硅单晶片

本文采用磁控溅射技术，用纯度为99.9%的银板作为靶材，用厚度为1mm经表面清洁处理后的（111）取向的硅单晶片作为衬底，制备了厚度约为2μm的银薄膜。

In this paper , the Ag thin films were deposited on single-crystal ( 111 ) - Si wafer by magnetron sputtering . The thickness of Ag films was 2 urn .

硅单晶片镜面吸附物吸附状态的研究

Investigation on Adsorption State of Surface Adsorbate on Silicon Wafer

硅单晶片研磨液的研究

Study on Grinding Fluid for Silicon Wafer

概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。

The quality requirements on Si wafer for modern ULSI , research progress on CZ Si crystal growth technology and wafer processing , the market situation and prospect were outlined .

随着半导体行业的迅猛发展，芯片的集成度不断提高，作为衬底材料的硅单晶片的尺寸要求越来越大，特征尺寸越来越小，因此，高精度硅片的加工便成为当中的关键因素。

The dimension of silicon substrate become more and more bigger and the characteristic dimension go diminishing with the development of IC . Therefore , high-precision wafer processing has become the key factor .