暗电流

平均暗电流常利用调零电路消除。

The average dark current is often eliminated by means of a zeroing circuit .

在P型样品中，反型层量子化效应强烈地影响少子暗电流的大小。

The inversion layer quantization effect strongly modulates the value of dark current in P-type Hg_ ( 1-x ) Cd_xTe .

降低Si基有机光电探测器暗电流的研究

Study on the Reduction of the Dark Current in Si-based Organic Photodetector

线阵CCD暗电流和灵敏度实时校正

Real-Time Correction for Linear Array CCD Dark Current and Response

测量了该紫外探测器的暗电流曲线、CV特性曲线、光响应曲线和响应时间曲线。

Its dark current , C-V , responsivity , and response time are measured at room temperature .

CCD像元间暗电流和响应不一致性的矫正方法

The Dispersion of Dark Current and Responsivity of Individual CCD Pixels and Its Rectification

高灵敏度低暗电流GaAs量子阱红外探测器

High Sensitivity Low Dark Current GaAs Quantum Well Infrared Photodetectors

利用半导体测试仪对芯片进行了测试，包括探测器的暗电流、响应度和结电容，并分析了深n阱、浅沟槽隔离等工艺步骤对探测器参数的影响。

Some critical parameters of these new structure photodetectors , such as dark current , responsivity , and junction capacitance , are measured and analyzed .

双异质结扩展波长InGaAsPIN光电探测器暗电流研究InGaAs短波红外探测器的偏振响应特性分析

Dark Current Characteristics of Double Heterojunction Wavelength Extended InGaAs PIN Photodetectors

同时也介绍了用LED光源测得的单光电子幅度谱及用热发射法测得的暗电流谱的差异，并分析了两种方法测得的幅度谱的差异的主要根源。

At the same time we studied the difference for use LED low intensity light source and dark current method , mea sured photoelectron spectrum .

复合电流是液相外延GaAs太阳电池暗电流的主要成分。

The recombination current is the main part of the dark current of LPE GaAs solar cells .

具有高量子效率、低暗电流、高可靠性的平面InGaAsPIN光电二极管

Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability

InGaAsPIN光电探测器的暗电流特性研究

The Dark Current Characteristics of InGaAs PIN Photodetectors

从理论上分析了像素响应不均匀性对CCD亚像素细分的影响，以及CCD暗电流和光电响应不均匀性产生的原因。

The influence of non-uniformity for sub-pixel determination , the cause for CCD dark current and photoelectric response are theoretically analyzed .

快速MCP型光电倍增管中暗电流的分析与研究

Analysis and Research of Dark Current in High Speed MCP PMT

最后运用实例说明了通过此方法，大大地降低了CCD的暗电流，提高了其探测灵敏度。

The practical examples finally demonstrate that dark current is greatly reduce and the detection sensitivity is improved by means of this method .

垂直p-n结的碲镉汞光伏探测器暗电流特性分析

Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction

PSD在应用过程中的关键问题是背景杂散光及暗电流的干扰影响。

The key problem of using PSD is to overcome the disturbance influence of background light and dark currents .

为了改进（Al）GaN基紫外探测器的性能，非常关键的是如何降低器件的暗电流以及提高器件的热稳定性。

To improve the performance of ( Al ) GaN UV PDs , it is important to achieve low dark current and high thermal stability .

基于二极管品质因子和暗电流研究的MPPT算法

A MPPT algorithm based on the research of diode factor and reverse saturation current

脉冲LD测距系统的噪声主要包括热噪声、散粒噪声、背景噪声、暗电流噪声及放大器噪声。

Such noises include thermal noise , particle noise , background noise , dark current noise as well as amplifier noises .

研制了CCD不均匀性校正系统，实现了通常校正中忽略的暗电流不均匀性的实时校正。

A correction system for CCD nonuniformity is developed . The real time correction of dark current nonuniformity , which was usually neglected , is realized .

光门型CMOS图像传感器作为CMOS图像传感器三种主流像素结构之一，以其结构简单、暗电流较低等优点受到广泛关注。

Among them , photo-gate CMOS image senor has the advantages of simple structure and low dark current , and has attracted extensive attention .

阐述了影响CCD探测灵敏度的暗电流及暗电流噪声的产生机理，分析了其对CCD性能的影响。

The dark current that affects CCD detection sensitivity is described . The generating mechanism of dark current noise and its influence on CCD performance are analyzed .

结果表明，γ辐照使光敏器件的光电流Ip、电流放大倍数β和光电响应时间t减小，暗电流Id增加，结电容C基本不变。

The experimental results showed that the light current Ip , current amplification factor β and response time to photo - devices were all decreased while dark current Id increased and junction capacitance C unchanged basically .

暗电流对EBS摄象管弱信号性能的影响

Effects of Dark Current on Low Signal Level Performance of EBS Camera Tube

低暗电流InGaAs金属－半导体－金属光电探测器

InGaAs MSM-PD with low dark current

经测试，本系统稳定高效的实现了既定目标，实现了CMOS图像传感器的数据压缩与去暗电流成像效果。

The system is stable and efficient to achieve the stated objectives and finish the CMOS image sensor data compression and the removing of dark current .

MCP带膜后电子增益下降，体电阻增加，暗电流降低，探测效率下降。

The volume resistance increase , the electron gain , dark current and detection efficiency decreases for MCP with film .

详细介绍了CCD的增益、转移效率、满阱、线性、暗电流、读出噪声、陷阱和量子效率的测试方法及测试结果。

Testing method and results of such parameters as gain , CTE , full well , linearity , dark current , readout noise , trap and QE are described in detail .