碲镉汞

该器件采用MBE碲镉汞薄膜材料、全平面离子注入成结工艺、Si－CMOS读出电路、倒焊互联混成、背照工作模式。

The device adopts MBE MCT thin film material , pan-planar ion implantation process which forms P-N junction , Si-CMOS readout circuit , hybird flip chip bonding interconnection and backside-illumination mode .

采用高像质、大光通量的折反式光学系统和闪耀光栅分光系统，通过多元碲镉汞探测器线列及电气系统，可同时检测目标温度及发射率。

By applying blazed grating and refractive reflected optical system with high image quality and throughput , the temperature and emissivity were available simultaneously by the MCT semiconductor sensor array and electric system .

碲镉汞材料的P、N型和其霍耳系数的正负

Study on the type of MCT and the sign of its hall coefficient

碲镉汞吸收缘以上E1和E2峰的指认

Designment of E 1 and E 2 transitions above absorption edge of HgCdTe

短波紫外光照射对n型碲镉汞探测器的影响

The effect of short wave ultraviolet radiation on N type Hg 1 - x CD x te detector

分子束外延碲镉汞薄膜中VOID缺陷的研究

Void defect of molecular beam epitaxial HgCdTe layer grown on GaAs substrate

通过形成能和态密度等手段分析了H间隙杂质对碲镉汞材料电学性质的影响。

The electronic property of interstitial hydrogen has been analyzed by the method of formation energy and density of state . 2 .

MS界面输运特性对碲镉汞光伏器件I-V特性的影响

Influence of MS interface transport on the current-voltage characteristic of MCT PV device

碲镉汞pn结中少数载流子寿命的测量

Measurement of Minority Carrier Lifetime in HgCdTe p-n Junctions

文章报道了Si基碲镉汞分子束外延（MBE）的最新研究进展。

The recent research development of Si / HgCdTe by MBE was reported .

布里兹曼法碲镉汞（Hg（1－x）CdxTe）晶体生长过程热场的数值分析

Numerical Analysis of Temperature Field in Bridgman Crystal Growth of Hg_ ( 1-x ) Cd_xTe

碲镉汞（MCT）材料是一种较为理想的红外光电子学材料。

HgCdTe ( MCT ) is a perfect infrared photoelectric material .

碲镉汞环孔P-N结理论分析与测试

The Theoretical Analysis and Testing of HgCdTe Loophole P-N Junction

垂直p-n结的碲镉汞光伏探测器暗电流特性分析

Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction

利用热场发射理论和数值计算方法，分析了碲镉汞光伏器件的电流-电压特性，提取了金属-半导体（MS）界面参数，并对这些参数进行了讨论。

The MS interface parameters are extracted from HgCdTe PV devices ' current voltage characteristic by applying Thermionic Field Emission ( TFE ) theory and numerical analysis .

它采用DRS冷却碲镉汞探测器技术，并且带有超长低温冷却器。

It uses DRS cooled Mercury Cadmium Telluride detector technology with ultra-long-life cryogenic coolers .

变磁场I-V法对碲镉汞光伏器件少子扩散特性的研究

Study on the minority carrier diffusion characteristic of HgCdTe diodes by I-V measurement in a variational magnetic field

用光电导衰退法和MIS器件的电容－电压特性测量研究了紫外辐照对碲镉汞样品的影响。

In this paper , the effect of the ultraviolet irradiation on the HgCdTe photoconductors is studied using the photoconductive decay method and the M IS capacitance - voltage measurement .

碲镉汞p-n结光电二极管稳态特性的计算机模拟

Computer simulation of the steady state characteristics of p-n junction photodiode for hg_ ( 0.8 ) cd_ ( 0.2 ) te

本文通过基于密度泛函理论的第一性原理方法系统研究了碲镉汞材料B、Be掺杂对材料的电子结构和电学性质的影响，为实验上B、Be在碲镉汞材料中的可控掺杂提供了理论分析基础。

Based on first-principles method within the framework of the density functional theory , we study the effects of B and Be doping on the electronic properties of MCT material . Our results provide corresponding theoretical basis for controllable doping in experiments .

利用SIMS和变温霍尔测量手段对p型Hg0.77Cd0.23Te液相外延材料的Ag掺杂技术、机理及掺杂碲镉汞材料的性能进行了研究。

SIMS ( secondary ion mass spectrum ) and variable temperature Hall measurement were employed to study the doping of Ag and the electrical properties of Ag doped HgCdTe films grown by LPE .

报道了用二次离子质谱分析（SIMS）方法对As在碲镉汞分子束外延中的掺入行为的研究结果。

Behaviors of As incorporation into HgCdTe in molecular beam epitaxy were studied and reported by using a SIMS ( Secondary Ion Mass Spectrometry ) quantitative analysis .

研究表明：紫外辐照使MIS器件的氧化膜／碲镉汞界面固定电荷减少，表面由强积累向平带变化；

It is shown that . the ultraviolet irradiation reduced the interface charge density of the anodic oxide - HgCdTe interfaces , thus the energy band is changed from strong accumulation to the near flat - band condition .

通过对近年来的部分文献资料进行归纳分析，介绍了碲镉汞焦平面器件CMOS读出电路（ROIC）的发展动态。

The development status of CMOS readout circuits ( ROIC ) of mercury cadmium telluride focal plane array devices were reviewed by summarizing and analyzing some papers published in recent years .

砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性

Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector

本文利用碲镉汞膺二元固液T-X相图对碲镉汞晶体生长方法进行了分类研究；

The HgCdTe crystal growth methods were classified by using HgCdTe pseudo binary T X phase diagram .

碲镉汞p-on-n光伏器件优化掺杂的理论计算

Theoretical calculation of doping optimization for p-on-n HgCdTe photodiode

获得了在240℃，380℃和440℃温度下As在碲镉汞材料中的扩散系数，并发现它与退火过程中Hg的分压有关，且Hg空位对As的扩散有明显的辅助增强作用。

The diffusion was investigated at various temperatures of 240 ℃, 380 ℃, and 440 ℃ . It was found that the partial pressure of Hg could influence As diffusion and Hg vacancies in epilayers assisted fast diffusion of As .

利用基于第一性原理的全电子势线性缀加平面波方法计算了在碲镉汞材料中Hg空位所引起的晶格弛豫以及空位对周围原子成键机制的影响。

Using the density-functional theory within the full-potential linear augmented plane wave method , we have calculated the influence of the mercury vacancy on the bonding mechanism and the relaxation effects in the Hg 0.5 Cd 0.5 Te ( MCT ) alloy .

利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。

Surface damage caused by cutting on Si , InSb , HgCdTe has been studied by Reflection High Energy Electron Diffraction ( RHEED ) after step-etching the samples .