玻尔兹曼分布

  • 网络boltzmann distribution
玻尔兹曼分布玻尔兹曼分布
  1. 利用本文计算隧穿几率的方法,采用费米分布代替常用的玻尔兹曼分布优化了SiC肖特基结的电流输运模型。

    The model of SiC schottky contacts is optimized in which Femi distribution is adopted instead of Boltzmann distribution based on the tunneling probabilities calculated with the presented method .

  2. 应用碰撞理论和玻尔兹曼分布计算了CH4被高能电子裂解为CH3,CH2,CH和H等自由基的速率常数与电子温度的关系。

    The relation between electronic temperature and rate constants in dissociation of CH_4 by high energy electron into CH_3 , CH_2 , CH and H etc. was calculated through Boltzmann distribution and collision theory .

  3. 使用约化摄动法得到了描述含有尘埃颗粒电荷变化、非热力学平衡离子和玻尔兹曼分布的电子的热尘埃等离子体中尘埃声波修正的KdV(mKdV)方程。

    Using the reductive perturbation method , a modified KdV ( mKdV ) equation is obtained , which describes the dust acoustic waves in a hot dust plasma with dust charge variation , non-thermal distributed ions and Boltzmann distributed electrons .

  4. 麦克斯韦&玻尔兹曼分布的简单推导与应用

    A simple deduction and application of Maxwell-Boltzmann distribution

  5. 从理论上讨论了局部非玻尔兹曼分布公式以及分布曲线弯曲时的拐点能量。

    The formula of the non-LTE Boltzmann distribution and the corresponding bottleneck energe is also discussed .

  6. 对玻尔兹曼分布说明的探讨

    A discussion on Boltzmann distribution

  7. 视一维单原子链中原子为谐振子,运用玻尔兹曼分布给出了空位的一种新统计方法。

    The article simplifies the atom of one-dimensional monatomic chain as resonator , and pro vides a new statistic method of its Vacancy through Boltzmann distribution .

  8. 本文给出几种论证玻尔兹曼分布、使物系微态数的对数取极大值的严谨方法。

    In this paper , some strict methods are given which show that the logarithm of microstate numbers of a system attains its maximum corresponding to Boltzmann distribution .

  9. 应用玻尔兹曼分布定律证明了范特霍夫渗透压公式、开尔文公式、胶体粒子沉降平衡公式等与粒子在外力场中分布有关的基本公式,模型清晰,方法便捷。

    The basic formulas about particles distribution under outside force fields , such as Van 't Hoff formula , Kelvin formula and sedimentation equilibrium formula of colloid have been proved by using Boltzmann distribution law . The moulds are clear and the method is simple and convenient .

  10. 对于高频时MOS结构电容的理论计算,提出了第二个假设,在φ≤φ(min)区间,少数载流子浓度遵从玻尔兹曼统计分布。

    For the analytical calculation of MOS capacitor in high frequency case , the second assumption is proposed : At j ≤ j_ ( min ), the density of minority carriers is given by Boltzmann statistics .

  11. 玻尔兹曼统计分布律推导的新方法

    New Method on Deriving Boltzmann Statistical Distribution Law