电导（OPC）材料分子设计的研究

Study on the Molecular Design of Organic Photoconductive Materials

双层CdS／CdSe光电导薄膜的制作和光电特性

Preparation and properties of CdS / CdSe bilayer photoconductive films

用稳态光电导和场效应的联合测量研究Ge的快表面态

Investigation of the Fast Surface States of Ge by combined measurement of Steady Photoconductivity and Field Effect

瞬态光电导谱研究Pt的负载对TiO2光生载流子寿命的影响

Effect of Platinum Loading on Lifetime of Photogenerated Charge Carriers of TiO_2 Studied by Time-resolved Photoconductivity

a&SixC（1-x）：H的光致发光和光电导低温光诱导效应

Light-induced effects of PL and PC in a-si_xc_ ( 1-x ): h at low temperature

Bi（12）SiO（20）晶体暗电阻率与光电导率的测量

Measurement of Dark Resistivity and Photoconductivity for Bi_ ( 12 ) SiO_ ( 20 ) Crystal

采用磁控溅射和光刻工艺在SiO2/Si基底上制作Pt叉指电极，将单根纳米带组装在电极上，制备出基于单根纳米带的光电导半导体开关。

Radio frequency magnetron sputtering and photolithography were used to prepare Pt interdigital electrodes on the SiO2 / Si substrate .

用定态光电导及光磁电的方法测量了p型n型InSb在85&290°K之间的电子及空穴的寿命。

The carrier lifetimes of p-type and n-type InSb are measured by the stationary photo-conductive and photoelectromagnetic method in the temperature range 85-290 ° K.

通过建立势垒限制复合模型，解释了立方相GaN的持续光电导现象的物理过程，并对光电导衰减过程的动力学作了分析。

A barrier-limited model is developed to analyze the decay process , and the decay kinetics is discussed .