光伏探测器
- 网络Photovoltaic detector;photodiode
-
报道了一种适用于碲镉汞长波光伏探测器的由典型电阻电压(R-V)曲线提取器件基本特征参数的数据处理途径。
An data-processing method was developed to obtain the device parameters from the resistance-voltage ( R-V ) characteristics measured in long-wavelength HgCdTe photodiode .
-
不同结构的碲镉汞长波光伏探测器的暗电流研究
Study of dark current for mercury cadmium telluride long-wavelength photodiode detector with different structures
-
N-On-PHg(0.8)Cd(0.2)Te光伏探测器参量的选择
Selection of parameters of n-on-p hg_ ( 0.8 ) cd_ ( 0.2 ) te PV detectors
-
Hg(1-x)CdxTe长波光伏探测器的低频噪声研究
Low-frequency noise of hg_ ( 1-x ) cd_xte long-wave photovoltaic detector
-
Hg(1-x)CdxTe光伏探测器的钝化研究
Study on the passivation of hg_ ( 1-x ) cd_xte photovoltaic detectors
-
Hg(0.8)Cd(0.2)Te光伏探测器光敏面均匀性的研究
Study on homogeneity of photosensitive surface of Hg_ ( 0.8 ) Cd_ ( 0.2 ) Te photovoltaic detector
-
以兰宝石为衬底的Hg(1-x)CdxTe高优质红外光伏探测器
High performance photovoltaic infrared devices in Hg_ ( 1-x ) Cd_xTe on sapphire
-
Sb~+离子注入Pb(0.97)Hg(0.03)Te光伏探测器
Photovoltaic detectors in Pb_ ( 0.07 ) Hg_ ( 0.03 ) Te produced by Sb ~ + ion implantation
-
Hg(1-x)CdxTe光伏探测器的表面漏电流机制及其钝化
Surface Leakage Current Mechanism and Passivation of Hg_ ( 1-x ) Cd_xTe Photovoltaic Detectors
-
气态源分子束外延8元In(0.53)Ga(0.47)As/InP光伏探测器阵列
8-element In_ ( 0.53 ) Ga_ ( 0.47 ) As / InP Photovoltaic Detector Array Grown by Gas Source Molecular Beam Epitaxy
-
垂直p-n结的碲镉汞光伏探测器暗电流特性分析
Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction
-
1MeV电子辐照对短波Hg(1-x)CdxTe光伏探测器的影响
Influence of 1 MeV electron irradiation on HgCdTe photovoltaic detectors
-
提出了临界输入阻抗的概念,实验表明,当电路的输入阻抗低于此临界值时(对于GaNp!i!n光伏探测器来说约为106Ω),焦平面才能获得较高的注入效率。
The concept of the critical input resistance was put forward in this paper . Experiment indicates that the FPA will gain high injection efficiency only when the input resistance is lower than the critical value ( 106 Ω for GaN p-i-n detector ) .
-
参数对理想光伏探测器光生电动势的影响
Influence of Parameters on Photo-electromotive Force of A Reduced Photovoltaic Detector
-
γ辐射对碲镉汞光伏探测器的暂态损伤与永久损伤
Transient and permanent defects of HgCdTe photovoltaic detectors by γ irradiation
-
激光对光伏探测器真空破坏的实验研究
Experimental study about laser induced damage to photovoltaic detectors in vacuum
-
短波红外InGaAs/InP光伏探测器系列的研制
Fabrication of short wavelength infrared ingaas / inp photovoltaic detector series
-
红外光伏探测器的1/f噪声谱测试
1 / f Noise Spectra Measurement of IR Photovoltaic Detectors
-
用于10微米波长的碲锡铅光伏探测器
Lead - tin - telluride 10 micron photovoltaic detectors
-
硅光伏探测器放大电路设计
The Design of Amplification Circuit of Silicon Photodetector
-
锑化铟光伏探测器的热噪声限工作
Johnson noise limited operation of photovoltaic InSb detectors
-
硅紫外增强光伏探测器件中的异常光电特性
Abnormal Photoelectric Characteristics of Si Ultraviolet Photovoltaic Detector
-
硅紫外光伏探测器件响应度的研究
Study on responsivity of UV Si photovoltaic detectors
-
结空间电荷区和偏压对红外光伏探测器Dλ~的影响
Effects of the space charge layer and the bias voltage on d_ λ ~ of infrared photovoltaic detectors
-
介绍了沥清-苯溶液浓度智能检测仪中硅光伏探测器放大电路的设计方法,并指出在设计这类电路时所应注意的问题。
This paper presents the design method of silicon photodetector amplification circuit in bitumen benzene solution density intelligent measurer , and points out some problems that should be considered when this kind of circuits is designed .
-
后表面对P-N结光伏红外探测器性能的影响(Ⅱ)Hg(1-x)CdxTe器件的数值分析
The Effects of the Back Surface on the Performance of the P-N Junction Infrared Photovoltaic Detectors
-
皮秒脉冲激光照射下碲镉汞光伏红外探测器的负光伏响应新现象
Negative photovoltaic-responses in HgCdTe infrared photovoltaic detectors irradiated with picosecond pulsed laser
-
强激光与光伏型探测器的相互作用
Interaction between High Power Laser and Photovoltaic Detectors
-
实验分析比较了不同环境下的破坏面积异同及其对光伏型探测器的影响。
The difference of the damage area and their influence on the photovoltaic detector are compared experimentally in both environments .
-
红外探测器部分主要讲红外探测器的概念、光电效应、光子探测器中的光电导探测器和光伏型探测器。
In the section of infrared detector , the concept of infrared detector , photoelectric effect , photoconductive detector and photovoltaic detector are mainly described .