金属化

金刚石颗粒表面Cr金属化及薄膜间界面扩散反应的研究

The Metallization and Interface Reaction Between Diamond Particle and Cr Layer

Al2O3的W金属化及其与Nb的Pd钎焊研究

Study on Tungsten Metallization of Al_2O_3 and Pd Brazing of It to Nb

Mg盐清净剂金属化工艺的纳米化学微反应机理

Nano-chemical micro-reaction mechanism of metalation process in synthesis of magnesium salt as lubricating oil detergent

介绍了原位一步自金属化制备银/聚酰亚胺（PI）纳米复合薄膜的方法。

The method to prepare silver / polyimide films was introduced .

陶瓷进行表面Cu金属化，并采用刮擦针焊的办法实现了陶瓷与Al的低温连接。

And , the metallized alumina was bonded to Al at low temperature using scrape-brazing process .

浅谈陶瓷金属化电镀Ni的质量控制

Quality Control of Ceramic Metalized Electroplate Ni

最后，对金属化前后的PET薄膜进行了XRD表征和SEM观察。

Finally , untreated and metallized PET films were analyzed by XRD and SEM respectively .

适合批量生产的GaAs数字IC背面金属化工艺

GaAs Digital IC Back Metallization Process for Mass Production

VLSI中的Al金属化系统

Al Metallization System for VLSI

PZT陶瓷表面金属化的研究&（Ⅳ）后处理的实施及其作用

Metallization of PZT ceramic surface ──(ⅳ) post-treatments and their effects on metallization

温度梯度对VLSI金属化布线电徙动特性的影响

Temperature Gradient Impact on Electromigration Characteristics in VLSI Metallization

谈FRP模具表面金属化工艺

Metalization process of the FRP mould surface

在AlN基片上采用Ag－20%Pd浆料实现了厚膜金属化布线。

The Ag 20 % Pd thick film metallization conductors on AlN substrate were studied .

AlN基板与金属化层界面的分析电镜研究

Analytical Electronic Microscope study of AlN Substrates and Metallization Interfaces

采用真空蒸发、溅射和化学镀铜的方法分别对研制的PTFE基复合介质进行了金属化处理。

PTFE based dielectric is metallized by vacuum vaporing , vacuum sputtering and chemical plating respectively .

AlN陶瓷厚膜金属化研究进展

Advances in Research of Thick Film Metallization for AlN

采用磁控溅射与真空蒸发工艺相对比的方法，分析了不同金属化薄膜及其结构对薄膜与PZT陶瓷的结合力和器件高频电学性能的影响。

By comparing sputtering method with vaporization , varied structure of metallization thin films was studied .

VLSI技术中的金属化工艺

Metallization Technologies in VLSI

AlN基片金属化Ag-Pd厚膜导体研究

Study of Ag Pd Thick Film Conductor for AlN Substrate Metallization

文章报道了最近对氢吸附导致-βSiC（001）-3×2表面金属化的研究结果。

We report our recent theoretical studies on the hydrogen-induced semiconductor surface metallization observed in β - SiC ( 001 ) - 3 × 2 surface .

分析过程中介绍了威布尔分布的金属化电容器寿命数据处理方法和威布尔分布参数点估计的GLUE方法。

The data processing method of metalized capacitor life expectancy and GLUE method of parameter point estimation of Weibull distribution are introduced in the course of analyzing .

在器件的金属化层及封装等结构中，高原子序数材料在低能X射线的辐照下，会在相邻的低原子序数材料中产生剂量增强效应，从而使得器件性能严重退化。

High atomic number material of device can produce dose-enhancement effects to next low atomic number material in metallized layer and encapsulation structures irradiated with low-energy X ray . So device performance degenerates badly .

这一用于PTC金属化的膜系结构及其制备方法在国际上尚属首次，已经申请了国家发明专利，专利申请号为201110322220.2。

This film structure applied in PTC metallization is of the first time and a national patent has been applied on it . 4 .

陶瓷表面Ni-Cu-P金属化工艺的研究

Study of Ni-Cu-P Metallizing Process on Ceramic Surface

使SiC表面金属化并在镀液中加入复合表面活性剂，运用化学复合镀方法制备了NiP/SiC镀层。

Surfaces of SiC particles are metalized and an ionic and nonionic combined surfactant is employed in the electroless solution to obtain Ni P / SiC composite plating by the method of electroless deposit .

与人们所熟悉的其他多层电路一样，多层微波电路实际上是平面微波电路的一种折叠结构形式，层与层之间以金属化的小孔（via）实现微波或直流电路的垂直互连。

The same as other familiar multi-layer circuit , multilayered microwave circuit is actually a folded structure of plane microwave circuit . Between the layers , it uses the metallic via to propagate the microwave or DC signal in vertical direction .

本文采用电子扫描电镜（SEM）及X射线能谱（EDX）分析了Au丝与Al金属化层焊盘键合后在老化过程中界面处元素的分布规律以及化合物的演变过程。

The ultrasonic bonds , after bonding and aging , of Au wire bonded on the Al metallization pad were analyzed by Scanning Electronic Microscopy ( SEM ) with Energy Dispersive X-Ray Spectrometer ( EDX ) .

胶体钯是化学镀行业，尤其是PCB孔金属化中应用最广泛的催化剂。但是，有关盐基胶体钯制备工艺国内外少见报道。

The colloid palladium is used broadly in electroless industry , especially in the hole metallization of PCB . However , the report about preparing salt-based colloid palladium is less in the domestic and overseas .

电镀铜是PCB加工过程中的一个关键工艺流程，涉及到孔和板面金属化的性能保证，影响因素众多。

The plating copper is a key process in the production of PCB , which involves the quality assurance of metallization of PTH holes and laminate surface , and is affected by a number of factors .

随着VLSI集成度的提高，金属化互连线的几何尺寸亦不断缩小，电迁移成为更为严重的可靠性问题，电迁移评估技术也越来越多。

As the VLSI integration level advanced , metal interconnect is narrowing , so the electro migration has been a serious reliability issue , meanwhile more and more the electro migration evaluation technology appeared .