光致发光光谱

利用光致发光光谱研究了Mg掺杂GaN外延片的光学性质。

Using photoluminescence spectra study optical properties of Mg-doped GaN epitaxial wafers .

制备的薄膜用X射线衍射谱、吸收光谱和光致发光光谱进行表征。

The films were characterized by the following techniques : X-ray diffraction , optical absorption spectra and photoluminescence spectroscopy .

溶胶-凝胶（sol-gel）法制作掺铒Al2O3薄膜及其光致发光光谱特性测量

Er-doped Al_2O_3 Thin Films Fabricated by Sol-gel Processes and Measurement of Photoluminescence Characteristics

热壁外延CdTe/（111）CdTe薄膜的光致发光光谱

Photoluminescence from cdte / ( 111 ) CdTe films grown by hot wall epitaxy

能够观察到ZnO量子点光致发光光谱（PL）的蓝移，即说明具有量子限制效应。

Room-temperature photoluminescence spectra reveal that the ZnO QDs exhibit a band gap blue shift because of the quantum confinement effects .

用X射线衍射、场发射扫描电镜及光致发光光谱研究制得薄膜的结构和发光性能。

The microstructure and photoluminescence property of the fabricated composite film were investigated by X-ray diffraction , field emission scanning electron microscopy and photoluminescence spectra measure - ment .

PPV的合成和光致发光光谱

Synthesis of Poly ( Phenylene Vinylene ) s and Measurements of Photoluminescence Spectra

通过X射线双晶衍射和光致发光光谱（PL）方法研究了InGaAsSb/AlGaAsSb应变量子阱激光器外延材料的基本性质。

Through X-ray double crystal diffraction and photoluminescence ( PL ) method of the InGaAsSb / AlGaAsSb strained quantum well lasers basic properties of epitaxial material .

研究一维ZnO纳米棒体系中，具有不同跃迁选择定则的双光子吸收和单光子吸收诱导光致发光光谱，揭示一维ZnO纳米体系中的能带结构。

To deeply reveal the energy band structure in well-aligned 1D ZnO nanorods , both one-photon - and two-photon-induced PL , with different transition selection rules , were performed in detail .

本文报道了在77K下测得溅射工艺制备非晶态硅的光致发光光谱，并与辉光放电工艺制得非晶态硅的光致发光光谱作了比较。

We measure the photoluminescence of sputtered amorphous silicon in comparsion with the amorphous silicon for glow discharge deposited at 77K .

用X射线衍射（XRD）、扫描电镜（SEM）、高分辨率透射电镜（HRTEM）和光致发光光谱（PL）对生成的产物进行了分析。

X ray diffraction ( XRD ), scanning electron microscopy ( SEM ), high resolution transmission electron microscopy ( HRTEM ), and photoluminescence ( PL ) are used to analyze the synthesized GaN nanorods .

得出结论：Cu+与ZnS的质量比为0.15%时，ZnS：Cu电致发光材料的光致发光光谱峰值最大，电致发光亮度最高。

We therefore conclude that the optimal value for Cu ~ + content is 0.15 % , which leads to the maximal peak of the photoluminescence spectra and the maximal brightness .

由量子点排列构成的量子线的光致发光光谱呈现出多峰结构，分析和理论计算表明这是InAs量子线上各量子点在垂直方向上不同高度分布和非连续性而造成的。

Theoretical calculation indicates that the multi-peaks structure was caused by the discontinuity and different height distribution along the vertical direction of InAs quantum dots .

采用溶胶-水热法合成了十二烷基苯磺酸钠（DBS）包覆的TiO2纳米粒子，并利用X射线衍射仪、透射电镜、表面光电压谱（SPS）和光致发光光谱（PL）等对样品进行表征。

The TiO_2 nanoparticles capped with sodium dodecylbenzenesulfonate ( DBS ) were synthesized by a sol-hydrothermal method , and were also characterized by XRD , TEM , Surface Photovoltage Spectroscopy ( SPS ) and Photoluminescence ( PL ) .

其中，含咔唑D单元的有机小分子供体材料C7和C8具有红移的紫外吸收光谱和光致发光光谱。

Among these A-D-A-based organic photovoltaic electron - donor materials , the C7 and C8 with a donor unit of carbazole showed a red-shifted UV absorption and PL spectra .

光致发光光谱表明，T-ZnO纳米线的光致发光除了与材料性质有关，还与杂质缺陷有关，蓝绿光带是ZnO的缺陷产生的。

Photoluminescence spectroscopy ( PL ) study was also employed , which indicated PL of zinc oxide related to both material property and defects of impurity , blue and green emission bands were originated from defects in ZnO .

采用溶胶鄄凝胶法制备了不同掺Sn量的TiO2纳米粒子，主要利用表面光电压谱（SPS）和光致发光光谱（PL）对样品进行了表征，并通过光催化降解苯酚实验来评估样品活性。

In this paper , different Sn doped TiO2 nanoparticles were prepared by a sol-gel method , and were mainly characterized by surface photovoltage spectrscopy ( SPS ) and photoluminescence spectroscopy ( PL ) . The photocatalytic activity of the as-prepared samples was evaluated by degrading the phenol solution .

以苯并噻二唑为A单元，以芴和咔唑为D单元的A-D-A型有机小分子光伏材料C7-C10，同样具有良好的热稳定性能，以及相似的紫外吸收光谱和光致发光光谱。

The organic photovoltaic electron-donor materials of C7-C10 with an A-D-A structure , which contain two acceptor units of benzothiadiazole and a donor unit of fluorene or carbazole , also exhibited excellent thermal stability , as well as similar UV absorption and PL spectra .

InAs/GaSbⅡ型超晶格的拉曼和光致发光光谱

Raman and photoluminescence spectra on type ⅱ InAs / GaSb superlattices

氧与激光辐照对多孔硅光致发光光谱的影响

Effect of oxygen and laser illumination on Photoluminescence of porous silicon

应力和掺杂对Mg：GaN薄膜光致发光光谱影响的研究

Effects of strain and Mg-dopant on the photoluminescence spectra in p-type GaN

氧化锡纳米线的拉曼光谱和光致发光光谱研究

Study on Raman Spectra and Photoluminescence of SnO_2 Nanowires

结果表明，所采集到的是拉曼光谱和光致发光光谱的叠加。

It shows that the collection is superposition of Raman and photoluminescence spectrum .

相对强的激光聚焦有利于获得较好的光致发光光谱。

( iii ) Excitation with relatively stronger focus produces better PL spectrum .

其光致发光光谱表明其发光机理比较复杂。

The results of PL spectra indicated the emission mechanism was very complex .

射频溅射a&Si：H的光致发光光谱

Photoluminescence Spectra of RF Sputtered a-Si : H

利用紫外光谱和荧光光谱对1配合物的吸收光谱和光致发光光谱进行了研究。

The UV - vis absorption 1 and photoluminescence of the complex were investigated .

激光光致发光光谱分析系统的设计及应用

Design and Application of Laser Photoluminescence Analysis System

测量了纳米树叶的室温光致发光光谱，得到强的紫外发射和很弱的可见发光。

The room temperature photoluminescence of this sample shows a strong ultra-violet emitting and relatively week visible emitting .

制备得到的硫化锌纳米线室温下的光致发光光谱通过高斯拟合可得到4个发光峰。

Room-temperature photoluminescence curves of the as-synthesized ZnS nanostructures show four peaks that were analyzed by Gaussian fitting .