肖特基势垒二极管

Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应

Gamma-ray radiation effect on Ni / 4H-SiC SBD

SiC肖特基势垒二极管在PFC电路中的应用

Application of Power Factor Correction Circuits with SiC-Based Schottky Barrier Diode

研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。

Schottky barrier diodes with different metal on III nitride have been fabricated .

Ni（Zr）Si薄膜热稳定性及其肖特基势垒二极管的电学特性

Investigation On Thermal Stability of Ni ( Zr ) Si Thin Film and Electrical Characteristics of Its Schottky Barrier Diode

4H-SiC肖特基势垒二极管伏-安特性的解析模型

Analytical model for I-V characteristics of 4H-SiC Schottky barrier diodes

InAs量子点在肖特基势垒二极管输运特性中的影响

The influence of InAs quantum dots on the transport properties of Schottky diode

在VLSI工艺中实现同时完成钛硅化物欧姆接触和肖特基势垒二极管（SBD）的制作。

Ti silicide ohmic contact and Schottky contact can be obtained at the same time in VLSI process .

3mm肖特基势垒二极管雪崩噪声源

Avalanche noise source of Schottky barrier diode in the 3 mm band

4H-SiC肖特基势垒二极管温度特性研究

Temperature Characteristics of 4H-SiC Schottky Barrier Diodes

PtSi／n&Si肖特基势垒二极管的研制

Study and Manufacture of PtSi / n-Si SBD

在77到292K的范围内，系统研究了含InAs自组装量子点的金属半导体金属双肖特基势垒二极管的输运特性。

In the temperature range from 77 to 292 K , we investigated the transport properties of metal-semiconductor-metal diode containing InAs quantum dots .

采用两个GaAs肖特基势垒二极管反向并联的结构实现三次倍频的方案，这种平衡倍频电路结构能够将输入频率的偶次谐波抵消掉，从而大大降低电路中的杂波量。

GaAs Schottky barrier diodes which constitutes anti-parallel pairs structure was used to realize the frequency tripler . Balanced Frequency tripler can suppress the even-order harmonics so effectively that the amount of clutter has been greatly reduced .

采用N2O氮化氧化技术制备氮化氧化物作为绝缘层制备金属-绝缘体-SiC（MISiC）肖特基势垒二极管（SBD）气体传感器的技术，对传感器的响应特性进行了研究。

A metal-insulator-n-type 6H-silicon carbide ( MISiC ) Schottky-barrier-diode ( SBD ) gas sensor with thin N 2O-grown oxynitride as gate insulator has been fabricated and studied .

从工程实际出发，分别建立了肖特基势垒二极管（SBD）二态模型和肖特基钳位三极管（SCT）四态模型的电路模型，分析并研究了这两个典型的应用电路。

From the engineering requirements , 2 state models for the schottky barrier diode and 4 state models for the schottky clamped transistor have been set up . Two typical circuits are analyzed and researched .

对硅化钯-P型硅肖特基势垒二极管（SBD）的界面性质作了AES谱和EBIC像分析，估算了PdxSiy层厚度和肖特基结的结深。

The interface property of palladium silicide-silicon ( P-type ) Schottky Barrier Diode ( SBD ) has been studied by AES spectrum and EBIC image . The thickness of Pd_x Si_y layer and the deepness of schottky " junction " are estimated .

Al/TiSi2/Si系统与肖特基势垒二极管的热稳定性

Thermal Stability of Al / TiSi_2 / Si System Schottky Diodes

硅化钯-P型硅肖特基势垒二极管的界面分析与电特性

Interface analysis and electric characteristics of palladium SILICIDE-P-TYPE Silicon Schottky barrier diode

肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。

Schottky Barrier Diode ( SBD ) is based on the rectification characteristics of metal-semiconductor contact .

以肖特基势垒二极管为例，应用该方法，实现了高接触势垒情形下的正反向电流模拟。受电弓&接触网系统电接触特性研究

As an example , Schottky barrier diode characteristics is simulated using this method . Study on the Characteristics of Electric Contact between Pantograph and Overhead Contact Line

根据实验结果，结合实际工艺条件，本文研制了具有结终端场限环保护的高压Mo/4H-SiC肖特基势垒二极管，根据实验结果指出此种平面结终端保护结构是很有效的。

According to the simulation results , combined with the actual process conditions , this paper developed a junction termination field limiting ring protected the high pressure Mo / 4H-SiC Schottky barrier diodes based on experimental results indicate that such planar junction terminal protection structure is very effective .

肖特基势垒二极管作为一种多子器件具有很高的开关速度，但是要做到耐压很高就需要降低漂移区载流子的浓度，从而使正向导通电阻很大。

Schottky barrier diode as a majority carrier device with high switching speed has been widely used in power circuit . But , in order to achieve high breakdown voltage , the concentrate of the drift region need to be lower enough , and the specific on-resistance improved a lot .

本论文研究由金属与C（60）富勒烯材料形成的肖特基势垒接触二极管。

In this thesis , we aimed our research at metal-C_ ( 60 ) Fullerene Schottky barrier contact , which is the typical structure of C_ ( 60 ) diodes .

毫米波肖特基势垒混频二极管本征噪声温度测试评价

Measurement and review of intrinsic noise millimeter Schottky mixer diode

多晶铁电半导体晶界处的肖特基势垒肖特基二极管异常击穿特性曲线的研究

The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors Abnormal Breakdown Diagram of the Schottky Barrier Diodes

本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。

In this paper , a new method of complete calibration of six port measurement system is presented which uses the low barrier Schottky diode detectors for power detection .

对微波肖特基中、低势垒二极管硅化物的工艺技术进行了研究。

This paper describes techniques research of microwave schottky silicide barrier diodes .

计算结果表明，肖特基接触下串联电阻是肖特基势垒二极管总电阻的重要组成部分，是不能忽略不计的。

The results showed the series resistance under the Schottky contact is an important part of the whole SBD resistance , and can not be neglected . 2 .

采用微电子平面工艺，高真空电子束蒸发金属Au做肖特基接触，多层金属Ni、Ti、Ag合金在背底上做欧姆接触，制作出Au／n-4H-SiC肖特基势垒紫外光电二极管（Uv-SBD）。

With microelectronics plane technology , electron beam evaporation is used to deposit metal Au on the surface of n-4H-SiC to form Schottky contact , alloys Ti . Ni . Ag used to form Ohmic contact on the n + backside , the Schottky barrier ultraviolet photodiode has been fabricated .