晶格失配

其目的是为了缓冲由GaN外延层和Si衬底的晶格失配造成的应力。

The lattice mismatch between substrates and epitaxy layer affects the films ' quality .

通过射频反应溅射法在硅衬底上制备了具有c轴择优取向和小晶格失配的In掺杂ZnO薄膜。

Indium-doped zinc oxide films with c-axis preferred orientation and small lattice mismatch are deposited on silicon substrates by RF co-reactive sputtering .

实验结果表明在不同衬底上生长的ZnO薄膜，由于晶格失配度不同，其衍射峰也有区别。

There are some shifts of diffraction peaks for ZnO thin film at different substrates .

由于受晶格失配和热失配等因素影响，GaN受到张应力。

Owing to the lattice mismatch and thermal mismatch , the GaN epitaxial suffer tensile stress .

异质外延所产生的热膨胀系数差别和晶格失配会大大降低GaN薄膜质量。

Thermal expansion coefficient difference and lattice mismatch caused by heteroepitaxial would significantly reduce the quality of GaN films .

YIG薄膜光波导晶格失配引起的模式转换

Mode Conversion Arising from Lattice Mismatching in YIG Thin Film Waveguides

从理论上计算出GaAs/Si异质结在Si的（211）面上界面态密度最小，故GaAs在Si（211）面上生长晶格失配度较小。

The paper in the theory have been calculated GaAs / Si heterostructures epitaxy on ( 211 ) Si crystal plane , which density is smaller than other .

而InSb型界面缓解晶格失配主要机制是产生失配位错。

The misfit dislocations in InSb-like interface are the primary mechanism for accommodating the lattice mismatch .

由于GaN衬底和GaAs外延层二者之间较大的晶格失配，导致GaAs外延膜生长方式为三维岛状生长。

The large lattice mismatch between the GaN substrate and the GaAs epitaxial , resulting in the growth of GaAs epitaxial films for three-dimensional island growth .

MBEInxGa（1-x）As/GaAs（001）系统晶格失配的研究

Investigation on Lattice Mismatch of MBE In_xGa_ ( 1-x ) As / GaAs ( 001 ) System

实验发现在Si（111）衬底上很难得到理想质量的MgO薄膜，这可能是由于（111）取向的Si衬底与立方结构的MgO材料具有较大的晶格失配的原因。

Ideal quality MgO thin films can 't be achieved on Si ( 111 ), that may be because there is big crystal lattice mismatch between Si ( 111 ) and MgO .

同时由于TiN和ZrN的晶格失配度高达7%，因此TiN／ZrN多层膜中TiN与ZrN之间的界面很难形成很好的外延关系，而是存在一定的界面混合层。

Considering tke mismatch between TiN and ZrN lattices to be about 7 % , a mixed interface layer was found in TiN / ZrN multilayers .

同时，较大的晶格失配也是导致GaAs外延膜拉曼散射TO声子和LO声子发生较大拉曼频移的主要原因。

At the same time , the large lattice mismatch is the main reason for the large frequency shift in Raman scattering of TO-phonon and the LO phonon GaAs epitaxial .

Si基GaN光电子器件虽然在实现器件集成方面具有优势，但两种材料间较大的晶格失配和热失配严重阻碍了其技术应用进程。

Si based GaN optoelectronic devices were specially advantageous in realizing integration in devices , however , the large lattice mismatch and thermal mismatch between GaN and Si had seriously hindered their developments and applications .

在Si的金刚石结构上异质外延纤锌矿结构的AlN，尽管理论上是可行的，但是存在着晶格失配、热失配和反相畴等一系列难题。

The heteroepitaxy of wurtzite AlN on the diamond structure of Si is theoretically feasible , however , some problems such as lattice mismatch , thermal mismatch and antiphase domain exist in the practice .

由于与GaN晶格失配小（约1.4%），γLiAlO2单晶有望成为一种很有希望的GaN外延衬底材料。

γ - LiAlO_2 single crystals were anticipated to act as a promising substrate material for the epitaxy of GaN because of the little lattice misfit ( about 1.4 % ) between each other .

保温过程由于C从TiC向Al熔体中的扩散，使其稳定性降低及TiC向Al4C3转化，使αAl晶格失配是细化效果衰减的主要原因。

The refinement effect fading is resulted from the diffusion of C from TiC to liquid Al leading to the decrease of stability and the transformation of TiC to Al_4C_3 to result in the mismatch of α - Al lattice .

GaN衬底和GaAs外延层二者之间较大的晶格失配，导致GaAs外延层缺陷密度很高，非辐射复合增强是造成GaAs光致发光强度低的原因。

The large lattice mismatch between the GaAs substrate and the GaN epitaxial layer , resulting in high-density defects in GaAs epitaxial layer and enhanced non-radioactive , is the reason of low photoluminescence intensity of GaAs .

为了释放因晶格失配产生的应力，以降低在GaN外延膜中引起的缺陷密度，我们对蓝宝石衬底采用了氢等离子体清洗、氮等离子体氮化以及低温生长缓冲层的方法。

In order to release the stresses originated from the lattice mismatch and reduce the defect densities , sapphire substrate surfaces are preprocessed by H-plasma cleaning , N-plasma nitriding and the low temperature buffer growth .

人们对ZnO的热衷还因为，它和GaN具有相同的纤维锌矿结构，在[0001]方向的晶格失配率小于1.8%，有望成为高质量GaN外延材料的理想衬底。

In addition , for having the same wurtzite structure as GaN with a lattice mismatch less than 1.8 % in [ 0001 ] direction , ZnO is a promising ideal substrate for high-quality GaN epitaxial material .

由于金刚石与Si有较大的晶格失配度和表面能差，利用化学气相沉积（CVD）制备金刚石膜时，金刚石在镜面光滑的Si表面上成核率非常低。

Due to large lattice mismatch and surface energy difference between diamond and silicon , there is a very low diamond nucleus density on a mirror-polished silicon surface when diamond films are synthesized by chemical vapor deposition ( CVD ) system .

YBiIG、YbIG系列石榴石薄膜的生长、测试结果表明，晶格失配度对LPE外延成功与否起重要作用。

It was found that the mismatch of crystal lattice played an important role in the process of LPE .

本论文主要对InxGa（1-x）N/GaN量子阱中的三阶非线性极化率进行了研究，并探讨了由于晶格失配造成的内建压变电场对量子阱中光学非线性极化率的影响。

The study focused on the third-order nonlinear susceptibilities x ~ ( 3 ) in In_xGa_1-xN / GaN quantum well , and also included the influence of built-in piezoelectric on the nonlinear susceptibilities .

作为尝试，引入MgAl2O4薄膜作为缓冲层，形成SBN/MgAl2O4/Si结构，这种结构与MgO缓冲层结构相比，可以解决晶格失配的问题，更有利于SBN薄膜择优取向生长。

MgAl_2O_4 thin film was used as a buffer layer in SBN / MgAl_2O_4 / Si structure as a try . Compared with SBN / MgO / Si structure , MgAl_2O_4 thin film can overcome the problem of crystal mismatch .

负的应变是由于ZnO与衬底的晶格失配和热失配，而逐渐变为正值是Zn0·9Mg0·1O与ZnO的晶格常数差异及弹性应变的逐渐释放所致。

The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch between ZnO and sapphire substrate , and the positive distortion is due to the tensile strain in the parallel direction of Zn_0.9 Mg_0.1 O and the gradual release of the strain .

但是在这种外延关系下BFO与GaN的晶格失配较大，BFO薄膜以岛状模式生长，生长的BFO薄膜为多晶薄膜，并具有大量的缺陷，表现出较差的电学性能。

However , due to the large lattice mismatch of BFO and GaN in the relationship , BFO films grown in island mode . So , the BFO films were polycrystalline and had a large number of defects , showing poor electrical properties .

晶格失配应变对铁电薄膜铁电性能的影响

Effects of lattice-misfit strain on the ferroelectric properties of ferroelectric films

参数失配度对混沌同步的影响半导体外延层晶格失配度的计算

Calculation of the Lattice Mismatch Between Semiconductor Epitaxy and Substrate

压应力主要来源于晶格失配和热失配。

This compressive stress is derived from the lattice and thermal mismatch .

磁性石榴石膜的生长和晶格失配

Growth and Lattice Mismatch of Magnetic Garnet Films