铁电材料

铁电材料激光刻蚀系统中的PID微机控制技术

PID Control Technology in the Laser Etching System for Ferroelectric Materials

本文简要介绍了铁电材料及其在MEMS器件方面的应用情况。

In this paper , the ferroelectric materials and their applications in the MEMS devices are introduced .

无铅铁电材料-BaTi2O5的研究进展

Research Progress of Lead-free Ferroelectric BaTi_2O_5

所以，开发一类新的铁电材料来取代PZT变得尤为必要。

A new kind of ferroelectric material needs to be found to replace PZT .

铁电材料锆钛酸铅（PZT）的合成及性能研究

Preparation and Studies of Ferroelectric Material PZT

其还是一种互溶性较好的钙钛矿铁电材料，其居里点温度Tc可较容易地调至室温附近，介电温度系数较大，是一种非常适用于电场调节元件的材料。

Because of the expedient modulation of curie temperature Tc to room temperature , the larger dielectric-temperature coefficients , PST materials are favorable to be used in microwave tunable devices .

铁电材料Bi4Ti3O（12）及应用

Ferroelectric Material Bi_4Ti_3O_ ( 12 ) and its applications

电脉冲对调制下BST铁电材料对红外辐射的响应特性

Infrared Radiation Responsive Property of BST Ferroelectric Ceramic Modulated by the Electrical Couple-impulses

铁电材料I-V特性测试系统

Ferroelectric material ⅰ - ⅴ characteristic measurement system

目前，以PVDF及其共聚物P（VDF-TrFE）为代表的高分子有机铁电材料受到了人们的极大关注。

Organic ferroelectric materials PVDF and its copolymers P ( VDF-TrFE ) has draw a great attention recently .

而且，SBN在制备过程中能够避免PZT等铁电材料的铅污染的问题。

And the SBN thin film can avoid plumbum pollution of PZT ferroelectric material .

因此开发一类新的无铅铁电材料来取代PZT铁电薄膜是非常有必要。

Consequently , developing new type of free-lead ferroelectric materials to replace the PZT series is much of a necessity .

B位等价掺杂SrBi4Ti4O（15）铁电材料的性能研究

Effect of B-site equal-valent doping on ferroelectric properties of SrBi_4Ti_4O_ ( 15 ) ceramics

Bi含量对SrBi4Ti4O（15）铁电材料性能的影响

Effect of Bi content on the properties of srbi_4ti_4o_ ( 15 ) ferroelectric ceramics

PMN-PT弛豫型铁电材料的凝固组织与相结构

Solidified microstructure and phase structure of relaxor ferroelectrics PMN-PT

就研究体系而言，目前主要集中在钙钛矿相铁电材料，如钛酸锶钡（BST）及其掺杂系列。

As far as microwave tunable dielectric materials , Barium strontium titanate ( BST ) and its doped series have been investigated intensively .

因此对顺电态下的BST进行掺杂改性是近年来铁电材料的研究热点之一。

Investigations on the doping modification of BST in paraelectric state have been becoming one of the interesting research areas in the past few years .

作为这种技术在铁电材料研究中应用的例子，运用该变温系统在纳米尺度上原位地研究了铁电单晶TGS的相变特征。

As an example of its application in ferroelectric materials research , the phase transition of ferroelectric single crystal TGS was observed in-situ .

在越来越重视环境保护的时代，寻求新的无铅铁电材料来取代PZT变得尤为重要。

As people are paying more and more attention to the environment , it becomes very important to find a new kind of lead-free ferroelectric material with excellent ferroelectric property to replace PZT .

中温烧结（BaLa）（TiNb）O3基铁电材料的研究

Research on medium temperature sintering ( Bala ) ( tinb ) o_3 base ferroelectric materials

论文首先分析了国内外BST铁电材料移相器的研究和发展现状，总结了多种不同类型BST移相器的优缺点，并在此基础上决定选择分布电容共面波导结构式移相器进行研究。

Firstly , the thesis reviewed the study status on BST phase shifters and the achievements abroad , and decided to research the distributed phase shifters using optimized interdigitated capacitors .

锆钛酸钡（BZT）铁电材料研究进展

Latest progress on ferroelectric barium zirconate titanate

依据传统的铁电材料的P-E特性建模的方法，引入电压影响因子，得到了更为适合的P-V特性的新模型。

According to the traditional ferroelectric material P-E characteristics , introduces factors coming from voltage , more suitable P-V characteristics can be gained .

锆钛酸铅（PZT）系铁电材料具有一系列良好的性能，如较大的剩余极化值、较低的热处理温度等，是目前铁电存储器所用的主要材料。

At present , the materials used to prepare ferroelectric thin film memory are mainly PZT series because they have some favorable properties , such as large remnant polarization ( Pr ) value and low processing temperature .

层状Sr-Bi-Ti-O铁电材料的制备及其性能研究

Preparation and Properties of Layered Sr-Bi-Ti-O Ferroelectric Materials

基于Pao和Sah双积分且考虑了铁电材料的非饱和极化得到漏极电流的精确模拟，并给出了器件模拟结果。

In order to gain the accurate model of the drain current , the nonsaturated hysteresis of ferroelectric material and Pao and Sah ′ s integration is taken into account with the model results .

采用第一性原理全势线性缀加平面波方法计算了铁电材料PbTiO3（PTO）的顺电相、铁电相的电子结构。

The electronic band structures of both the ferroelectric and paraelectric of PbTiO_3 ( PTO ) are calculated by using an accurate full-potential linearized augmented plane-wave method .

SrBi2Ta2O9薄膜由于具有优异的抗疲劳特性，成为过去几年引人注目的铁电材料，但是其合成温度相对较高且剩余极化较低。

SrBi_2Ta_2O_9 films have been found to show a fatigue-free characteristic with simple metal electrodes , and attracted much attention in ferroelectric memory materials . But its annealing temperature is higher and it has lower remanent polarization .

适量的钒掺杂，大大增加了SrBi4Ti4O15（SBTi）铁电材料的剩余极化2Pr，并改善了材料的耐压性能。

Vanadium-doping with appropriate content enlarges the remnant polarization ( 2P_ r ) and enhances the electric breakdown voltage of SrBi_ 4 Ti_ 4 O_ 15 ( SBTi ) .

PLZT作为最具发展前景的铁电材料之一，在半导体工业、微存储器、热释电红外探测器、铁电场效应管、微机械等方面都有着重要的应用。

As one of the most promising ferroelectric materials , PLZT has important applications on varieties of fields including semiconductor industry , micro-memory , pyroelectric infrared detector , ferroelectric field effect transistor , micro-mechanical and etc. Ferroelectric property of PLZT is sensitive to the concentration of La .