硅材料
- 网络silicon;Silicon material
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连续CO2激光熔凝太阳能硅材料
CW co_2 laser melting and coagulating of solar silicon material
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SiC材料具有许多优于硅材料的优良性质,已成为国际上新材料、微电子和光电子领域研究的热点。
Due to possessing excellent properties excelling silicon material , SiC material is becoming a research hotspot of new materials , microelectronic and photoelectron .
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以硅材料为基础的微机电系统MEMS被人们认为是21世纪革命性的新技术,是实现信息采集、处理、执行一体化,使之成为真正的系统。
The new technology MEMS based on silicon integrate the collection , process and executing of the information .
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采用XRD、IR、SEM、N2吸附曲线等测试手段对经540℃热处理后的介孔氧化硅材料的结构进行了表征。
Then the characteristics of silica samples after calcination at540 ℃ were investigated using XRD , IR , SEM , N2 adsorption technique .
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SF6/O2/CHF3混合气体对硅材料的反应离子刻蚀研究
Study on Reactive Ion Etching of Silicon in SF_6 / O_2 / CHF_3 Mixtures
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把这种高速生长的微晶硅材料用作太阳电池的本征吸收层,在没有优化工艺参数和没有采用ZnO增反电极时,电池的转换效率达到4.8%。
Using this intrinsic microcrystalline silicon film as absorber layer in single-junction solar cell , a conversion efficiency of 4.8 % was obtained .
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本文报道了采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法制备高电导、高晶化率的p型微晶硅材料的结果。
The results about highly-crystallized , highly-conductive p-type microcrystalline silicon (μ c-Si : H ) prepared by high-pressure RF-PECVD are reported in this paper .
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发现使用CMC水性粘结剂体系代替传统的PVDF体系粘结剂能够有效的提高纯硅材料的循环性能,而对于碳包覆硅纳米材料,使用PVDF粘结剂时效果较好。
Discovered that cycle properties of pure silicon could be improved when using CMC of water-based adhesive system instead of the traditional PVDF .
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激发频率对VHF-PECVD制备微晶硅材料性能的影响
Effect of excitation frequency on microcrystalline silicon materials prepared by VHF-PECVD
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VHF-PECVD制备微晶硅材料及电池
Microcrystalline Silicon Material and Solar Cells Fabricated by VHF-PECVD
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方法:1、直接购买氨基改性前的介孔硅材料SBA-15,观测其形态、红外光谱图像、吸附-脱附能力,用于载药研究。
Purchased mesoporous silicon material SBA-15 , observed its morphology , IR images , adsorption-desorption capacity for drug research . 2 .
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本文以阳离子表面活性剂&正十六烷三甲基溴化铵(CTAB)为结构模板剂,在强酸性条件下,通过水热反应合成了纯的介孔氧化硅材料。
In this thesis , the pure mesoporous silica were synthesized through water-thermal reaction by using cationic surfactant cetyltrimethyl-ammonium chloride ( CTAB ) as template under strong acid condition .
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针对这些不足,为了在无保护层条件F减缓硅材料在水溶液中的钝化,同时提高硅的光催化氧化能力,采用电化学刻蚀法制备了大孔表而密布纳米孔的分级多孔硅。
Therefore , in order to inhibit passivation of silicon in aqueous solution without protective layer and to enhance the photocatalytic oxidation ability , hierarchically porous silicon was fabricated through electro-assisted chemical etching using a silicon wafer as a substrate .
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通过实验研究表明,大功率CO2激光器在廉价硅材料制备中应用的可能性。
Application of high power CO2 Laser in the field of cheap silicon preparation was discussed in this paper . Some research work has been done . The crystallization and purification of the laser smelting silicon were analysed .
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由于以上众多优点,以嵌段共聚物作为结构导向剂合成的介孔氧化硅材料SBA-15及其相关材料成为近年来的研究热点之一。
Because of the above numerous advantages , the mesoporous molecular sieve SBA-15 synthesized by using triblock copolymers as structure directing agents as well as its correlative materials are becoming one of the research focuses in recent years .
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因此在设计中,选用了具有低噪声基底、高截止频率(70GHz)、高集电极电流容量的锗化硅材料的NPN晶体管,有利于提高系统的噪声性能。
The low phase noise potential of K-band VCO using NPN silicon-Germanium transistor with low noise floor , high cut-off frequency ( 70GHz ) and high collector current capacity has been studied in detail .
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本文认为,制作高效率太阳电池的硅材料,除常规要求外,还应对其深中心浓度有严格的要求,即DLTS谱中不出现明显的谱峰。
More strict requirements have to be imposed on the deep level centers so that the solar cell efficiency will not be seriously deteriorated , that is , no obvious peaks should be allowed to appear in the DLTS spectrum .
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硅材料作为锂离子电池负极材料其理论比容量高达4200mAhg-1,但在充放电过程中,其会发生巨大的体积膨胀和收缩,从而阻止了实用化进程。
The theoretical capacity of silicon anode material of lithium-ion battery is up to 4200 mAh g-1 . However , this material undergoes the pulverization arising from its volume expansion and contraction during lithium insertion and extraction , which greatly hinders its commercial application .
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多晶硅(p-Si)材料与非晶硅材料相比较具有迁移率高、易于掺杂、适用于周边驱动电路集成等特点,已成为TFT器件材料新的研究方向。
Comparing to a-Si material , polycrystalline silicon ( p-Si ) material has higher mobility and is prone to be adulterated , and it is fit for making peripheral integrated chip . Owing to those merits , p-Si has become a new material of TFT to be researched .
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在激光波长1.06μm、能量15mJ、光斑直径2mm、脉冲半峰全宽约10ns和入射方向为布儒斯特角的条件下,进行了脉冲激光辐照硅材料形成表面波纹的实验研究。
Experimental research on the surface ripple with Si material irradiated by pulsed laser , is carried out with 1.06 μ m laser wave length , 15 mJ energy , 2 mm spot diameter , about 10 ns pulse width and Brewster angle incidence .
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化学在半导体硅材料制造业的作用与展望
Application of Chemistry in Semiconductor Silicon Material Manufacturing and Its Prospects
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氧化硅材料光活性缺陷中心研究进展
Progress in studies on the optically active defect center in silica
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环境湿度下硅材料表面的黏着与黏滑机理
Pull-off Force and Stick-Slip Properties of Silicon Surface Under Environmental Humidity
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铜银改性六方介孔硅材料的结构及抗菌性能
Structure and antibacterial ability of copper / silver-modified hexagonal mesoporous silica
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强激光辐照下硅材料的温度分布研究
Study of Thermal Distribution of Silicon Materials Irradiated by High Power Laser
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高压低温制备硅材料的性能研究
Study on performance of silicon material prepared by high pressure low temperature
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多层复合结构应变硅材料的生长和特性
The growth and quality evaluation of strained Si material with multilayer structure
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温度对氮化硅材料动态疲劳特性的影响
Effect of Temperature on Dynamic Fatigue Behaviour of Si_3N_4 Material
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强激光辐照硅材料等离子体机理研究
Study on the Mechanism of the Si Plasma Induced by High-Energy Laser
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同时还尝试了介孔氧化硅材料在分离方面应用的研究。
Meanwhile , the application of mesoporous materials in separation is attempted .