基极

在双极型晶体管EM2模型参数中引入的基极电阻r'b是重要的也是较难测量的参数之一。

The ohmic base resistance of bipolar transistor introduced in EM_2 Model is a very important parameter .

GaN基蓝光发光二极管正向电压温度特性研究发射极基极二极管

Temperature characteristics of the forward voltage of GaN based blue light emitting diodes

本文介绍了一种对PWM逆变器中晶体管基极驱动开路故障的检测和隔离的方法。

This paper presents a method of detection and isolation on a pulsewidth modulation inverter supplying a asynchronous machine .

PNP型HBT基极接触阻抗的理论估算

Theoretical Calculation of Base Contact Impedance of PNP Type HBT

本文针对基极电阻随电流变化的实验事实，根据基区电导调制效应，提出了工作在大电流密度水平时，基极电阻RB（IB）的理论模型；

A theoretical model is presented to determine the current dependence of base resistance RB ( IB ) of bipolar transistor at high current , based on the effect of base conductivity modulation .

本文介绍了为异步电动机PWM变频调速系统而研制的GTR基极驱动电路。

In this paper GTR Base-drive circuits on PWM variable frequency and variable speed systems for induction motor drive are studied .

同时，基极串联电阻Rb将会减弱器件的抗微波损伤能力。

Moreover , the series resistance at the base resistance Rb will weaken the capability of the device to withstand microwave damage .

提出了一种新的适合于低精度直流调速的H型PWM变换器功率晶体管基极驱动方式，采用PWM方式成功实现了对机器人行走电机的速度控制。

We bring forward a new base-poll driving method for gigantic transistors in H-type PWM converter and by adopting PWM method , successfully complete rotate speed controlling for the walking electromotor .

器件结构是双基极、双集电极npn晶体管。

The device is constructed with a double base , double collector npn transistor .

提出一种基于DC/DC变换器IC大功率晶体管模块的基极驱动电路，减小了驱动损耗，简化了驱动电路与工艺。

A base drive circuit based on IC high power transistor module of DC / DC converter is presented , which reduces drive consumption , also simplifies drive circuit and the technics .

频率、基极电流、集电极电流、发射极几何尺寸（面积、条长）、Ge组份x、温度等诸多因素都对低频噪声有影响。

Many factors , such as frequency , base current , collector current , geometry size ( emitter area and length ), Ge fraction and temperature , will have influence on low-frequency noise characteristics .

本文介绍为航空静止变流器中的直流变换器而研制的GTR基极驱动电路。

This paper describes a new base drive circuit for GTRs in DC / DC converter of the aeronautical engineering .

由于IGBT中含有宽基极、低增益的晶体管，因此采用双极性传输方程来描述IGBT电流，以此作为模型的物理基础。

Because the structure of IGBT includes a wide base , low gain BJT , use a bipolar transport equation to describe the current of IGBT as the physics base .

与普通硅衬底相比，采用绝缘型衬底制备SiGeHBT可以获得较高的基极-集电极击穿电压，较高的厄利电压和最大震荡频率。

As compared to bulk SiGe-HBT , SiGe HBT on the isolated type substrate have a higher Early voltage , maximum oscillation frequency , and breakdown voltage .

由于FFJ的发射极-基极结电容仅仅取决于它的发射极掺杂情况，因此，可以同时得到较小的基极电阻rb和较高的发射极截止频率f（TE）。

The emitter-base junction capacitance of the FFJ is only decided by it 's emitter doping profiles , so that both smaller base resistance rb and higher emitter cutoff frequency can simultaneously be obtained .

基于0.35μmSiGeBiCMOS工艺，设计了共基极和共发共基两种输入结构的前置放大器。

Based on a 0.35 μ m SiGe BiCMOS technology , two types of preamplifier were designed by using common-base and common-emitter plus common-base input stage respectively .

给出了非合金接触情况下，PNP型HBT基极比接触电阻和接触阻抗的解析计算方法和结果。

In this paper , we proposed a theoretical method and results for calculating special contact resistance and contact impedance of base contact of a PNP type HBT .

主要介绍静电感应晶体管、电荷调制器件、体电荷调制器件、基极存储图象传感器、增强MOS图象、CMOS等有源象素图象传感器的新进展。

In the paper the recent development of static induction transistor , charge modulation devices , buck charge modulated device , base stored image sensor , amplified MOS image and CMOS active pixel sensors are emphatically described .

计及基极电流非理想因子n的影响，引入了禁带宽度视在变窄量△E（8a）的概念，提出了描述h（FE）温度特性的理论模型。

Taking into account the effect of non-ideal factor n in the medium current range a concept of the " apparent amount of bandgap narrowing " is introduced and a theoretical model of the current gain hFE temperature dependence is presented .

本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。

We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer .

当开环情况发生时，Q3通过射-基极连接隔离整个回路电流，而通过680Ω电阻接到运放。

When an open-loop condition occurs , Q3 shunts the entire loop current back through its emitter-base junction and through the680 Ω resistor to the op amp .

选用自偏置电流源为cascode增益结构提供基极偏置电流，并根据ADS仿真出的基极电流IB与最小噪声系数NF的关系曲线，确定使NF较小的偏置电流。

The self-bias current source is selected to provide the base biascurrent of cascode gain structure . According to IB-NF curve in ADS simulation , the bias current is determined to achieve the lower noise figure .

该薄膜磁阻系数ΔR/R≥9%，全金属自旋晶体管试样集电极电流变化MC>587%（常温），且其性能随基极Ag层厚度减小而增强。

It 's coefficient of magneto-resistance is Δ R / R ≥ 9 % , the coefficient of collector current amplify is MC > 587 % ( in room temperature ) . The properties of spin transistor increase as the base thickness decreasing .

基于非选择性外延，基极/发射极自对准和集电区选择性注入，提出了一种可用于1.5μmSiGeBiCMOS集成的HBT器件结构及其制作流程。

Based on the non-selective epitaxy , self-aligned base / emitter and selective implanted collector , a kind of SiGe HBT structure for 1.5 μ m BiCMOS integration and corresponding process flow is presented .

本文功率放大器设计的创新点在于：1.基极稳定电阻采用每一只HBT与一个电阻串联的结构，电阻值大小适宜，减小了工艺误差对功率放大器性能的影响。

A new structure of base stability resistor is used , which each HBT is in series with a base stability resistor . The resistors have appropriate resistance that reducing the influence of the process error . 2 .

对共基极YIG调谐振荡器的起振条件，在简化假定下作了讨论，求出最大可调频宽时基极电感最佳值。

Under a simple hypothesis , the conditions of oscillation for the common base YIG-tuned oscillator are discussed , and the optimal inductance of the base is found when the tuned band-width is the maximum .

当ILOAD超过最大允许值时发生过载情况，R6上的电压增大导致基极-发射极电压足够大到导通Q2。

In the event of an overload when ILOAD exceeds its maximum permissible value , the increase in voltage across R6 results in sufficient base-emitter voltage to turn on Q2 .

与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。

The ratio of effectual emitter area to base area of a FFJ is2-3 times greater than a usual transistor and the output power-impedance product is5-10 times greater .

Zr-4合金板在a相高温区轧制时，{10`11}`2113和{11`21}`2113锥面滑移是主要的形变系统，所以轧制后形成基极取向集中于轧面法向的织构。

When Zircaloy-4 plate is rolled at high a tempera-ture , { 10 ` 11 } ` 2113 and { 11 ` 21 } ` 2113 slips are the basic deformation systems , thus the operations of them make basal pole orientate along the normal direction of plate .

共基极放大器频率响应的研究

A Study of the Frequency Response of the Common Base Amplifier