碲镉汞探测器

碲镉汞探测器在高温目标下的光电倍增效应

Effects of photocurrent multiplication in HgCdTe photodiodes at high temperature target

文章报道了空间多光谱扫描仪红外波段多元光导碲镉汞探测器的研制与优值。

The development and figure of merit of photoconductive HgCdTe multielement detector used in multi-spectral scanner in thermal IR band are reported in this paper .

短波紫外光照射对n型碲镉汞探测器的影响

The effect of short wave ultraviolet radiation on N type Hg 1 - x CD x te detector

它采用DRS冷却碲镉汞探测器技术，并且带有超长低温冷却器。

It uses DRS cooled Mercury Cadmium Telluride detector technology with ultra-long-life cryogenic coolers .

砷掺杂基区n-on-p长波光伏碲镉汞探测器的光电特性

Electro-optical characteristics of arsenic-doped base region long-wavelength HgCdTe n-on-p photodiode detector

碲镉汞探测器制备湿法和干法工艺的研究进展电氧化法湿法分解辉钼矿工艺条件的研究

Developments of Wet and Dry Process Techniques for HgCdTe Detector Fabrication

由于材料性质比较敏感，碲镉汞探测器的制备一直是一项具有挑战性的任务。

Fabrication of mercury cadmium telluride ( HgCdTe ) devices has always been a challenging task due to sensitive nature of the material .

采用高像质、大光通量的折反式光学系统和闪耀光栅分光系统，通过多元碲镉汞探测器线列及电气系统，可同时检测目标温度及发射率。

By applying blazed grating and refractive reflected optical system with high image quality and throughput , the temperature and emissivity were available simultaneously by the MCT semiconductor sensor array and electric system .

垂直p-n结的碲镉汞光伏探测器暗电流特性分析

Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction

光伏型碲镉汞长波探测器暗电流特性的参数提取研究

Parameters extraction from the dark current characteristics of long-wavelength HgCdTe photodiode

γ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤

Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiation

20μm高灵敏浸没型碲镉汞红外探测器

High sensitivity immersed type HgCdTe infrared detector for 20 μ m

碲镉汞红外探测器的分步式阳极氧化新方法研究

New Method in Anodic Oxidation for MCT Infrared Detector

自扫描碲镉汞/CCD探测器阵列的红外热成象系统

Thermal IR imaging system using a self-scanned HgCdTe / CCD detector array , NASA

长波光导60元碲镉汞红外探测器通用组件

Long-Wave Photoconductive 60-Element HgCdTe Detector Common Module

从真空热浸和电流冲击两个方面对碲镉汞红外探测器进行了研究。

Vacuum baking and electrical current shock of HgCdTe IR detectors were studied in the paper .

针对不同波段的碲镉汞红外探测器在探测高温目标情况下的特性进行了研究。

The characteristic of different wave-band HgCdTe photodiodes has been investigated when detecting high temperature target .

报道了一种适用于碲镉汞长波光伏探测器的由典型电阻电压（R-V）曲线提取器件基本特征参数的数据处理途径。

An data-processing method was developed to obtain the device parameters from the resistance-voltage ( R-V ) characteristics measured in long-wavelength HgCdTe photodiode .

大面积光伏碲镉汞四象限探测器的设计考虑

Some Design Considerations for Large Area Photovoltaic HgCdTe Quadrantal Detector

皮秒脉冲激光照射下碲镉汞光伏红外探测器的负光伏响应新现象

Negative photovoltaic-responses in HgCdTe infrared photovoltaic detectors irradiated with picosecond pulsed laser

不同结构的碲镉汞长波光伏探测器的暗电流研究

Study of dark current for mercury cadmium telluride long-wavelength photodiode detector with different structures

碲镉汞红外双色探测器响应光谱研究

Spectral Study on response of HgCdTe IR two-color detector arrays

双色碲镉汞红外焦平面探测器发展现状

Trends in Two-color Infrared Focal Plane Detectors of MCT

碲镉汞是一种重要的红外光电子探测器材料，其禁带宽度在0～1.65eV范围内连续可调，基于碲镉汞材料的红外探测器可覆盖整个红外大气窗口。

HgCdTe is an important material for infrared electronic detector . HgCdTe-based infrared detector can cover the whole infrared atmospheric window due to its band-gap can vary continuously in the range of 0 1.65 eV .