氢化锗

氢化锗在电热石英管中的行为

The Behavior of GeH_4 in an Electrically Heated Quartz Tube

等离子体淀积氢化纳米锗的阳极氢覆盖率的影响（英文）本文介绍了低温等离子体淀积氢化氮化硅工艺技术和解释了该特性，这些特性包括结构（SiH，NH和SiN）；

ROLE OF HYDROGEN SURFACE COVERAGE AT ANODE IN PLASMA DEPOSITION OF nc-Ge : H The techniques and the interpretations of the Properties of low temperatures plasma deposition of hydrogenated silicon nitride are discussed .

用这种方法，我们得到了锗含量从5%到95%的分布均匀的氢化非晶硅锗合金，膜质均匀、致密，是制造太阳能电池、锗化锗晶体管的优良材料。

Using this method , We obtained distribution uniform , dense-in-itself structure , amorphous hydrogenated silicon - germanium alloy films . Ge content can be controlled from 5 % to 95 % Itis promising material for passivation of Ge transistor as well as amorphous solar cells .