漂移速度

碳化硅（SiC）是一种具有较大的电子饱和漂移速度、高临界击穿电场和高热导率的宽禁带化合物半导体材料。

Silicon carbides ( SiC ) are a kind of wide bandgap compound semiconductor material which have greater saturated electron drift velocity , higher critical breakdown electric field and higher thermal conductivity .

用高速动态分析仪测量不同含水率β下，滞止油水乳化液中弹状流流型时Taylor气泡的漂移速度。

Taylor bubbles drift velocity at various rates of water content in stagnant oil water emulsion and under a slug flow regime was measured with the use of a high speed dynamic analyzer .

GaAs中的电子迁移率是Si中电子迁移率的6倍，其电子峰值漂移速度是Si的2倍，因此，GaAs器件具有比Si更优越的性能。

The electronics mobility in GaAs is six times the mobility of electronics in Si .

结合宏观和微观模型，分别模拟计算有效漂移速度V（f）线形对GaAsAlAs掺杂弱耦合窄垒和宽垒超晶格纵向输运的影响。

Vertical transport in doped GaAs / AlAs superlattice with weak coupling is simulated by combining the macroscopic model and the microscopic one .

测得马赫数M为0.086，电子温度Te为5eV，等离子体漂移速度约为297m／s。

The results are : Mach number is 0.086 , electron temperature is 5 eV , plasma flow velocity is 297 m / s.

第三代半导体材料碳化硅（SiC）由于具有宽带隙、高临界击穿电场、高热导率以及高载流子饱和漂移速度等优异特性，而广泛应用于高温、大功率、高频、抗辐射等领域。

Silicon Carbide is being intensely pursued around the world for high temperature , high power , high frequency and high radiation applications because of its wide bandgap , high electric field strength , high saturation electron velocity and high thermal conductivity .

半绝缘SiC由于其宽禁带、高临界击穿电场、高电子饱和漂移速度、高热导率等优良特性，使其非常适合作为大功率光导开关的基体材料。

Semi-insulating silicon carbide ( SiC ) is an attractive material for application as power compact photoconductive semiconductor switches ( PCSS ) due to its large band gap , high critical electric field strength , high electron saturation velocity and high thermal conductivity .

SiC材料具有宽禁带、高临界击穿电场、高热导率、高载流子饱和漂移速度等优良特性，这些特性决定了它在高温、大功率、高频和抗辐照等领域的有着广泛的应用前景。

Silicon carbide ( SiC ) has great potential application of high temperature , high frequency , high power and irradiation domains for its superior properties , such as wide bandgap , high conductivity , high saturated electron velocity and high critical breakdown field .

SiC材料由于具有宽禁带、高临界击穿电场、高饱和电子漂移速度、较大的热导率等优良特性，因此成为制作高温、高频、大功率器件的理想半导体材料。

Silicon Carbide is becoming the most promising semiconductor material for high temperature , high frequency and high power devices because of its superior properties such as wide band gap , high breakdown field , high electronics saturation drift velocity , and high thermal conductivity .

碳化硅（SiC）禁带宽、临界击穿电场大、热导率高、电子饱和漂移速度快，在高温、高频、高辐射环境下有广阔的应用前景。

Silicon Carbide ( SiC ) has wide applications in high temperature , high frequency and high radiation environment because of its superior properties , primarily its wide band gap , high critical breakdown field , excellent thermal conductivity and high electron saturation drift velocity .

GaN是大功率和高温半导体器件的理想化合物半导体材料，具有宽禁带、高击穿电压、异质结沟道中高峰值电子漂移速度和高薄层电子浓度。

The group ⅲ - ⅴ nitride materials are ideal for high power and high temperature devices with their large energy band-gap , high breakdown voltage , high peak electron velocity and high electron sheet density in channels when used in a heterostructure .

AlGaN/GaNHEMT由于具有击穿电压高、电子漂移速度快和电子浓度大等特点，已被越来越多地应用于高频及大功率领域。

AlGaN / GaN HEMT has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields .

AlN是一种重要的半导体材料，由于具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等优越的特性，在微电子和光电子领域具有广泛的应用前景。

As an important semiconductor material , AlN has a bright future in the microelectronic and optoelectronic fields with its unique combination of properties such as wide bandgap , high breakdown field , high thermal conductivity and high saturated electron drift velocity .

主要叙述了在金刚石镀膜装置中，利用平行马赫探针测量了沉积室中的等离子体漂移速度，采用了Hutchinson的流体力学模型分析了数据。

The article discusses the use of parallel Mach probe to measure plasma flow velocity in deposit room of depositing diamond film device and the use of the fluid dynamics of Hutchinson to analyze the data .

综合已求出的CMONOC三期数据的单天解结果，通过传统漂移速度估计数学模型获得中国大陆基准站水平形变速度场。

Combining three periods of single-day solution results , the horizontal deformation velocity field of fiducial stations of Chinese mainland was made out through the traditional mathematical model of floating velocity estimation .

4H-SiC电子迁移率较高且各向异性较小，温度为296K时得到的横向电子饱和漂移速度为2.18×107cm/s；

4H-SiC has a higher electron mobility with much less pronounced anisotropy . At 296K , the saturation velocity for transport perpendicular to the c axis given by the model is 2.18 × 10 ~ 7cm / s.

该解是Swadesh〔1〕结果的推广，它既适用于高温聚变等离子体，也适用于有相对论漂移速度的等离子体。

This solution is an extension of the result obtained by Swadesh [ 1 ] , and is not only of interest to the high-temperature fusion plasma , but also of interest to the plasma which have relativistic drift velocities .

测出了存选定的实验条件下，膜中电解质离子的平均漂移速度。

The average migration rate under the experimental conditions was measured .

金刚石镀膜装置上的等离子体漂移速度的测量

Measurement of the plasma flow velocity on the deposit diamond film device

电子的漂移速度则随温度升高而降低。

The drift velocity of electrons decreases with increasing temperature .

可以通过谱曲线的第一个极小值频率得出不规则的漂移速度。

So the drift velocity can be got though the first minimum .

油水乳化液中长气泡漂移速度的研究

A Study on the Drift Velocity of Long Bubbles in Oil-water Emulsion

强流脉冲电子束二极管等离子体漂移速度的研究

Investigation of plasma drift velocity vs time in intense electron beam diode

漂流卡与原油膜漂移速度的实验研究

An experimental study on the drifting speeds of card and raw oil film

具有PTF>1及均匀载流子漂移速度的硅雪崩二极管的理论分析

Theoretical Analysis of Silicon Avalanche Diodes with PTF > 1 and Uniform Carrier Drift Velocity

结果表明，不同的方法得出的漂移速度有一定差异。

The results show that there were difference the drifting velocity of using different methods .

双频交流电场对超晶格中电子漂移速度的影响

The Effect of Bichromatic AC-Electric Field on the Drift Velocity of Electrons in the Semiconductor Superlattice

进一步分析其闪烁功率谱，计算出了不均匀体的东向平均漂移速度。

Moreover , average eastward drifting velocity of the irregularities is calculated by the spectrum analysis .

电子漂移速度检测器

Ectron drift velocity detector

在平均漂移速度-电场特性中发现了微分负阻效应。

An important feature of the velocity-field characteristics is a differential negative resistance effect in steady state electron drift velocity .